Energy Citations Database

Bibliographic Citation

 
Document
For copies of Journal Articles, please contact the Publisher or your local public or university library and refer to the information in the Resource Relation field.
For copies of other documents, please see the Availability, Publisher, Research Organization, Resource Relation and/or Author (affiliation information) fields and/or Document Availability.
Title Influence of substrate heating and thermal anneling on the surface crystallinity in single Si crystals implanted with high doses of /sup 16/O
Creator/Author Sjoreen, T.P. ; Holland, O.W. ; Fathy, D. ; More, K. ; Davis, R.F.
Publication Date1984 Nov 01
OSTI IdentifierOSTI ID: 6255432; DE85005264
Report Number(s)CONF-841117-36
DOE Contract NumberAC05-84OR21400
Resource TypeConference
Specific TypeTechnical Report
Resource Relation8. conference on the application of accelerators in research and industry; 12 Nov 1984; Denton, TX, USA
Research OrgOak Ridge National Lab., TN (USA); Microelectronics Center of North Carolina, Research Triangle Park (USA); North Carolina State Univ., Raleigh (USA)
Subject360605 -- Materials-- Radiation Effects ;360102 -- Metals & Alloys-- Structure & Phase Studies; SILICON-- ANNEALING;SILICON-- ION IMPLANTATION;SILICON-- MICROSTRUCTURE; DAMAGE;EXPERIMENTAL DATA;OXYGEN IONS;RUTHERFORD SCATTERING;TRANSMISSION ELECTRON MICROSCOPY
Related SubjectCHARGED PARTICLES;CRYSTAL STRUCTURE;DATA;ELASTIC SCATTERING;ELECTRON MICROSCOPY;ELEMENTS;HEAT TREATMENTS;INFORMATION;IONS;MICROSCOPY;NUMERICAL DATA;SCATTERING;SEMIMETALS
Description/Abstract The dependence of near-surface crystallinity on substrate heating during high dose O/sup +/ implantation into Si and post implantation annealing was studied.^It is shown that the damage morphology in the crystalline region above the SiO/sub 2/ layer is very sensitive to substrate temperature and that, under optimum implant conditions which minimize damage conditons in the near surface, annealing does not improve the near surface crystallinity.^Rutherford backscattering/channeling spectroscopy and cross-sectional transmission electron microscopy were used to analyze the microstructure of the samples.^8 references, 5 figures.
Country of PublicationUnited States
LanguageEnglish
FormatPages: 16
AvailabilityNTIS, PC A02/MF A01.
System Entry Date2001 May 13

Top