GLTRS--Glenn
TITLE AND SUBTITLE:
Thin and Thick Film Materials Based Interconnection Technology for 500 °C Operation

AUTHOR(S):
Liang-Yu Chen, Gary W. Hunter, and Philip G. Neudeck

REPORT DATE:
August 2000

FUNDING NUMBERS:
WU-242-90-0C-00

PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES):
National Aeronautics and Space Administration
John H. Glenn Research Center at Lewis Field
Cleveland, Ohio 44135-3191

PERFORMING ORGANIZATION REPORT NUMBER:
E-12188

SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES):
National Aeronautics and Space Administration
Washington, DC 20546-0001

REPORT TYPE AND DATES COVERED:
Technical Memorandum

SPONSORING/MONITORING AGENCY REPORT NUMBER:
NASA TM-2000-209940

SUPPLEMENTARY NOTES:
Prepared for the First International Conference on Microelectronics and Interfaces sponsored by the American Vacuum Society, Santa Clara, California, February 7-11, 2000. Liang-Yu Chen, AYT Corporation, 2001 Aerospace Parkway, Brook Park, Ohio 44142 (work funded under contract NAS3-27571); Gary W. Hunter and Philip G. Neudeck, NASA Glenn Research Center. Responsible person, Gary W. Hunter, organization code 5510, (216) 433-6459.

ABSTRACT:
Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 °C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the bonding layer. After a 500-hr soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hr anneal. Further durability testing of this high temperature interconnection technology is also discussed.


SUBJECT TERMS:
Packaging; Electronics; SiC; Interconnection; Sensor

NUMBER OF PAGES:
10

PDF AVAILABLE FROM URL:
2000/TM-2000-209940.pdf
( 190 KB )

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