Bibliographic Citation
Document | For copies of Journal Articles, please contact the Publisher or your local public or university library and refer to the information in the Resource Relation field. For copies of other documents, please see the Availability, Publisher, Research Organization, Resource Relation and/or Author (affiliation information) fields and/or Document Availability. |
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DOI | http://dx.doi.org/10.1063/1.117071 |
Title | Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures |
Creator/Author | Marcinkevicius, S. [Department of Physics II, Royal Institute of Technology, 10044 Stockholm (Sweden)] ; Hillmer, H. ; Loesch, R. [Deutsche Telekom, Technologiezentrum, P. O. Box 100003, D-64276 Darmstadt (Germany)] ; Olin, U. [Institute of Optical Research, 10044 Stockholm (Sweden)] |
Publication Date | 1996 Aug 01 |
OSTI Identifier | OSTI ID: 286527 |
Other Number(s) | Journal ID: APPLAB; ISSN 0003-6951; TRN: TRN: 9615M0196 |
Resource Type | Journal Article |
Resource Relation | Journal Name: Applied Physics Letters; Journal Volume: 69; Journal Issue: 8; Other Information: PBD: Aug 1996 |
Subject | 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; CHARGE CARRIERS; TRANSPORT THEORY; HETEROJUNCTIONS; PHOTOLUMINESCENCE; TIME RESOLUTION; NEAR INFRARED RADIATION; ELECTRON CAPTURE; GALLIUM ARSENIDES; CHARGE TRANSPORT; INDIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM PHOSPHIDES |
Related Subject | QUANTUM WELLS;PS RANGE |
Description/Abstract | |
Country of Publication | United States |
Language | English |
Format | Medium: X; Size: pp. 1101-1103 |
System Entry Date | 2008 Feb 04 |
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