X19C Publications


Calendar Year
Total Pubs
Premier Pubs *
2009
2
0
2008
5
2
2007
17
4
2006
44
1
2005
16
2
2004
13
1
2003
30
2
2002
23
1
2001
20
1
2000
23
1
1999
12
3


  1. A Tikhonov, Ion-Size Effect at the Surface of a Silica Hydrosol, J. Chem. Phys., 130, 024512 (2009).
  2. J Carvajal, B Raghothamachar, O Silvestre, H Chen, M Pujol, V Petrov, M Dudley, M Aguilo, F Diaz, Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures, Cryst. Growth Des., 9(2), 653-656 (2009).
  3. Y Chen, N Zhang, M Dudley, J Caldwell, K Liu, R Stahlbush, X Huang, A Macrander, D Black, Investigation of Electron-Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers, J. Electron. Mater., 37(5), 706 (2008).
  4. Y Chen, M Dudley, E Sanchez, M Macmillan, Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses, J. Electron. Mater., 37(5), 713 (2008).
  5. C Su, S Lehoczky, B Raghothamachar, M Dudley, Crystal Growth and Characterization of CdTe Grown, Mater. Sci. Eng. B, 147, 35-42 (2008).
  6. H Chen, G Wang, M Dudley, Z Xu, J Edgar, T Batten, M Kuball, L Zhang, Y Zhu, Single-Crystalline B12As2 on m-plane (1100) 15R-SiC, Appl. Phys. Lett., 92, 231917 (2008).[ premier ]
  7. K Kashimoto, J Yoon, B Hou, C Chen, B Lin, M Aratono, T Takiue, M Schlossman, Structure and Depletion at Fluorocarbon and Hydrocarbon/Water Liquid/Liquid Interfaces, Phys. Rev. Lett., 101, 076102 (2008).[ premier ]
  8. M Schlossman, A Tikhonov, Molecular Ordering and Phase Behavior of Surfactants at Water-Oil Interfaces as Probed by X-Ray Surface Scattering, Annual Reviews of Physical Chemistry (2007).
  9. H Chen, G Wang, M Dudley, L Zhang, Y Zhu, J Edgar, Defect Structures in B12As2 Epitaxial Films Grown on c-Plane and a-Plane 6H-SiC Substrates, 2007 Materials Research Society Spring Meeting, Vol 994, p. F03-01, sponsored by Materials Research Society (2007).
  10. Y Chen, M Dudley, K Liu, R Stahlbush, Interaction between Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers, 2007 Materials Research Society Spring Meeting, Vol 994, p. F12-03, sponsored by Materials Research Society (2007).
  11. G Wang, Z Tan, X Liu, V Samuilov, M Dudley, Conductive MWNT/Poly (Vinyl Acetate) Composite Nanofibers by Electrospinning, 2007 Materials Research Society Spring Meeting, Vol 963, p. Q20-24, sponsored by Materials Research Society (2007).
  12. Y Chen, H Chen, N Zhang, M Dudley, R Ma, Investigation and of Low Angle Grain Boundaries in Hexagonal Silicon Carbide, 2007 Materials Research Society Spring Meeting, p. 107-50, sponsored by Materials Research Society (2007).
  13. G Wang, Y Ji, L Zhang, Y Zhu, P Gouma, M Dudley, Synthesis of Molybdenum Oxide Nanoplatelets During Crystallization of the Precursor Gel from its Hybrid Nanocomposites, Chem. Mater., 19, 979-981 (2007).
  14. Y Chen, M Dudley, Direct Determination of Dislocation Sense of Closed-Core Threading Screw Dislocations using Synchrotron White Beam X-ray Topography in 4H Silicon Carbide, Appl. Phys. Lett., 91, 141918 (2007).[ premier ]
  15. Y Chen, G Dhanaraj, M Dudley, E Sanchez, M MacMillan, Sense Determination of Micropipes via Grazing-Incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide, Appl. Phys. Lett., 91, 071917 (2007).[ premier ]
  16. M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, V Yakovlev, VO2 Films with Strong Semiconductor to Metal Phase Transition Prepared by the Precursor Oxidation Process, J. Appl. Phys., 102, 033504 (2007).
  17. I Kamata, H Tsuchida, W Vetter, M Dudley, High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers, J. Mater. Res., 22, 845-849 (2007).
  18. Z Gu, J Edgar, B Raghothamachar, M Dudley, D Zhuang, Z Sitar, D Coffey, Sublimation Growth of Aluminum Ntride on Silicon Carbide Substrate with Aluminum Nitride-Silicon Carbide Transition Layer, J. Mater. Res., 22, 675-680 (2007).
  19. A Tikhonov, Wigner Crystals of Na+ ions at the Surface of a Silica Hydrosol, J. Chem. Phys., 126(17), 171102 (2007).
  20. A Tikhonov, M Schlossman, Vaporization and Layering of Alkanols at the Oil/water Interface, J. Phys.: Condens. Matter, 19, 375101 (2007).
  21. Y Chen, M Dudley, K Liu, R Stahlbush, Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers, Appl. Phys. Lett., 90, 171930 (2007).[ premier ]
  22. J Bai, J Park, Z Cheng, M Curtin, B Adekore, M Carroll, A Lochtefeld, M Dudley, Study of the Defect Eliminations Mechanisms in Aspect Ratio Trapping Ge Growth, Appl. Phys. Lett., 90, 171930 (2007).[ premier ]
  23. A Tikhonov, Compact Layer of Alkali Ions at the Surface of Colloidal Silica , J. Phys. Chem. C, 111(2), 930-937 (2007).
  24. G Dhanaraj, Y Chen, M Dudley, D Cai, H Zhang, Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization, J. Electron. Mater., 35, 1513 (2007).
  25. D Zhuang, Z Herro, R Schlesser, B Ragothamachar, M Dudley, Z Sitar, Seeded Growth of AlN Crystals on Non-Polar Seeds Via Physical Vapor Transport, J. Electron. Mater., 35, 1513-1517 (2006).
  26. W Vetter, M Dudley, The Character of Micropipes in Silicon Carbide Single Crystals, Philos. Mag. Lett., 86, 1209-1225 (2006).
  27. G Dhanaraj, Y Chen, M Dudley, H Zhang, Growth and Surface Morphologies of 6H-SiC Bulk and Epitixial Crystals, Mater. Sci. Forum, 527-529, 67-70 (2006).
  28. W Vetter, H Tsuchida, I Kamata, M Dudley, Simulation of Threading Edge Dislocation Images in X-ray Topograghs of Silicon Carbide Homo-Epilayers, Mater. Sci. Forum, 527-529, 411-414 (2006).
