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Title High temperature superconductivity. Annual report for period ending 30 June 1989
Creator/Author Eckstein, J.N.
Publication Date1989 Jun 30
OSTI IdentifierOSTI ID: 7108903
Report Number(s)AD-A-215491/2/XAB
Resource TypeTechnical Report
Specific TypeProgress Report
Research OrgVarian Associates, Inc., Palo Alto, CA (USA). Varian Research Center
Subject360201 -- Ceramics, Cermets, & Refractories-- Preparation & Fabrication ;360204 -- Ceramics, Cermets, & Refractories-- Physical Properties; BISMUTH OXIDES-- MOLECULAR BEAM EPITAXY;BISMUTH OXIDES-- SUPERCONDUCTIVITY;SUPERCONDUCTING FILMS-- MOLECULAR BEAM EPITAXY; CRITICAL CURRENT;CURRENT DENSITY;ELECTRONIC EQUIPMENT;EPITAXY;EVAPORATION;LAYERS;LOW TEMPERATURE;OPTIMIZATION;OXYGEN;OZONE;PERFORMANCE;PROGRESS REPORT;SUPERCONDUCTORS;TRANSITION TEMPERATURE;USES;X-RAY DIFFRACTION
Related SubjectBISMUTH COMPOUNDS;CHALCOGENIDES;COHERENT SCATTERING;CURRENTS;DIFFRACTION;DOCUMENT TYPES;ELECTRIC CONDUCTIVITY;ELECTRIC CURRENTS;ELECTRICAL PROPERTIES;ELEMENTS;EPITAXY;EQUIPMENT;FILMS;NONMETALS;OXIDES;OXYGEN COMPOUNDS;PHASE TRANSFORMATIONS;PHYSICAL PROPERTIES;SCATTERING;THERMODYNAMIC PROPERTIES
Description/Abstract The overall goals of this program are to develop the technology of MBE growth of HTSC material, to optimize the performance of HTSC films with high transition temperatures and critical current densities, and to explore the development of electronic devices based on such material.^In-situ growth of (BiO)2-containing HTSC material was obtained.^Attempts are being made to perfect the process in order to improve the superconducting properties of the films.^(BiO)2 containing layered superconducting films grown in-situ at low temperature were obtained without any post-growth anneal.^This result was obtained recently on two films grown under nominally identical conditions using ozone as a source of active oxygen.^To our knowledge, these are the first films from the (BiO)2 family grown in-situ by an evaporative technique, and the first such films grown in-situ by any technique in the U.S.^The films were grown on SiTiO3 by atomic layer epitaxy (ALE) and exhibited a streaky RHEED pattern throughout growth, indicating the heteroepitaxy of a single-crystal-like and atomically smooth layer.^X-ray diffraction analysis revealed the films to be completely aligned, as layered by the beam-shuttering sequence, and nearly single phase.
Country of PublicationUnited States
LanguageEnglish
FormatPages: (7 p)
AvailabilityNTIS, PC A02/MF A01
System Entry Date2001 May 13

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