| US 7,368,876 B2 | ||
| Plasma processing apparatus | ||
| Toshihiro Hayami, Nirasaki (Japan); Etsuji Ito, Nirasaki (Japan); and Itsuko Sakai, Yokohama (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan); and Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 27, 2004, as Appl. No. 10/854,142. | ||
| Application 10/854142 is a continuation of application No. PCT/JP02/12303, filed on Nov. 26, 2002. | ||
| Claims priority of application No. 2001-361297 (JP), filed on Nov. 27, 2001. | ||
| Prior Publication US 2005/0011452 A1, Jan. 20, 2005 | ||
| Int. Cl. H01J 7/24 (2006.01) | ||
| U.S. Cl. 315—111.21 [315/111.11] | 11 Claims |
| 1. A plasma processing apparatus comprising:
a processing chamber in which objects to be processed are processed;
power supply means for supplying RF power to said processing chamber;
exhausting means for evacuating an interior of said processing chamber to a predetermined reduced pressure state; and
processing gas introducing means for introducing a processing gas into said processing chamber, the plasma processing apparatus
forming an RF electric field inside said processing chamber through the supplied RF power, and thus converting the introduced
processing gas into a plasma, and carrying out plasma processing;
wherein said power supply means comprises:
a matching unit that is connected to said processing chamber via a transmission path along which the RF power is transmitted
to said processing chamber, and that matches an impedance of said transmission path to an impedance of the processing gas
that has been converted into the plasma;
an RF amplifier that is connected to said matching unit and that is disposed in a position close to said matching unit; and
a DC amplifier that is connected to said RF amplifier and that is installed in a utility section other than a clean room housing
said processing chamber, said matching unit and said RF amplifier; and
wherein said DC amplifier is connected to said RF amplifier via an ordinary cable.
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