  29. E Emorhokpor, E Carlson, J Wan, A Weber, C Basceri, R Sandhu, J Oliver, F Burkeen, A Somanchi, Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates, Mater. Sci. Forum, 527-529, 443-446 (2006).
  30. B Raghothamachar, R Dalmau, M Dudley, R Schlesser, D Zhuang, Z Herro, Z Sitar, Structural Characterization of Bulk AlN Crystals Grown from Self-Seeding and Seeding by SiC Substrates, Mater. Sci. Forum, 527-529, 1497-1500 (2006).
  31. Z Gu, J Edgar, B Raghothamachar, M Dudley, D Zhuang, Z Sitar, The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates, Mater. Sci. Forum, 527-529, 1501-1512 (2006).
  32. J Bai, X Huang, B Raghothamachar, M Dudley, B Wagner, R Davis, L Wu, Y Zhu, Strain Relaxation of GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates, Mater. Sci. Forum, 527-529, 1513-1516 (2006).
  33. C Su, S Lehoczky, C Li, B Ragothamachar, M Dudley, J Szoke, P Barczy, Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC), Mater. Sci. Forum, 508, 117-124 (2006).
  34. A Tikhonov, H Patel, S Garde, M Schlossman, Tail Ordering Due to Headgroup Hydrogen Bonding Interactions in Surfactant Monolayers at the Water-Oil Interface, J. Phys. Chem. B, 110, 19093-19096 (2006).
  35. A Tikhonov, Water Density in the Electric Double Layer at the Insulator/Electrolyte Solution Interface, J. Phys. Chem. B, 110, 2746-2750 (2006).
  36. G Wang, Y Ji, X Huang, X Yang, P Gouma, M Dudley, Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing, J. Phys. Chem. B, 110(47), 23777-23782 (2006).
  37. S Pingali, T Takiue, G Luo, A Tikhonov, N Ikeda, M Aratono, M Schlossman, X-ray Studies of Surfactant Ordering and Interfacial Phases at the Water-Oil Interface, J. Dispersion Sci. Technol., 27, 715-722 (2006).
  38. J Bai, X Huang, M Dudley, High-Resolution TEM Observation of AlN Grown on SiC and Sapphire Substrates, Mater. Sci. Semicond. Process., 9, 180-183 (2006).
  39. M Dudley, J Bai, X Huang, W Vetter, G Dhanaraj, B Raghothamachar, Synchrotron White Beam X-ray Topography, Transmission Electron Microscopy and High Resolution X-ray Diffraction Studies of Defects and Strain Relaxation Processes in Wide Bandgap Semiconductor Crystals and Thin Films, Mater. Sci. Semicond. Process., 9, 315-322 (2006).
  40. P Neudeck, A Trunek, D Spry, J Powell, H Du, M Skowronski, X Huang, M Dudley, CVD Growth of 3C-SiC on 4H/6H Mesas, Chem. Vap. Deposition, 12, 531-540 (2006).
  41. G Wang, Z Tan, X Liu, S Chawda, J Koo, V Samuilov, M Dudley, Conducting MWNT/poly (vinyl acetate) Composite Nanofibers by Electrospinning, Nanotech., 17(23), 5829-5835 (2006).
  42. G Carini, C Arnone, A Bolotnikov, G Camarda, R De Wames, J Dinan, J Markunas, B Raghothamachar, S Sivananthan, et al., Material Quality Characterization of CdZnTe Substrates for HgCdTe Epitaxy, J. Electron. Mater., 35(6), 1495-1502 (2006).
  43. B Raghothamachar, G Dhanaraj, J Bai, M Dudley, Defect Analysis in Crystals using X-ray Topography, Microsc. Res. Tech., 69, 343-358 (2006).
  44. J Bai, M Dudley, W Sun, H Wang, M Khan, Reduction of Threading Dislocation Densities in AlN/Sapphire Epilayers Driven by Growth Mode Modification, Appl. Phys. Lett., 88, 051903 (2006).[ premier ]
  45. G Dhanaraj, M Dudley, Y Chen, B Ragothamachar, B Wu, H Zhang, Epitaxial Growth and Characterization of Silicon Carbide Films, J. Cryst. Growth, 287, 344-348 (2006).
  46. B Raghothamachar, J Bai, M Dudley, R Dalmau, D Zhuang, Z Herro, R Schlesser, Z Sitar, B Wang, M Callahan, Characterization of Bulk Grown GaN and AlN Single Crystal Materials, J. Cryst. Growth, 287, 349-353 (2006).
  47. J Luo, D Shah, C Klemenz, M Dudley, H Chen, The Czochralski Growth of Large Diameter La3Ga5.5Ta0.5O14 Crystals Along Different Orientations, J. Cryst. Growth, 287, 300-304 (2006).
  48. M Volz, M Schweizer, B Raghothamachar, M Dudley, J Szoke, S Cobb, F Szofran, X-ray Characterization of Detached-Grown Germanium Crystals, J. Cryst. Growth, 290(2), 446-451 (2006).
  49. P Konkapaka, B Raghothamachar, M Dudley, Y Makarov, M Spencer, Crystal Growth and Characterization of Thick GaN Layers Grown by Oxide Vapor Transport Technique, J. Cryst. Growth, 289(1), 140-144 (2006).
  50. G Dhanaraj, M Dudley, D Bliss, M Callahan, M Harris, Growth and Process Induced Dislocations in Zinc Oxide Crystals, J. Cryst. Growth, 297(1), 74-79 (2006).
  51. S Malkova, R Stahelin, S Pingali, W Cho, M Schlossman, Orientation and Penetration Depth of Monolayer-Bound p40phox-PX, Biochemistry, 45, 13566-13575 (2006).
  52. A Tikhonov, X-ray Study of the Electric Double Layer at the n-Hexane/Nanocolloidal Silica Interface, J. Chem. Phys., 124(16), 164704 (2006).
  53. Y Chen, G Dhanaraj, M Dudley, H Zhang, Thernodynamic Studies of Carbon in Liquid Silicon Using the Central Atoms Model, J. Am. Ceram. Soc., 89, 2922-2925 (2006).
  54. J Bai, X Huang, M Dudley, Intersecting Basal Plane and Prismatic Plane Stacking Fault Structures in GaN/AlN epilayers on on-axis and off-cut 6H-SiC substrates, 2006 Materials Research Society Fall Meeting, p. 02.1-02.6, sponsored by Materials Research Society (2006).
