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DOI 10.1063/1.100223
Title Non-Newtonian strain relaxation in highly strained SiGe heterostructures
Creator/Author Dodson, B.W. ; Tsao, J.Y.
Publication Date1988 Dec 19
OSTI IdentifierOSTI ID: 6626864
Other Number(s)Journal ID: CODEN: APPLA
Resource TypeJournal Article
Resource RelationJournal Name: Appl. Phys. Lett.; (United States); Journal Volume: 53:25
Research OrgSandia National Laboratories, Albuquerque, New Mexico 87185-5800
Subject36 MATERIALS SCIENCE; GERMANIUM; HETEROJUNCTIONS; STRAINS; STRESS RELAXATION; GERMANIUM SILICIDES; DESIGN; EXPERIMENTAL DATA; FABRICATION; INTERFACES; LAYERS; PLASTICITY; SUPERLATTICES; VERY HIGH PRESSURE; DATA; ELEMENTS; GERMANIUM COMPOUNDS; INFORMATION; JUNCTIONS; MECHANICAL PROPERTIES; METALS; NUMERICAL DATA; RELAXATION; SEMICONDUCTOR JUNCTIONS; SILICIDES; SILICON COMPOUNDS
Description/Abstract
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: Pages: 2498-2500
System Entry Date2008 Aug 14

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