Bibliographic Citation
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DOI | 10.1063/1.100223 |
Title | Non-Newtonian strain relaxation in highly strained SiGe heterostructures |
Creator/Author | Dodson, B.W. ; Tsao, J.Y. |
Publication Date | 1988 Dec 19 |
OSTI Identifier | OSTI ID: 6626864 |
Other Number(s) | Journal ID: CODEN: APPLA |
Resource Type | Journal Article |
Resource Relation | Journal Name: Appl. Phys. Lett.; (United States); Journal Volume: 53:25 |
Research Org | Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 |
Subject | 36 MATERIALS SCIENCE; GERMANIUM; HETEROJUNCTIONS; STRAINS; STRESS RELAXATION; GERMANIUM SILICIDES; DESIGN; EXPERIMENTAL DATA; FABRICATION; INTERFACES; LAYERS; PLASTICITY; SUPERLATTICES; VERY HIGH PRESSURE; DATA; ELEMENTS; GERMANIUM COMPOUNDS; INFORMATION; JUNCTIONS; MECHANICAL PROPERTIES; METALS; NUMERICAL DATA; RELAXATION; SEMICONDUCTOR JUNCTIONS; SILICIDES; SILICON COMPOUNDS |
Description/Abstract | |
Country of Publication | United States |
Language | English |
Format | Medium: X; Size: Pages: 2498-2500 |
System Entry Date | 2008 Aug 14 |
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