  55. B Wu, J Bai, V Tassev, M Nakarmi, W Sun, X Huang, M Dudley, H Zhang, D Bliss, J Lin, Stress Evolution during the Early Stages of AlN Vapor Growth, 2006 Materials Research Society Fall Meeting, p. 01.1-01.6, sponsored by Materials Research Society (2006).
  56. S Wang, B Raghothamachar, M Dudley, A Timmerman, Crystal Growth and Defect Characterization of AlN Single Crystals, 2006 Materials Research Society Fall Meeting, p. 06.1-06.6, sponsored by Materials Research Society (2006).
  57. B Raghothamachar, P Konkapaka, H Wu, M Dudley, M Spencer, Structual Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide Powder Source, 2006 Materials Research Society Fall Meeting, p. 07.1-07.6, sponsored by Materials Research Society (2006).
  58. Y Chen, G Dhanaraj, W Vetter, M Dudley, H Zhang, Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films, 2006 Materials Research Society Meeting, p. 11.1-11.6, sponsored by Materials Research Society (2006).
  59. G Wang, K Sawicka, Y Ji, X Huang, M Dudley, P Gouma, Fabrication and Characterization of Molybdenum Oxide Nanofibers/Nanowhiskers by Electrospinning, 2006 Materials Research Society Meeting, p. 22.1-22.6, sponsored by Materials Research Society (2006).
  60. R Okojie, X Huang, M Dudley, M Zhang, P Pirouz, Process-induced Deformations and Stacking Faults in 4H-SiC, 2006 Materials Research Society Meeting, Vol 911, p. 145-150, sponsored by Materials Research Society (2006).
  61. Y Chen, G Dhanaraj, M Dudley, H Zhang, R Ma, Y Shishkin, S Saddow, Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC, 2006 Materials Research Society Meeting, p. 151-156, sponsored by Materials Research Society (2006).
  62. G Dhanaraj, Y Chen, H Chen, H Zhang, M Dudley, Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films, 2006 Materials Research Society Meeting, p. 157-162, sponsored by Materials Research Society (2006).
  63. H Chen, G Wang, Y Chen, X Jia, J Bai, M Dudley, The Formation Mechanism of Carrot Defects in SiC Epifilms, 2006 Materials Research Society Spring Meeting, p. 163-168, sponsored by Materials Research Society (2006).
  64. H Chen, B Raghothamachar, W Vetter, M Dudley, Y Wang, B Skromme, Effects of Different Defect Types On the Performance of Devices Fabricated On a 4H-SiC Homoepitaxial Layer, 2006 Materials Research Society Spring Meeting, p. 169-174, sponsored by Materials Research Society (2006).
  65. I Kamata, H Tsuchida, W Vetter, M Dudley, High-Resolution X-Ray Topography of Dislocations in 4H-SiC Epilayers, 2006 Materials Research Society Spring Meeting, p. 175-180, sponsored by Materials Research Society (2006).
  66. G Wang, X Huang, M Dudley, P Gouma, X Yang, Electrospum Tungsten Oxide Nanofibers: Fabrication and Characterization, 2006 Materials Research Society Spring Meeting, Vol 32, p. 0915, sponsored by Materials Research Society (2006).
  67. X Wang, D Cai, H Zhang, M Dudley, Novel Method for High Speed SiC Vapor Growth, 2006 Materials Research Society Meeting, p. 17-28, sponsored by Materials Research Society (2006).
  68. J Ruggles, G Foran, H Tanida, H Nagatani, Y Jimura, I Watanabe, I Gentle, Interfacial Behavior of Tetrapyridylporphyrin Monolayer Arrays, Langmuir, 22, 681-686 (2006).
  69. X Huang, J Bai, M Dudley, B Wagner, R Davis, Y Zhu, Step-Controlled Strain Relaxation in Vicinal Surface Epitaxy of Nitrides, Phys. Rev. Lett., 95, 086101-1 - 086101-4 (2005).[ premier ]
  70. G Dhanaraj, B Raghothamachar, J Bai, H Chung, M Dudley, Synchrotron X-ray Topographic Characterization of Defects in InP Bulk Crystals, 17th Indium Phosphide and Related Materials Conference, Vol 8th, p. cd rom (2005).
  71. B Raghothamachar, M Dudley, R Dalmau, R Schlesser, Z Sitar, Synchrotron White Beam X-ray Topography (SWBXT) and High Resolution Triple Axis Diffraction Studies on AlN layers Grown on 4H- and 6H-SiC Seeds, 2004 Materials Research Society Fall Meeting Proceedings, Vol 831, p. E8.24, sponsored by Materials Research Society Symposia (2005).
  72. B Raghothamachar, M Dudley, B Wang, M Callahan, D Bliss, P Konkapaka, H Wu, M Spencer, X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds, 2004 Materials Research Society Fall Meeting Proceedings, Vol 831, p. E8.23, sponsored by Materials Research Society Symposia (2005).
  73. J Bai, M Dudley, L Chen, B Skromme, P Hartlieb, E Michaels, J Kolis, B Wagner, R Davis, et al., Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at ~3.4eV and ~3.2eV, 2004 Materials Research Society Fall Meeting Proceedings, Vol 81, p. E11.37, sponsored by Materials Research Society (2005).
  74. X Huang, J Bai, M Dudley, R Dupuis, U Chowdhury, Expitaxial Tilting of GaN Grown on Vicinal Surfaces of Sapphire, Appl. Phys. Lett., 86, 211916 (2005).[ premier ]
  75. Y Wang, G Ali, M Mikhov, V Vaidyanathan, B Skromme, B Raghothamachar, M Dudley, Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes, J. Appl. Phys., 97, 013540-1 (2005).
  76. J Bai, X Huang, M Dudley, B Wagner, R Davis, L Wu, Y Zhu, Intersecting Basal Plane and Prismatic Stacking Fault Structures and their Formation Mechanisms in GaN, J. Appl. Phys., 98, 063510-1 - 063510-9 (2005).
  77. J Bai, M Dudley, L Chen, B Skromme, B Wagner, R Davis, U Chowdhury, R Dupuis, Structural Defects and Luminescence Features in Heteroepitaxial GaN Grown on On-Axis and Misoriented Substrates, J. Appl. Phys., 97, 116101 (2005).
  78. V Noveski, R Schlesser, B Raghothamachar, M Dudley, S Mahajan, S Beaudion, Z Sitar, Seeded Growth of Bulk AIN Crystals and Grain Evolution in Polycrystalline AIN Boules, J. Cryst. Growth, 279, 13-19 (2005).
