| US 7,476,917 B2 | ||
| Phase-changeable memory devices including nitrogen and/or silicon dopants | ||
| Horii Hideki, Seoul (Korea, Republic of); Bong-Jin Kuh, Gyeonggi-do (Korea, Republic of); Yong-Ho Ha, Gyeonggi-do (Korea, Republic of); Jeong-hee Park, Gyeonggi-do (Korea, Republic of); and Ji-Hye Yi, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on May 30, 2007, as Appl. No. 11/755,307. | ||
| Application 11/755307 is a continuation of application No. 10/910945, filed on Aug. 04, 2004, granted, now 7,402,851. | ||
| Application 10/910945 is a continuation in part of application No. 10/781597, filed on Feb. 18, 2004, granted, now 7,115,927. | ||
| Claims priority of application No. 10-2004-0012358 (KR), filed on Feb. 24, 2004. | ||
| Prior Publication US 2007/0221906 A1, Sep. 27, 2007 | ||
| Int. Cl. H01L 27/148 (2006.01); H01L 29/768 (2006.01) | ||
| U.S. Cl. 257—246 [257/247; 257/248; 257/249] | 12 Claims |
| 1. A phase-changeable memory device, comprising:
a substrate;
an electrode on said substrate; and
a phase-changeable material electrically coupled to said electrode, said phase-changeable material comprising a chalcogenide
composition containing germanium, bismuth, tellurium and nitrogen having a concentration in a range from about 0.25 atomic
percent to about 25 atomic percent.
|