| US 7,396,563 B2 | ||
| Ceramic thin film on various substrates, and process for producing same | ||
| Mihai Scarlete, Roxboro (Canada); and Cetin Aktik, Sherbrooke (Canada) | ||
| Assigned to Sixtron Advanced Materials, Inc., Quebec (Canada) | ||
| Appl. No. 10/515,450 PCT Filed May 23, 2003, PCT No. PCT/CA03/00763 § 371(c)(1), (2), (4) Date Jun. 24, 2005, PCT Pub. No. WO03/100123, PCT Pub. Date Dec. 04, 2003. |
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| Claims priority of application No. 2387274 (CA), filed on May 23, 2002. | ||
| Prior Publication US 2005/0241567 A1, Nov. 03, 2005 | ||
| Int. Cl. C23C 16/00 (2006.01); C23C 16/22 (2006.01) | ||
| U.S. Cl. 427—248.1 [427/255.23; 427/255.28; 427/255.38; 427/255.394] | 17 Claims |
| 1. A method of depositing a thin ceramic film onto a substrate comprising:
providing a polymeric source selected from the group consisting of a boron nitride polymer, a carbon nitride polymer, a polysilane,
a polycarbosilane, a polycarbosilazane or a polysiloxazane, the polymeric source comprising chains,
volatilizing the polymeric source in a heating zone;
providing the substrate in a deposition zone;
heating the polymeric source under a gaseous atmosphere having a pressure and a flowrate in a pyrolysis zone, whereby pyrolyzing
the polymeric source to produce a gaseous precursor at a first temperature comprising said chains of the polymeric source;
positioning the substrate in the deposition zone to receive the gaseous precursors carried by the gaseous atmosphere; and
cooling the substrate at a second temperature in the deposition zone below the first temperature whereby desublimating the
gaseous precursor onto the substrate, the precursor chemically rearranging and annealing to produce the film on the substrate,
the film having properties that include an amorphous nature, a crystallinity and a degree of reticulation.
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