  79. W Vetter, H Tsuchida, I Kamata, M Dudley, Simulation of Threading Dislocation Images in X-ray Topographs of Silicon Carbide Homo-Epilayers, J. Appl. Cryst., 38, 442-447 (2005).
  80. S Malkova, F Long, R Stahelin, S Pingali, D Murray, W Cho, M Schlossman, X-ray Reflectivity Studies of cPLA?-C2 Domains Adsorbed onto Langmuir Monolayers of SOPC, Biophys. J., 89, 1861 (2005).
  81. B Liu, J Edgar, B Raghothamachar, M Dudley, A Sarua, M Kuball, H Meyer, J Lin, H Jiang, et al., Free Nucleation of Aluminum Nitride Single Crystals in HPBN Crucible by Sublimation, Mater. Sci. Eng. B, 117, 99-104 (2005).
  82. S Pingali, T Takiue, G Luo, A Tikhonov, N Ideda, M Aratono, M Schlossman, X-ray Reflectivity and Interfacial Tension Study of the Structure and Phase Behavior of the Interface Between Water anbd Mixed Surfactant Solutions of CH3(CH2)19OH and CF3(CF2)7(CH2)2OH in Hexane, J. Phys. Chem. B, 109, 1210-1225 (2005).
  83. M Schlossman, X-ray Scattering from Liquid-Liquid Interfaces, Physica B, 357(1-2), 98-105 (2005).
  84. M Hollingsworth, M Peterson, J Rush, M Brown, M Abel, A Black, M Dudley, B Raghothamachar, U Werner-Zwanziger, et al., Memory and Perfection in Ferroelastic Inclusion Compounds, Cryst. Growth Des., 5, 2100-2116 (2005).
  85. G Dhanaraj, M Dudley, R Ma, H Zhang, V Prasad, Design and Fabrication of Physical Vapor Transport System for the Growth of SiC Crystals, Rev. Sci. Instrum., 75, 2843-2847 (2004).
  86. W Vetter, R Nagarajan, J Edgar, M Dudley, Double Positioning Twinning in Icosohedral B12As2 Thin Films Grown by Chemical Vapor Deposition, Mater. Lett., 58, 1331-1335 (2004).
  87. F Akin, I Jang, M Schlossman, S Sinnott, G Zajac, E Fuoco, M Wijesundara, M Li, A Tikhonov, et al., Nanostructure of Fluorocarbon Films Deposited on Polystyrene from Hyperthermal C3F5+ Ions, J. Phys. Chem. B, 108, 9656-9664 (2004).
  88. W Cho, X Huang, M Dudley, Exact Formulation for Pi-Polarization Waves of Dynamical X-ray Diffraction, Acta Cryst. A, 60, 195-197 (2004).
  89. W Vetter, M Dudley, Characterization of Defects in 3C-SiC Crystals, J. Cryst. Growth, 260, 201-208 (2004).
  90. J Bai, M Dudley, B Raghotamachar, P Gouma, B Skromme, L Chen, P Hartlieb, E Michaels, J Kolis, Correlated Structural and Optical Characterization of Ammonothermally Grown Bulk GaN, Appl. Phys. Lett., 84, 3289-3291 (2004).[ premier ]
  91. W Vetter, M Dudley, Micropipes and the Closure of Axial Screw Dislocation Cores in Silicon Carbide Single Crystals, J. Appl. Phys., 96, 348-353 (2004).
  92. A Tikhonov, S Pingali, M Schlossman, Molecular Ordering and Phase Transitions in alkanol Monolayers at the Water–Hexane Interface, J. Chem. Phys., 120(24), 11822-11838 (2004). [ ]
  93. W Vetter, M Dudley, The Contrast of Inclusions Compared with that of Micropipes in Back-Reflection Synchrotron White Beam Topographs of SiC, J. Appl. Cryst., 37, 200-2003 (2004).
  94. X Huang, M Dudley, W Cho, R Okojie, P Neudeck, Characterization of SiC Epitaxial Structures using High-Resolution X-ray Diffraction Techniques, International Conference on SiC and Related Materials 2003, Vol 457-460, p. 157-162, sponsored by CNRS et al (2004).
  95. X Ma, M Dudley, T Sudarshan, Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research, International Conference on Silicon Carbide and Related Materials 2003, Vol 457-460, p. 601-604, sponsored by CNRS et al (2004).
  96. J Bai, G Dhanaraj, P Gouma, M Dudley, M Mynbaeva, Porous SiC for HT Chemical Sensing Devices: An Assessment of its Thermal Stability, International Conference on Silicon Carbide and Related Materials, Vol 457-460, p. 1479-1482, sponsored by CNRS et al (2004).
  97. B Liu, J Edgar, Z Gu, D Zhuang, B Raghothamachar, M Dudley, A Sarua, M Kuball, H Meyer, The Durability of Various Crucible Materials for Aluminum Nitride Crystal growth by Sublimation, J. Nitride Semicond. Res., 9, 6 (2004).
  98. D Gidalevitz, Y Ishitsuka, A Muresan, O Konovalov, A Waring, R Lehrer, K Lee, Interaction of antimicrobial peptide protegrin with biomembranes, Proc Natl Acad Sci USA, 100(11), 6302-6307 (2003). [ ][ premier ]
  99. R Ma, H Zhang, M Dudley, V Prasad, Thermal System Design And Dislocation Reduction For Growth Of Wide Bandgap Crystals, HTC ASME Summer Heat Transfer Conference (2003).
  100. X Huang, M Dudley, A Universal Computation Method for Two-Beam Dynamical X-ray Diffraction, Acta Cryst. A, 59, 163-167 (2003). [ ]
  101. X Zhang, B Raghothamachar, D Meier, M Dudley, S Mahajan, A Study on Dendritic Web Silicon Growth, 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, p. 73-76, sponsored by NREL (2003).
  102. M Schlossman, A Tikhonov, X-ray Scattering Studies of Long-Chain Alkanol Monolayers at the Water-Hexane Interface, American Chemical Society Symposium Series, Vol 861, p. 81-95, sponsored by American Chemical Society (2003).
  103. P Neudeck, J Powell, D Spry, A Trunek, X Huang, W Vetter, N Dudley, M Skowronski, J Liu, Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy, 4th European Conference on Silicon Carbide and related Materials, Vol 433-436, p. 213-216, sponsored by European Commission (2003).
  104. M Dudley, X Huang, W Vetter, P Neudeck, Synchrotron White Beam X-ray Topography and High Resolution Triple Axis X-ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices, 4th European Conference on Silicon Carbide and Related Materials, Vol 433-436, p. 247-252, sponsored by European Commission (2003).
