| US 7,397,830 B2 | ||
| Semiconductor laser device | ||
| Kenzo Ishibashi, Osaka (Japan); Katsumi Gotoh, Osaka (Japan); Takatoshi Yukimasa, Osaka (Japan); and Makoto Ichinose, Osaka (Japan) | ||
| Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan) | ||
| Appl. No. 10/555,940 PCT Filed Feb. 20, 2004, PCT No. PCT/JP2004/002035 § 371(c)(1), (2), (4) Date Mar. 08, 2006, PCT Pub. No. WO2004/100168, PCT Pub. Date Nov. 18, 2004. |
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| Prior Publication US 2006/0285475 A1, Dec. 21, 2006 | ||
| Int. Cl. H01S 3/04 (2006.01) | ||
| U.S. Cl. 372—34 [372/36] | 17 Claims |
| 1. A semiconductor laser device comprising:
a mechanism section including a semiconductor laser;
a first frame for holding the mechanism section and radiating heat generated in the mechanism section;
a control section for controlling the mechanism section;
a second frame for holding the control section and radiating heat generated in the control section; and
a coupling section having a low thermal conductivity, for insulatively coupling the first frame to the second frame.
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