Curt A. Richter
Curt A. Richter, Ph.D. has worked in the Semiconductor Electronics Division of the National Institute of Standards and Technology, Gaithersburg, MD since 1993. He is currently Project Leader of the Nanoelectronic Device Metrology Project. This project is currently developing measurement science infrastructure for post-CMOS technologies (such as molecular electronics, confined-Si electronics, and organic electronics) that show promise to extend traditional scaling laws for increased computational performance beyond the limits of conventional CMOS.
Dr. Richter was born in Roanoke, VA in 1965. He received his B.S. degree from The College of William and Mary, Williamsburg, VA and the M.S., M.Phil., and Ph.D. degrees in Applied Physics from Yale University, New Haven, CT. After matriculation from Yale, Dr. Richter joined NIST. He has investigated the quantum properties of low-dimensional systems and has experience studying mesoscopic physics and quantum interference effects in semiconductor devices by using magnetotransport measurements. During much of Richter's tenure at NIST he has been studying the physical properties of gate dielectric materials for Si CMOS technology, with an emphasis on interface roughness and accurate measurements of ultrathin-film thickness. In addition to his current technical research on molecular electronics, Richter is a recognized leader in the field of electrical and optical characterization of gate dielectric materials. Richter is an author of more than 45 technical articles and editor of one book.
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