Energy Citations Database

Searched:  Author Contains ("Venezia, V.C.") Sorted By:  Relevance, Descending Results:  1–14 of exactly 14 matches. (0.287 seconds) Sort Results By: Relevance Publication Date System Entry Date Resource/Doc Type Title Research Org Sponsoring Org OSTI Identifier Report Number(s) DOE Contract No Creator/Author(s) Digitize Docs Ascending Descending Return to Original Search Page Page 1 of 1     Show only (√) Items Clear all (√) Items Create Alert Refine Search Printer Friendly   Size Identifier Title Creator/Author (s) Pub Date Adopt-A-Doc   P99-105303 Comment on the paper entitled "Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon," by R. Kogler et al. Venezia, V.C. 2000 Jan 01 -   P01-110762 The Binding Energy of Vacancy Clusters Generated in Silicon by High-Energy Ion Implantation and Annealing in Silicon Venezia, V.C. 2001 Jan 01 - 0 K NREL/CP-520-35653 Measurement of Lattice Vacancy-Type Defects in Crystalline Si by a Au Labeling Technique Fiory, A. T. , Ravindra, N. M. , Kalyanaraman, R. , et.al. 2002 Aug 01 -   40277635 Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon Venezia, V. C. , Pelaz, L. , Gossmann, H.-J. L. , et.al. 2001 Aug 27 -   40277674 Depth dependence of {l_brace}311{r_brace} defect dissolution Venezia, V. C. , Kalyanaraman, R. , Gossmann, H.-J. L. , et.al. 2001 Sep 03 -   613951 Efficient production of silicon-on-insulator films by co-implantation of He{sup +} with H{sup +} Agarwal, A. , Haynes, T.E. , Venezia, V.C. , et.al. 1998 Mar 01 - 822 K ORNL/CP--96086; CONF-980528-- The role of implantation damage in the production of silicon-on-insulator films by co-Implantation of He{sup +} and H{sup +} Venezia, V.C. , Agarwal, A. , Haynes, T.E. , et.al. 1998 Jan 01 -   20702385 Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics Cubaynes, F.N. , Venezia, V.C. , Marel, C. van der , et.al. 2005 Apr 25 -   664654 Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling Venezia, V.C. , Eaglesham, D.J. , Haynes, T.E. , et.al. 1998 Nov 01 -   675104 Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation Weldon, M.K. , Collot, M. , Chabal, Y.J. , et.al. 1998 Dec 01 - 711 K CONF-970302--6 Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation Venezia, V.C. , Haynes, T.E. , Agarwal, A. , et.al. 1997 Apr 01 - 713 K ORNL/CP--96088; CONF-980528-- Vacancy supersaturations produced by high-energy ion implantation Venezia, V.C. , Eaglesham, D.J. , Jacobson, D.C. , et.al. 1998 Jan 01 -   20216505 Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling Kalyanaraman, R. , Haynes, T. E. , Venezia, V. C. , et.al. 2000 Jun 05 -   321455 Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon Venezia, V.C. , Haynes, T.E. , Agarwal, A. , et.al. 1999 Mar 01 - Top Return to Original Search Page Page 1 of 1