US 7,331,092 B2 | ||
Method and manufacturing surface acoustic wave device | ||
Michio Miura, Kawasaki (Japan); Takashi Matsuda, Kawasaki (Japan); Yoshio Satoh, Kawasaki (Japan); Masanori Ueda, Yokohama (Japan); and Hideki Takagi, Tsukuba (Japan) | ||
Assigned to Fujitsu Media Devices Limited, Yokohama (Japan); Fujitsu Limited, Kawasaki (Japan); and National Institute of Advanced Industrial Science and Technology, Tokyo (Japan) | ||
Filed on Mar. 23, 2004, as Appl. No. 10/806,148. | ||
Claims priority of application No. 2003-136511 (JP), filed on May 14, 2003. | ||
Prior Publication US 2004/0226162 A1, Nov. 18, 2004 | ||
Int. Cl. H04R 17/10 (2006.01) |
U.S. Cl. 29—25.35 [29/594; 29/830; 204/192.18; 310/313 R; 310/313 B; 310/322] | 3 Claims |
1. A method of manufacturing a surface acoustic wave device that has a surface acoustic wave filter including comb-shaped
electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate
and a supporting substrate to each other,
the method comprising the steps of:
activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and
joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face
each other, wherein:
the activating step includes the step of carrying out an activation process using one of ion beams, neutralized high-energy
atom beams, or plasma of inert gas, or oxygen, on at least one of the joining surfaces of the piezoelectric substrate and
the supporting substrate;
the joining step includes the step of directly joining the piezoelectric substrate and the supporting substrate at room temperature;
the piezoelectric substrate is a lithium tantalite, or a lithium niobate piezoelectric single-crystal substrate, that is a
rotated Y-cut plate having a surface acoustic wave propagation direction X; and
the supporting substrate is a single-crystal substrate containing sapphire as a main component, or a ceramic substrate containing
aluminum oxide, aluminum nitride or silicon nitride as a main component.
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