  105. R Ma, H Zhang, M Dudley, S Ha, M Skowronski, Modeling for mass transfer and Thermal Stress of Silicon carbide PVT growth, 2002 ASME International Mechanical Engineering Congress and Exposition, Vol 1, p. 1-9, sponsored by ASME (2003).
  106. M Dudley, Studies of Defects and Strains Using X-ray Topography and Diffraction, 2003 SEM Annual Conference & Exposition on Experimental and Applied Mechanics, Vol 1, p. 348-355, sponsored by SEM (2003).
  107. U Zimmermann, J Osterman, D Kuylenstierna, A Hallen, A Konstantinov, W Vetter, M Dudley, Material Defects in 4H-Silicon Carbide Diodes, J. Appl. Phys., 93(1), 611 (2003).
  108. M Li, D Chaiko, M Schlossman, X-ray Reflectivity Study of a Monolayer of Ferritin Proteins at a Nanofilm Aqueous-Aqueous Interface, J. Phys. Chem. B, 107, 9079-9085 (2003). [ ]
  109. A Tikhonov, M Schlossman, Surfactant and water ordering in triacontanol monolayers at the water-hexane interface, J. Phys. Chem. B, 107, 3344 (2003). [ ]
  110. L Hanley, Y Choi, E Fuoco, F Akin, M Wijesundara, M Li, A Tikhonov, M Schlossman, Controlling the Nanoscale Morphology of Organic Films Deposited by Polyatomic Ions, Nucl. Instrum. Meth. B, 203, 116 (2003). [ ]
  111. J Hartwig, J Baruchel, H Kuhn, X Huang, M Dudley, E Pernot, X-ray “Magnifying” Imaging Investigation of Giant Burgers Vector Micropipe Dislocations in 4H-SiC, Nucl. Instrum. Meth. B, 200, 323-328 (2003). [ ]
  112. R Okojie, T Holzheu, X Huang, M Dudley, X-ray Diffraction Measurement of Doping-Induced Lattice Mismatch in n-Type 4H-SiC Epilayers Grown on p-Type Substrates, Appl. Phys. Lett., 83, 1971-1973 (2003).[ premier ]
  113. B Wu, R Ma, H Zhang, M Dudley, R Schlesser, Z Sitar, Growth kinetics and thermal stress in AlN bulk crystal growth, J. Cryst. Growth, 253, 326-339 (2003).
  114. W Fullagar, K Arbedeen, D Bucknall, P Kroon, I Gentle, Conformational Changes in SP-B as a Function of Surface Pressure, Biophys. J., 85(4), 2624 (2003).
  115. B Raghothamachar, M Dudley, J Rojo, K Morgan, L Schowalter, X-ray Characterization of Bulk AlN Single Crystals Grown by the Sublimation Technique, J. Cryst. Growth, 250, 244-250 (2003). [ ]
  116. W Vetter, M Dudley, Characterization of Defects in 3C-SiC Crystals, J. Cryst. Growth, 260, 201-208 (2003).
  117. W Palosz, K Grasza, K Durose, D Halliday, N Boyall, M Dudley, B Raghothamachar, L Cai, The Effect of Wall Contact and Post-Growth Cool-Down on Defects in CdTe Crystals Grown by “Contactless” Physical Vapor Transport, J. Cryst. Growth, 254, 316-328 (2003).
  118. E Preble, p Miraglia, A Roskowski, W Vetter, M Dudley, R Davis, Domain Structures in 6H-SiC Wafers and Their Effect on the Microstructures of GaN Films Grown on AlN and Al0.2GaN0.8N Buffers Layers, J. Cryst. Growth, 258, 75-83 (2003).
  119. R Ma, H Zhang, M Dudley, V Prasad, Thermal System Design and Dislocation Reduction for Growth of Wide Band-gap Crystals: Application to SiC Growth, J. Cryst. Growth, 258, 318-330 (2003).
  120. M Dudley, X Huang, W Vetter, Contribution of X-ray Topography and High Resolution Diffraction to the Study of Defects in SiC, J. Phys. D: Appl. Phys., 36, A30-A36 (2003).
  121. W Vetter, M Dudley, Open-Ended Stacking Fault Tetrahedra in X-ray Topographs of Cubic Silicon Carbide, Philos. Mag. Lett., 83, 473-476 (2003).
  122. X Ma, M Dudley, W Vetter, T Sudharshan, Extended Defects: Polarized Light Microscopy Delineation and Synchrotron White Beam X-ray Topography Ratification, Japanese J. Appl. Phys., 42, L1077-L1079 (2003).
  123. B Yang, D Li, S Rice, Structure of the liquid-vapor interface of a dilute ternary alloy: Pb and In in Ga, Phys. Rev. B: Condens. Matter, 67, 05423 (2003).
  124. B Yang, D Li, S Rice, Two Dimensional Freezing of Tl in the Liquid-Vapor Interface of a Dilute Tl in Ga Alloy, Phys. Rev. B: Condens. Matter, 67, 212103 (2003).
  125. W Vetter, J Liu, M Dudley, M Skowronski, H Lendenmann, C Hallin, Dislocation Loops Formed During the Degradation of Forward-Biased 4H-SiC p-n Junctions, Mater. Sci. Eng. B, 98, 220-224 (2003).
  126. L Schowalter, G Slack, J Whitlock, K Morgan, S Schujman, B Raghothamachar, M Dudley, K Evans, Fabrication of Native, Single Crystals AlN Substrates, Phys. Status Solidi C, 0(7), 1997-2000 (2003).
  127. X Xu, R Vaudo, G Brandes, J Bai, P Gouma, M Dudley, Chemical Mechanical Polishing for Decoration and Measurement of Dislocations on Free Standing GaN Wafers, Phys. Status Solidi C, 0(7), 2460-2463 (2003).
  128. D Li, B Yang, S Rice, Structure of the liquid-vapor interface of a dilute ternary alloy: Pb and Sn in Ga, Phys. Rev. B: Condens. Matter, 65(22), 224202 (2002).
  129. R Ma, H Zhang, V Prasad, M Dudley, Growth kinetics and thermal stress of silicon carbide, Cryst. Growth Des., 2(3), 213-220 (2002). [ ]
  130. M Li, M Schlossman, X-ray scattering of thin liquid films: Beyond the harmonic approximation, Phys Rev. E: Stat. Phys., Plasmas, Fluids, 65, 061608 (2002).
  131. M Schlossman, Liquid-liquid interfaces: studied by X-ray and neutron scattering, Curr. Opin. Colloid Interface Sci., 7, 235-243 (2002).
