| US 7,422,633 B2 | ||
| Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate | ||
| Robert Dwilinski, Warsaw (Poland); Roman Doradzinski, Warsaw (Poland); Jerzy Garczynski, Lomianki (Poland); Leszek Sierzputowski, Union, N.J. (US); and Yasuo Kanbara, Anan (Japan) | ||
| Assigned to Ammono SP. ZO. O., Warsaw (Poland); and Nichia Corporation, Anan-shi, Tokushima (Japan) | ||
| Appl. No. 10/479,857 PCT Filed Jun. 06, 2002, PCT No. PCT/JP02/05626 § 371(c)(1), (2), (4) Date Jun. 09, 2004, PCT Pub. No. WO02/101126, PCT Pub. Date Dec. 19, 2002. |
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| Claims priority of application No. 347918 (PL), filed on Jun. 06, 2001; and application No. 350375 (PL), filed on Oct. 26, 2001. | ||
| Prior Publication US 2004/0255840 A1, Dec. 23, 2004 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. C30B 9/00 (2006.01) | ||
| U.S. Cl. 117—68 [117/69; 117/70; 117/77; 117/78; 117/73; 117/74; 117/76; 117/952] | 19 Claims |
| 1. A process for obtaining a bulk monocrystalline gallium-containing nitride on the surface of heterogeneous substrate, comprising
the steps of:
forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave;
dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the
feedstock is dissolved; and
crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant
of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature
and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent.
|