Bibliographic Citation
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Title | Photosensitivity enhancement of PLZT ceramics by positive ion implantation |
Creator/Author | Peercy, P.S. ; Land, C.E. |
Publication Date | 1980 Jun 13 |
OSTI Identifier | OSTI ID: 6575363 |
DOE Contract Number | AT(29-1)-789 |
Resource Type | Patent |
Subject | 656000 -- Condensed Matter Physics ;360601 -- Other Materials-- Preparation & Manufacture; ;LANTHANUM COMPOUNDS-- ION IMPLANTATION;LANTHANUM COMPOUNDS-- PHOTOSENSITIVITY;LEAD COMPOUNDS-- ION IMPLANTATION;LEAD COMPOUNDS-- PHOTOSENSITIVITY;TITANATES-- ION IMPLANTATION;TITANATES-- PHOTOSENSITIVITY;ZIRCONATES-- ION IMPLANTATION;ZIRCONATES-- PHOTOSENSITIVITY; ARGON IONS;CERAMICS;FABRICATION;HELIUM IONS;HYDROGEN IONS;KEV RANGE 100-1000;NEON IONS |
Related Subject | CHARGED PARTICLES;ENERGY RANGE;IONS;KEV RANGE;OXYGEN COMPOUNDS;RARE EARTH COMPOUNDS;SENSITIVITY;TITANIUM COMPOUNDS;TRANSITION ELEMENT COMPOUNDS;ZIRCONIUM COMPOUNDS |
Description/Abstract | The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface.^Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/.^The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light.^As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources.^The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image.^The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%.^The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate.^Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV. |
Country of Publication | United States |
Language | English |
Format | Pages: 21 |
Availability | NTIS, PC A02/MF A01. |
Rights | Dept. of Energy |
System Entry Date | 2001 May 13 |
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