Materials challenges for CMOS beyond the wall
Oxide extension, high-k selection
- Interface reactions, interface structure, g(r, z)
- Charge/field distributions, interface charge accumulation
- Thickness control (plasma nitride), crystallinity, crystallisation kinetics
- Structure control, composition, depth-distribution
Gate metal selection
- Thin-film morphology control, suppression of phase changes in ultra-thin films, interfacial reactions
Interconnect development
- Liner materials: grain structures/ GB porosity, Cu segregation/diffusion
- Low-k dielectric voiding, Cu solubility
- New low-T multilayer solder
Doping control
- Damage annealing processes, Phase/structure determinations
- Point defect clusters, Point defect injection processes
- Growth processes, defect nucleation
Substrate development for FD-SOI
- New metrology tools/techniques, low-Si-consumption cleans