an nMIS transistor including:

a first gate insulating film which is formed on a semiconductor substrate;

a first gate electrode formed on the first gate insulating film and including a first electrically conductive oxide film where a work function φm (eV) is in a range of 3.65≤φm≤4.45, the first electrically conductive oxide film comprising a Perovskite structure type oxide represented by ABO₃ or a Perovskite structure type oxynitride represented by ABON, where A is at least one element selected from an A1 or A2 group and B is at least one element selected from a B1 or B2 group, the A1 group being alkaline earth metals and rare earth metals, the A2 group being La and Y, the B1 group being Ti, Zr, Hf, and Ce, the B2 group being Ta, Nb, and V, and the first electrically conductive oxide film including at least one element selected from the A2 group or the B2 group; and

first source-drain regions formed on the semiconductor substrate on both sides of the first gate electrode; and

a pMIS transistor including:

a second gate insulating film formed on the semiconductor substrate;

a second gate electrode formed on the second gate insulating film and including a second electrically conductive oxide film where a work function φm (eV) is in a range of 4.77≤φm≤5.57, the second electrically conductive oxide film comprising a Perovskite structure type oxide of CDO₃ or a Perovskite structure type oxynitride represented by CDON, where C is at least one element selected from a C1 or C2 group and D is at least one element selected from a D1 or D2 group, the C1 group being alkaline earth metals and rare earth metals, the C2 group being La and Y, the D1 group being Ti, Zr, Hf, and Ce, the D2 group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni; and

second source-drain regions formed on the semiconductor substrate on both sides of the second gate electrode.