US 7,374,615 B2
	Method and equipment for manufacturing aluminum nitride bulk single crystal
Robert Dwilinski, Warsaw (Poland); Roman Doradzinski, Warsaw (Poland); Jerzy Garczynski, Lomianki (Poland); Leszek Sierzputowski, Union, N.J. (US); and Yasuo Kanbara, Anan (Japan)
Assigned to Ammono.SP.ZO.O, Warsaw (Poland); and Nichia Corporation, Anan-shi, Tokushima (Japan)
Appl. No. 10/479,858 PCT Filed Jun. 06, 2002, PCT No. PCT/JP02/05624 § 371(c)(1), (2), (4) Date Aug. 31, 2004, PCT Pub. No. WO02/101124, PCT Pub. Date Dec. 19, 2002.
Claims priority of application No. 347918 (PL), filed on Jun. 06, 2001.
Prior Publication US 2005/0087124 A1, Apr. 28, 2005
Int. Cl. C30B 7/10 (2006.01)

U.S. Cl. 117—68  [117/69; 117/70; 117/73]

32 Claims

1. A process for preparing a bulk monocrystalline aluminum nitride, comprising the steps of forming a supercritical ammonia solvent containing ions of an alkali metal in an autoclave; dissolving an aluminum-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved; and crystallizing aluminum nitride on the face of a crystallization seed from the supercritical solution, under a condition of a higher temperature than the temperature found when the feedstock is dissolved in the supercritical solvent.