  132. W Vetter, D Gallagher, M Dudley, Synchrotron White-beam X-ray Topography of Ribonuclease S Crystals, Acta Cryst. D, D58, 579-584 (2002).
  133. M Dudley, W Vetter, P Neudeck, Polytype Identification in Heteroepitaxial 3C-SiC Grown on 4H-SiC Mesas Using Synchrotron White Beam X-ray Topography, J. Cryst. Growth, 240, 22 (2002).
  134. W Vetter, H Totsuka, M Dudley, B Kahr, The Perfection and Defect Structure of Organic Hourglass Inclusion K2SO4 Crystals, J. Cryst. Growth, 241, 498-506 (2002).
  135. B Raghothamachar, W Vetter, M Dudley, R Dalmau, R Schlesser, Z Sitar, E Michaels, J Kolis, Synchrotron White Beam Topography Characterization of Physical Vapor Transport Grown AlN and Ammonothermal GaN, J. Cryst. Growth, 246, 271-280 (2002).
  136. M Hollingsworth, M Brown, M Dudley, H Chung, M Peterson, A Hillier, Template Effects, Asymmetry and Twinning in Helical Inclusion Compounds, Angew. Chem. Int. Ed., 41, 965-969 (2002).[ premier ]
  137. E Sanchez, J Liu, M De Graef, M Skowronski, W Vetter, M Dudley, Nucleation of Threading Dislocations in Sublimation Grown Silicon Carbide, J. Appl. Phys., 91, 1143-1148 (2002).
  138. S Ha, M Skowronski, W Vetter, M Dudley, Basal Plane Slip and Formation of Mixed-Tilt Boundaries, in Sublimation-Grown Hexagonal Polytype Silicon Carbide Single Crystals, J. Appl. Phys., 92, 778-785 (2002).
  139. P Neudeck, J Powell, G Beheim, E Benavage, P Abel, A Trunek, D Spry, M Dudley, W Vetter, Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers, J. Appl. Phys., 92, 2391-2400 (2002).
  140. M Skowronski, J Liu, W Vetter, M Dudley, C Hallin, H Lendenmann, Recombination-Enhanced Defect Motion in Forward-Biased 4H-SiC p-n Diodes, J. Appl. Phys., 92, 4699-4704 (2002).
  141. M Li, A Tikhonov, M Schlossman, An X-ray diffuse scattering study of domains in F(CF2)10(CH2)2OH monolayers at the hexane-water interface, Europhys. Lett., 58(1), 80 (2002).
  142. M Dudley, W Vetter, P Neudeck, J Powell, Polytype Identification and Mapping in Hetroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White Beam X-ray Topography, International Conference on Silicon Carbide and Related Materials 2001, Vol 389-393, p. 391-394, sponsored by Science & Technology Promotion Foundation of Ibaraki (et al) (2002).
  143. P Neudeck, J Powell, A Trunek, X Huang, M Dudley, Growth of defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy, International Conference on Silicon Carbide and Related Materials 2001, Vol 389-393, p. 311-314, sponsored by Science & Technology Promotion Foundation of Ibaraki (et al) (2002).
  144. P Neudeck, J Powell, A Trunek, D Spry, G Beheim, E Benavage, P Abel, W Vetter, M Dudley, Homoepitaxial “Web Growth” of SiC to Terminate c-axis Screw Dislocations and Enlarge Step-Free Surfaces, International Conference on Silicon Carbide and Related Materials 2001, Vol 389-393, p. 251-254, sponsored by Science & Technology Promotion Foundation of Ibaraki (et al) (2002).
  145. S Ha, W Vetter, M Dudley, M Skowronski, A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers”, , International Conference on Silicon Carbide and Related Materials 2001, Vol 389-393, p. 443-446, sponsored by Science & Technology Promotion Foundation of Ibaraki (et al) (2002).
  146. B Skromme, K Palle, C Poweleit, L Bryant, W Vetter, M Dudley, K Moore , T Gehoski, Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers, International Conference on Silicon Carbide and Related Materials 2001, Vol 389-393, p. 455-458, sponsored by Science & Technology Promotion Foundation of Ibaraki (et al) (2002).
  147. R Dalmau, B Raghothamachar, M Dudley, R Schlesser, Z Sitar, Crucible Selection in AlN Bulk Crystal Growth, 2003 Materials Research Society Fall Meeting Proceedings, Vol 798, p. Y2.9, sponsored by Materials Research Society (2002).
  148. J Rojo, L Schowalter, G Slack, K Morgan, J Barani, S Schujman, S Biswas, B Raghothamachar, M Dudley, et al., Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals, Materials Research Society Spring Meeting 2002, Vol 722, p. 5-13, sponsored by Materials Research Society (2002).
  149. Y Seo, K Kim, K Shin, H White, M Rafailovich, J Sokolov, B Lin, H Kim, C Zhang, Morphology of Ampiphilic Gold/Dendrimer Nanocomposite Monolayers, Langmuir, 18, 5927-5932 (2002).
  150. B Raghothamachar, J Bai, W Vetter, P Gouma, M Dudley, M Mynbaeva, M Smith, S Saddow, Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them, 2002 Material Research Society Fall Meeting Proceedings, Vol 742, p. K2.11, sponsored by Materials Research Society Symposia (2002).
  151. M Dudley, X Huang, W Vetter, G Dhanaraj, Synchrotron White Beam X-ray Topography Characterization of Defects in Technologically Important SiC and InP Single Crystals, International Workshop on the Preparation and Characterization of Technologically Important Single Crystals, p. 44-51, sponsored by National Physical Laboratory (2001).
  152. M Li, A Tikhonov, D Chaiko, M Schlossman, Coupled Capillary Wave Fluctuations in Thin Aqueous Films on an Aqueous Subphase, Phys. Rev. Lett., 86, 5934 (2001).[ premier ]
  153. J Peng, G Barnes, I Gentle, G Foran, T Le, M Crossley, X-ray Scattering Studies of Mixed Langmuir Monolayers and Langmuir-Blodgett Films of a Non-Centrosymmetric Porphyrin with Cadmium Arachidate, Langmuir, 17, 1936-1940 (2001).
  154. X Huang, M Dudley, J Zhao, Forbidden X-ray Wavefields of Three-Beam Bragg Reflections from Thick Crystals, Acta Cryst. A, 57(1), 68-75 (2001).
  155. B Raghothamachar, Synchrotron white beam x-ray characterization of growth defects in bulk compound semiconductors, Ph.D. Thesis. State Univ. of New York at Stony Brook, Stony Brook (2001).
