US 7,396,408 B2
Monocrystalline diamond layer and method for the production thereof
Matthias Schreck, Augsburg (Germany); Stefan Gsell, Augsburg (Germany); and Bernd Stritzker, Kissing (Germany)
Assigned to Universität Augsburg, Augsburg (Germany)
Appl. No. 10/555,330
PCT Filed May 03, 2004, PCT No. PCT/EP2004/004678
§ 371(c)(1), (2), (4) Date Dec. 14, 2006,
PCT Pub. No. WO2004/100238, PCT Pub. Date Nov. 18, 2004.
Claims priority of application No. 103 20 133 (DE), filed on May 06, 2003.
Prior Publication US 2007/0084398 A1, Apr. 19, 2007
Int. Cl. C30B 25/12 (2006.01); C30B 25/14 (2006.01)
U.S. Cl. 117—68  [117/75] 19 Claims
OG exemplary drawing
 
1. Diamond film arranged on a body containing a substrate containing at least one of silicon and silicon carbide, at least one buffer film and at least one metal film made of iridium, whereby the diamond film is deposited on the at least one metal film.