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DOI http://dx.doi.org/10.1063/1.371842
Title Influence of indium composition on the surface morphology of self-organized In{sub x}Ga{sub 1-x}As quantum dots on GaAs substrates
Creator/Author Li, Hanxuan [Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina 27708-0291 (United States)] ; Zhuang, Qiandong [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China (China)] ; Wang, Zhanguo [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China (China)] ; Daniels-Race, Theda [Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina 27708-0291 (United States)]
Publication Date2000 Jan 01
OSTI IdentifierOSTI ID: 20217773
Other Number(s)Journal ID: ISSN 0021-8979; JAPIAU; TRN: US00Z2839
Resource TypeJournal Article
Resource RelationJournal Name: Journal of Applied Physics; Journal Volume: 87; Journal Issue: 1; Other Information: PBD: 1 Jan 2000
Subject36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; SEMICONDUCTOR JUNCTIONS; MOLECULAR BEAM EPITAXY; CHEMICAL COMPOSITION; COALESCENCE; STRUCTURAL CHEMICAL ANALYSIS; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; EXPERIMENTAL DATA
Description/Abstract
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: page(s) 188-191
System Entry Date2008 Feb 08

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