NIST Technicalendar Single Item Display: Meeting at NIST Item ID: 030334Vladi0.475645940069

12/5/08 10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Luminescence optimization from silicon nanocrystal sensitized erbium in stratified multilayered films

Erbium (Er) photoemission at the telecommunication wavelengths is found to be enhanced markedly by energy transfer from silicon nanocrystals (nc-Si) placed in close proximity of Er atoms. It is thus of great interest to fully understand the photoemission mechanism of nc-Si sensitized Er atoms and develop an optimal fabrication process and sample structures that would maximize the optical gain. Of particular interest is stratified multilayer film consisting of alternating polycrystalline Si and Er-doped Si oxide/nitride layers because of its simple fabrication process. Three related topics will be discussed for this endeavor. First, the dielectric constant of Si nanodots and nanoslabs was predicted to decrease as their size decreases, which was verified by variable angle spectroscopic ellipsometry, agreeing very well with the surface polarization effect theory. Second, simulations for multilayer films showed a large form birefringence and as much as 87% of power confinement in the low-index oxide layers for TM polarized Er light. The simulations were experimentally verified by prism coupler technique. Third, a lateral electrical injection scheme in multilayer films was devised and its preliminary results will be discussed.

Han Yoo , Department of Physics and Astronomy, University of Rochester, .

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