  156. E Sanchez, J Liu, W Vetter, M Dudley, R Bertke, W Mitchel, M Skowronski, Effect of Surface Finish on the Dislocation Density in Sublimation Grown SiC Layers, Materials Research Society Meeting, Vol 640, p. H1.3.1-H1.3.6, sponsored by MRS (2001).
  157. S Saddow, G Melnychuk, M Mynbaeva, I Nikitina, W Vetter, L Jin, M Dudley, M Shamsuzzoha, V Dmitriev, Structural Characterization of SiC Epitaxial Layers Grown on Porous SiC Substrates, Materials Research Society Meeting, Vol 640, p. H2.7.1-H2.7.6, sponsored by MRS (2001).
  158. M Dudley, X Huang, W Vetter, G Dhanaraj, Tailoring X-ray Beam Energy Spectrum to Enhance Image Quality of New Radiography Contrast Agents Based on Gd or Other Lanthanides, International Workshop on Preparation and Characterization of Technologically Important Single Crystals, p. 44-51, sponsored by National Physical Laboratory, New Delhi, India (2001).
  159. V Prasad, Q Chen, H Zhang, M Dudley, Role of Modeling in Process and System Development for Crystal Growth, International Workshop on Preparation and Characterization of Technologically Important Single Crystals, p. 95-102, sponsored by National Physical Laboratory, New Delhi, India (2001).
  160. M Dudley, B Raghothamachar, H Chen, W Johnson, S Tiddrow, A Khan, C Fazi, Synchrotron White Beam X-ray Topography Characterization of Defects in Technologically Important SiC and InP Single Crystals, 15th European Frequency and Time Forum, p. 284-288, sponsored by Swiss Foundation for Research in Microtechnology (2001).
  161. T Kuhr, E Sanchez, M Skowronski, W Vetter, M Dudley, Hexagonal Voids and the Formation of Micropipes During SiC Sublimation Growth, J. Appl. Phys., 89(8), 4625-4630 (2001).
  162. E Sanchez, S Ha, J Grim, M Skowronski, W Vetter, M Dudley, R Bertke, W Mitchel, Assessment of Polishing Related Surface Damage in Silicon Carbide, J. Electrochem. Soc., 149, G131 (2001).
  163. A Tikhonov, M Li, M Schlossman, Phase Transition Behavior of Fluorinated Monolayers at the Water-Hexane Interface, J. Phys. Chem. B, 105, 8065 (2001).
  164. W Vetter, W Huang, P Neudeck, J Powell, M Dudley, Synchrotron White Beam Topographic Studies of 2H SiC Single Crystals, J. Cryst. Growth, 224(3-4), 269-273 (2001).
  165. J Rojo, G Slack, K Morgan, B Raghothamachar, M Dudley, L Schowalter, Report on the Growth of Bulk Aluminum Nitride and Subsequent Substrate Preparation, J. Cryst. Growth, 231(3), 317-321 (2001).
  166. W Vetter, M Dudley, X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in haxagonal silicon carbide, J. Appl. Cryst., 34, 20-26 (2001).
  167. D Mitrinovic, S Williams, M Schlossman, X-ray study of oil-microemulsion and oil-water interfaces in ternary amphiphilic systems, Phys Rev. E: Stat. Phys., Plasmas, Fluids, 63, 021601 (2001).
  168. E Vetter, M Dudley, Partial Dislocations in the X-ray Topography of As-Grown Hexagonal Silicon Carbide Crystals, Mater. Sci. Eng. A, B87, 173-177 (2001).
  169. M Wijesundara, G Zajac, E Fuoco, L Hanley, Aging of Fluorocarbon Thin Films Deposited on Polystyrene from Hyperthermal C3F5+ and CF3+ Ion Beams, J. Adhes. Sci. Technol., 15, 599-612 (2001).
  170. W Vetter, M Dudley, Transmission Electron Microscopic Studies of Dislocations in PVT-Grown Silicon Carbide, Philos. Mag. A, 81(12), 2885-2902 (2001).
  171. C Schnabel, M Tabib-Azar, P Neudeck, S Bailey, H Su, M Dudley, Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes, Mater. Sci. Forum, 338, 489-492 (2000).
  172. B Yang, D Li, Z Huang, S Rice, The structure of the liquid-vapor interface of a dilute Pb in Ga alloy, Phys. Rev. B: Condens. Matter, 62, 13111-13120 (2000).
  173. D Chekmarev, D Oxtoby, S Rice, Test of the universal local pseudopotential for the description of an inhomogeneous metal, Phys. Rev. B: Condens. Matter, 61, 10116-10124 (2000).
  174. C Su, M Dudley, R Matyi, S Feth, S Lehoczky, Characterizations of ZnSe Single Crystals Grown by Physical Vaport Transport, J. Cryst. Growth, 208, 237-247 (2000).
  175. I Baker, F Liu, K Jia, X Hu, D Cullen, M Dudley, X-ray Topographic Observations of Dislocation/Grain Boundary Interactions in Ice, Ann. Glac., 31, 103-117 (2000).
  176. W Vetter, M Dudley, Micropipes in Silicon Carbide Crystals: Do All Screw Disloctions have Open Cores, J. Mater. Res., 15, 1649-52 (2000).
  177. A Tikhonov, D Mitrinovic, M Li, Z Huang, M Schlossman, An X-ray reflectivity study of the water-docosane interface, J. Phys. Chem. B, 104, 6336 (2000).
  178. E Bitto, M Li, A Tikhonov, M Schlossman, W Cho, Mechanism of annexin-I mediated membrane aggregation, Biochemistry, 39, 13469-13477 (2000).
  179. M Schlossman, M Li, D Mitrinovic, A Tikhonov, X-ray scattering from liquid-liquid interfaces, High Perform. Polym., 12, 551-563 (2000).
  180. D Cullen, X Hu, I Baker, M Dudley, Dislocation Motion at Notch-Tips in Ice Single Crystals: Experiments and Interpretation, Cold Regions Sci.Technol., 31, 103-117 (2000).
  181. P Neudeck, M Kuczmarski, M Dudley, W Vetter, H Su, Electrical Behavior of X-ray Imaged Defects in SiC High Field Devices, Wide-Bandgap Electronic Devices, Mat. Res. Soc. Symp., p. 622 (2000).
  182. M Schlossman, M Li, D Mitrinovic, A Tikhonov, X-ray surface scattering studies of molecular ordering at liquid-liquid interfaces, Applications of Synchrotron Radiation Techniques to Materials Science V, Vol 590, p. 165 (2000).
