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DOI	10.2172/821306
Title	In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption
Creator/Author	C.J. Vineis ; C.A. Wang ; K.F. Jensen
Publication Date	2000 Aug 21
OSTI Identifier	OSTI ID: 821306
Report Number(s)	LM-00K070
DOE Contract Number	AC12-00SN39357
DOI	10.2172/821306
Other Number(s)	TRN: US200409%%125
Resource Type	Technical Report
Resource Relation	Other Information: PBD: 21 Aug 2000
Coverage	Topical
Research Org	Lockheed Martin Corporation, Schenectady, NY 12301 (US)
Sponsoring Org	US Department of Energy (US)
Subject	10 SYNTHETIC FUELS; 42 ENGINEERING; ATOMIC FORCE MICROSCOPY; CHEMISTRY; DESORPTION; METHANOL; MONITORING; MONITORS; OXIDES; RECOMMENDATIONS; SOLVENTS; SUBSTRATES; THICKNESS; VAPOR PHASE EPITAXY; WATER
Description/Abstract	The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HCL was used as the etchant, and in certain cases was followed by an additional etch in Br{sub 2}-HCl-HNO{sub 3}-CH{sub 3}COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 C. Features observed in the in-situ reflectance associated with the oxide desorption process were interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and ex-situ atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.
Country of Publication	United States
Language	English
Format	Size: 657 Kilobytes pages
Availability	OSTI as DE00821306 To purchase this media from NTIS, click here
System Entry Date	2007 Apr 16
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