| US 7,342,710 B2 | ||
| Mems switch and method of fabricating the same | ||
| Che-heung Kim, Yongin-si (Korea, Republic of); Hyung-jae Shin, Seongnam-si (Korea, Republic of); Soon-cheol Kweon, Seoul (Korea, Republic of); Kyu-sik Kim, Suwon-si (Korea, Republic of); and Sang-hun Lee, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
| Filed on May 30, 2007, as Appl. No. 11/806,143. | ||
| Application 11/806143 is a division of application No. 11/258196, filed on Oct. 26, 2005, granted, now 7,251,069. | ||
| Claims priority of application No. 2004-107858 (KR), filed on Dec. 17, 2004. | ||
| Prior Publication US 2007/0227863 A1, Oct. 04, 2007 | ||
| Int. Cl. G02B 26/00 (2006.01); H01L 21/00 (2006.01) | ||
| U.S. Cl. 359—290 [438/52] | 11 Claims |
| 1. A method of fabricating a micro electro mechanical system switch, comprising:
depositing a metal layer on a substrate and patterning signal lines comprising switching contact points and immovable electrodes;
depositing a sacrificial layer on the signal lines and the immovable electrodes;
depositing a second sacrificial on the first sacrificial layer and forming contacting member holes in positions facing the
switching contact points;
depositing a contacting member layer on the second sacrificial layer and leaving portions of the contacting member layer buried
in the contacting member holes to pattern contacting members;
depositing an actuating member layer on an upper surface of the contacting member layer on which the contacting members are
formed and patterning inner and outer actuating members;
depositing a third sacrificial layer on the second sacrificial layer on which the inner and outer actuating members are formed
and patterning gap forming parts forming gaps of pushing rods;
depositing a fourth sacrificial layer on the third sacrificial layer and patterning pushing rod support holes;
depositing a pushing rod layer on the fourth sacrificial layer and patterning the pushing rods; and
removing the first, second, third, and fourth sacrificial layers.
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