  183. M Dudley, X Huang, Characterization of SiC Using Synchrotron White Beam X-ray Topography, in Silicon Caride, III-Nitrides and Related Materials 1999, p. 431-436, Materials Science Forum, Trans Tech Publications (2000).
  184. M Shamsuzzoha, S Saddow, L Jin, T Schattner, M Dudley, S Rendakova, V Dmitriev, Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes, in Silicon Caride, III-Nitrides and Related Materials 1999, p. 453-456, Materials Science Forum, Trans Tech Publications (2000).
  185. M Dudley, W Huang, W Vetter, P Neudeck, J Powell, Synchrotron White Beam Topography Studies of 2H SiC Crystals, in Silicon Carbide III-Nitrides and Related Materials 1999, p. 465-468, Materials Science Forum, Trans. Tech Publications (2000).
  186. M Dudley, W Vetter, W Huang, P Neudeck, J Powell, Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet, in Silicon Carbide, III-Nitrides and Related Materials 1999, p. 469-472, Trans Tech Publications (2000).
  187. T Kuhr, W Vetter, M Dudley, M Skowronski, X-ray Characterization of 3 Inch Diameter 4H and 6H-SiC Experimental Wafers, in Silicon Carbide, III-Nitrides and Related Materials 1999, p. 473-476, Materials Science Forum, Trans Tech Publications (2000).
  188. C Schnabel, M Tabib-Azar, P Neudeck, S Bailey, H Su, M Dudley, Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes, in Silicon Carbide, III-Nitrides and Related Materials, p. 489-492, Materials Science Forum (2000).
  189. D Cullen, X Hu, I Baker, M Dudley, Dislocation Motion Around Loaded Notches in Ice Single Crystals, in Applications of Synchrotron Radiation Techniques to Materials Science V, Vol 590, sponsored by Mat. Res. Soc. Symp. Proc. (2000).
  190. D Bliss, G Bryant, G Atypas, B Rhaghothamahar, G Dhanaraj, M Dudley, J Zhao, X-ray Characterization of Bulk InP:S Crystals Grown by LEC in a Low Thermal Gradient, Proceedings of 12th International Conference on Indium Phosphide and Related Materials, p. 530-533 (2000).
  191. D Bliss, Recent Progress in Bulk InP Crystal Growth, Proceedings of 2nd International School on Crystal Growth Technology, p. 374-412 (2000).
  192. J Peng, G Lawrie, G Barnes, I Gentle, G Foran, M Crossley, Z Huang, X-ray scattering studies of mixed monolayers of tetrakis (3,5-di-tert butylphenyl) porphinatocopper (II) with cadmium arachidate at the air/water interface, Langmuir, 16, 7051-7055 (2000).
  193. D Mitrinovic, A Tikhonov, M Li, Z Huang, M Schlossman, Noncapillary-wave structure at the water-alkane interface, Phys. Rev. Lett., 85, 582 (2000).[ premier ]
  194. B Yang, D Gidalevitz, D Li, Z Huang, S Rice, Two-dimensional freezing in the liquid-vapor interface of a dilute Pb:Ga alloy, Proc Natl Acad Sci USA, 96, 13009 (1999).[ premier ]
  195. P Neudeck, W Huang, M Dudley, Study of Bulk and Elementary Screw Disloction Assisted Reverse Breakdown in Low-Voltage (<250V) 4H-SiCp+n Junction Diodes - Part 1: DC Properties, IEEE Trans. Electron. Devices, Vol 46, p. 478-484 (1999).
  196. J Su, H Chung, Y Guo, M Dudley, H Volz, C Salles, R Matyi, Characterization of Microgravity and Ground-Based Grown Crystals Using Synchrotron White Beam X-ray Topography and High Resolution Triple Axis X-ray Diffraction, Advances in X-ray Analysis, Vol 41, p. 148-154 (1999).
  197. B Raghothamachar, H Chung, M Dudley, D Larson, Synchrotron White Beam X-ray Topography Studies of Structural Defects in Microgravity Grown CeZnTe Single Crystals, Advances in X-ray Analysis, Vol 41, p. 195-202 (1999).
  198. X Huang, M Dudley, J Zhao, B Raghothamachar, Dependence of the Direct Dislocation Image on Sample-to-Film Distance in X-ray Topography, Philos. Trans. R. Soc. London, Ser. A, Vol A357, p. 2659-2670 (1999).
  199. S Saddow, M Okuysen, M Mazzola, M Dudley, X Huang, W Huang, M Shamsuzzoha, Characterization of Single-Crystal 3C-SiC on Si Epitaxial Layers in III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics, Mat. Res. Soc. Symp. Proc., Vol 535, p. 107-112 (1999).
  200. D Bliss, J Zhao, G Bryant, R Lancto, M Dudley, V Prasad, Dislocation Generation near the Seed-Crystal Interface During MLEC Growth of Sulfur-Doped InP, 11th International Conference on Indium Phoshide and Related Materials, p. 163-166, sponsored by IEEE (1999).
  201. W Vetter, Characterization of Dislocation Structures in Silicon Carbide Single Crystals, Ph.D. Thesis. Dept. of Materials Science & Eng., SUNY Stony Brook, Stony Brook (1999).
  202. X Huang, M Dudley, W Vetter, W Huang, S Wang, C Carter, Direct evidence of micropipe-related pure superscrew dislocations in SiC, Appl. Phys. Lett., 74, 353-355 (1999).[ premier ]
  203. M Dudley, X Huang, W Huang, A Powell, S Wang, P Neudeck, M Skowronski, The Mechanism of Micropipe Nucleation at Inclusions in Silicone Carbide, Appl. Phys. Lett., 75, 784-786 (1999).[ premier ]
  204. X Huang, M Dudley, W Vetter, W Huang, W Si, C Carter, Superscrew dislocation contrast on synchrotron white-beam topographs: An accurate description of the direct disloation image, J. Appl. Cryst., 32, 516-524 (1999).
  205. M Dudley, X Huang, W Huang, Assessment of Orientation and Extinction Contrast Contributions to the Direct Dislocation Image, J. Phys. D: Appl. Phys., 32, A139-A144 (1999).

[ premier ] - A publication is considered premier if the journal has an impact factor of 6 or greater (from Journal Citation Report 2003, Thomson Institute for Scientific Information). These journals represent approximately the top 3% of all journals. Two additional journals are included in the NSLS premier list, Applied Physics Letters (impact factor 4.0) and Environmental Sciences and Technology (impact factor 3.6), because these journals represent the "best in class" for the NSLS industrial and environmental science users, even though their impact factors are less than 6.