| US 7,459,983 B2 | ||
| Temperature detecting semiconductor device | ||
| Takayuki Gyoten, Tokyo (Japan); Fukashi Morishita, Tokyo (Japan); and Katsumi Dosaka, Tokyo (Japan) | ||
| Assigned to Renesas Technology Corp., Chiyoda-Ku, Tokyo (Japan) | ||
| Filed on Jun. 14, 2006, as Appl. No. 11/452,317. | ||
| Claims priority of application No. 2005-177415 (JP), filed on Jun. 17, 2005; and application No. 2006-060651 (JP), filed on Mar. 07, 2006. | ||
| Prior Publication US 2006/0285576 A1, Dec. 21, 2006 | ||
| Int. Cl. G01K 7/00 (2006.01) | ||
| U.S. Cl. 331—66 [331/57] | 4 Claims |
| 1. A semiconductor device comprising:
a first oscillator generating a first clock signal having positive temperature characteristics with respect to a frequency;
a second oscillator generating a second clock signal having negative temperature characteristics with respect to a frequency;
and
a temperature signal generation unit generating a temperature signal which is varied according to a temperature of said semiconductor
device based on said first and second clock signals, said temperature signal generation unit including:
a first counter counting the number of pulses of said first clock signal to a predetermined number and outputting a signal
activated while the number is counted; and
a second counter counting the number of pulses of said second clock signal while said signal outputted from said first counter
is activated and outputting a signal showing the counted number as said temperature signal.
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