Bibliographic Citation
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DOI | http://dx.doi.org/10.1063/1.371842 |
Title | Influence of indium composition on the surface morphology of self-organized In{sub x}Ga{sub 1-x}As quantum dots on GaAs substrates |
Creator/Author | Li, Hanxuan [Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina 27708-0291 (United States)] ; Zhuang, Qiandong [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China (China)] ; Wang, Zhanguo [Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China (China)] ; Daniels-Race, Theda [Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina 27708-0291 (United States)] |
Publication Date | 2000 Jan 01 |
OSTI Identifier | OSTI ID: 20217773 |
Other Number(s) | Journal ID: ISSN 0021-8979; JAPIAU; TRN: US00Z2839 |
Resource Type | Journal Article |
Resource Relation | Journal Name: Journal of Applied Physics; Journal Volume: 87; Journal Issue: 1; Other Information: PBD: 1 Jan 2000 |
Subject | 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; SEMICONDUCTOR JUNCTIONS; MOLECULAR BEAM EPITAXY; CHEMICAL COMPOSITION; COALESCENCE; STRUCTURAL CHEMICAL ANALYSIS; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; EXPERIMENTAL DATA |
Description/Abstract | |
Country of Publication | United States |
Language | English |
Format | Medium: X; Size: page(s) 188-191 |
System Entry Date | 2008 Feb 08 |
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