| US 7,345,812 B2 | ||
| Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications | ||
| Rongqing Hui, Lenexa, Kans. (US); Hong-Xing Jiang, Manhattan, Kans. (US); and Jing-Yu Lin, Manhattan, Kans. (US) | ||
| Assigned to University of Kansas, Lawrence, Kans. (US) | ||
| Filed on Feb. 20, 2004, as Appl. No. 10/783,972. | ||
| Claims priority of provisional application 60/453636, filed on Mar. 10, 2003. | ||
| Claims priority of provisional application 60/449228, filed on Feb. 21, 2003. | ||
| Prior Publication US 2004/0218259 A1, Nov. 04, 2004 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 359—344 [385/8; 385/40; 438/31; 438/604] | 32 Claims |
| 12. An optical device, comprising:
an optical wavcguide device fabricated using an erbium-doped III-nitride semiconductor material including erbium-doped GaN,
the optical waveguide device comprising:
an erbium-doped GaN/GaN alloy heterostructure including a waveguide core made of erbium-doped GaN and a substrate made of
an erbium-doped GaN alloy including erbium-doped GaN and erbium-doped InAlN (erbium-doped InAlGaN);
an electrode connected to the optical waveguide device for carrier injection;
input and output ends; and
a wavelength selective coating applied to the input and output ends, wherein the waveguide selective coating is adapted to
provide for low reflection of light in the 1550 nm wavelength region, and high reflection of light in the shorter wavelength
region.
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