| US 7,420,441 B2 | ||
| Method of manufacturing monolithic surface acoustic wave device and integrated circuit | ||
| Aritsugu Yajima, Machida (Japan); Hisakatsu Sato, Sakata (Japan); and Takashi Kojima, Shiojiri (Japan) | ||
| Assigned to Seiko Epson Corporation, Tokyo (Japan) | ||
| Filed on Dec. 16, 2005, as Appl. No. 11/304,766. | ||
| Claims priority of application No. 2004-367210 (JP), filed on Dec. 20, 2004; and application No. 2005-269716 (JP), filed on Sep. 16, 2005. | ||
| Prior Publication US 2006/0131678 A1, Jun. 22, 2006 | ||
| Int. Cl. H03H 9/00 (2006.01) | ||
| U.S. Cl. 333—193 [29/25.35; 438/14; 438/17; 257/414] | 17 Claims |
| 1. A method of manufacturing a surface acoustic wave device formed in one chip and including over a semiconductor substrate
at least an IC region and a surface acoustic wave element region that are horizontally disposed, the method comprising:
forming in the IC region over the semiconductor substrate a semiconductor element layer that includes a semiconductor element
and an insulation layer covering the semiconductor element and being deposited also in the surface acoustic wave element region;
forming over the semiconductor element layer a wire layer that includes a plurality of wires coupled to the semiconductor
element and a wire insulating film deposited over the plurality of wires to provide insulation among the wires, the wire insulating
film being deposited also over the insulation layer in the surface acoustic wave element region;
forming an interlayer insulating film having a flattened surface on the wire insulating film in the IC region and the surface
acoustic wave element region;
forming a piezoelectric thin film on the interlayer insulating film; and
forming a surface acoustic wave element on the piezoelectric thin film in the surface acoustic wave element region.
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