US 7,361,406 B2 | ||
Ultra-high current density thin-film Si diode | ||
Qi Wang, 8552 S. Miller Ct., Littleton, Colo. 80127 (US) | ||
Assigned to Qi Wang, Littleton, Colo. (US) | ||
Appl. No. 10/488,902 PCT Filed Apr. 29, 2003, PCT No. PCT/US03/14386 § 371(c)(1), (2), (4) Date Mar. 04, 2004, PCT Pub. No. WO2004/100272, PCT Pub. Date Nov. 18, 2004. |
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Prior Publication US 2005/0129933 A1, Jun. 16, 2005 | ||
Int. Cl. B32B 9/00 (2006.01); B32B 17/06 (2006.01); B32B 9/04 (2006.01); C23C 8/00 (2006.01); H01L 31/00 (2006.01) |
U.S. Cl. 428—446 [257/656; 428/336; 428/428; 428/448; 427/585] | 28 Claims |
1. A thin film diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, said structure containing a combination wherein a buffer layer of an a-Si:H is interfaced between an i-layer of μc-Si and
a p-layer of μc-Si, said thin film diode comprising:
a) a substrate;
b) a bottom metal layer disposed on said substrate;
c) an n-layer of μc-Si deposited on said bottom metal layer;
d) an i-layer of μc-Si deposited on said n layer;
e) a buffer layer of a-Si:H deposited on said i layer;
f) a p-layer of μc-Si deposited on said buffer layer; and
g) a top metal layer deposited on said p layer.
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