Bibliographic Citation
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DOI | http://dx.doi.org/10.1063/1.117225 |
Title | Structural and mechanical properties of (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} films synthesized by dual-ion-beam deposition |
Creator/Author | Ong, C.W. ; Zhao, X. ; Ng, Y.M. ; Chan, K.F. ; Tsang, T.C. ; Choy, C.L. ; Chan, P.W. [Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)] |
Publication Date | 1996 Dec 01 |
OSTI Identifier | OSTI ID: 397399 |
Other Number(s) | APPLAB; ISSN 0003-6951 |
Resource Type | Journal Article |
Resource Relation | Applied Physics Letters ; VOL. 69 ; ISSUE: 23 ; PBD: Dec 1996 |
Subject | 36 MATERIALS SCIENCE ; BORON NITRIDES; MECHANICAL PROPERTIES; SILICON NITRIDES; ENERGY BEAM DEPOSITION FILMS; ION BEAMS; HARDNESS; STRESSES; STRUCTURAL CHEMICAL ANALYSIS; PHOTOELECTRON SPECTROSCOPY; ADHESION |
Description/Abstract | The structural and mechanical properties of ion-beam deposited (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} films (0{le}{ital x}{le}0.5) were characterized by x-ray photoelectron spectroscopy, infrared absorption experiments, and nanoindentation tests. A single-layer BN film ({ital x}=0) has 70 vol.{percent} in cubic phase ({ital c}-BN), and a hardness of 38 GPa. However, it peeled off very soon after deposition due to the high internal stress. If a buffer layer was deposited first, followed by a (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} film with{ital x}{approx_equal}0.013, the whole configuration adhered very firmly to both quartz and silicon substrates. This improvement in adhesion was probably due to the formation of Si{endash}N bonds, which served to release partly the stress inside the (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} films. Since the Si content was low, the film structure remained highly cubic, and there was no observable drop in hardness. For higher{ital x}, the cubic structure in (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} films disappeared rapidly and was replaced by a hexagonal structure. This structural change led to a rapid drop in hardness from 38 to 12 GPa. As{ital x} was further increased, more Si{endash}N bonds were formed in the (B{sub 0.5{minus}{ital x}}Si{sub{ital x}})N{sub 0.5} layers. As a result, the hardness increased from the minimum value to a value{approx_equal}24 GPa.{copyright}{ital 1996 American Institute of Physics.} |
Country of Publication | United States |
Language | English |
Format | pp. 3501-3503 ; PL: |
System Entry Date | 2001 May 05 |
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