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| Title: |
Strained layer InP/InGaAs quantum well laser
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| Author(s): |
NONE
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| Abstract: |
Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.
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| NASA Center: |
NASA (non Center Specific)
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| Publication Date: |
October 26, 1993
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| Document Source: |
CASI |
| Online Source: |
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| Document ID: |
20080005944
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| Publication Information: |
Number of Pages = 7 |
| Document Patent Information: |
US-PATENT-5,257,276: April 3, 1992 |
| Price Code: |
A02 |
| Keywords: |
INDIUM GALLIUM ARSENIDES; INDIUM PHOSPHIDES; QUANTUM WELL LASERS; PATENTS;
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| Accessibility: |
Unclassified; No Copyright; Unlimited; Publicly available; |
| Updated/Added to NTRS: |
2008-02-01 |
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