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DOI http://dx.doi.org/10.1063/1.117071
Title Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures
Creator/Author Marcinkevicius, S. [Department of Physics II, Royal Institute of Technology, 10044 Stockholm (Sweden)] ; Hillmer, H. ; Loesch, R. [Deutsche Telekom, Technologiezentrum, P. O. Box 100003, D-64276 Darmstadt (Germany)] ; Olin, U. [Institute of Optical Research, 10044 Stockholm (Sweden)]
Publication Date1996 Aug 01
OSTI IdentifierOSTI ID: 286527
Other Number(s)Journal ID: APPLAB; ISSN 0003-6951; TRN: TRN: 9615M0196
Resource TypeJournal Article
Resource RelationJournal Name: Applied Physics Letters; Journal Volume: 69; Journal Issue: 8; Other Information: PBD: Aug 1996
Subject42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; CHARGE CARRIERS; TRANSPORT THEORY; HETEROJUNCTIONS; PHOTOLUMINESCENCE; TIME RESOLUTION; NEAR INFRARED RADIATION; ELECTRON CAPTURE; GALLIUM ARSENIDES; CHARGE TRANSPORT; INDIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM PHOSPHIDES
Related SubjectQUANTUM WELLS;PS RANGE
Description/Abstract
Country of PublicationUnited States
LanguageEnglish
FormatMedium: X; Size: pp. 1101-1103
System Entry Date2008 Feb 04

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