| US 7,352,002 B2 | ||
| Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same | ||
| Yoshinobu Kimura, Yokohama (Japan); Masakiyo Matsumura, Yokohama (Japan); Yoshitaka Yamamoto, Yokohama (Japan); Mikihiko Nishitani, Yokohama (Japan); Masato Hiramatsu, Yokohama (Japan); Masayuki Jyumonji, Yokohama (Japan); and Fumiki Nakano, Yokohama (Japan) | ||
| Assigned to Advanced LCD Technologies Development Center Co., Ltd., Yokohama-shi (Japan) | ||
| Filed on Apr. 14, 2006, as Appl. No. 11/403,938. | ||
| Application 11/403938 is a division of application No. 10/755303, filed on Jan. 13, 2004, granted, now 7,087,505. | ||
| Application 10/755303 is a continuation of application No. PCT/JP03/04717, filed on Apr. 14, 2003. | ||
| Claims priority of application No. 2002-112215 (JP), filed on Apr. 15, 2002. | ||
| Prior Publication US 2006/0197093 A1, Sep. 07, 2006 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—49 [257/66; 257/E29.117; 257/E29.137; 345/90; 438/166; 438/486] | 16 Claims |
| 1. A thin-film semiconductor device substrate comprising:
a base layer; and
a semiconductor thin film formed on the base layer,
the semiconductor thin film comprising: a plurality of unit regions uniformly arranged in a matrix of rows and columns, each
unit region including at least one first region and at least one second region and which are disposed adjacent to each other
within said unit region and in which the first region is different from the second region in crystallinity, the at least one
first region and the at least one second region of the semiconductor thin film having a same thickness.
|