| US 7,488,385 B2 | ||
| Method for epitaxial growth of a gallium nitride film separated from its substrate | ||
| Hacène Lahreche, Paris (France); Gilles Nataf, Golfe Juan (France); and Bernard Beaumont, Valbonne (France) | ||
| Assigned to Lumilog, Vallauris (France) | ||
| Appl. No. 10/516,358 PCT Filed May 28, 2003, PCT No. PCT/FR03/01615 § 371(c)(1), (2), (4) Date Nov. 24, 2004, PCT Pub. No. WO03/100839, PCT Pub. Date Dec. 04, 2003. |
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| Claims priority of application No. 02 06486 (FR), filed on May 28, 2002. | ||
| Prior Publication US 2005/0217565 A1, Oct. 06, 2005 | ||
| Int. Cl. C30B 25/02 (2006.01) | ||
| U.S. Cl. 117—84 [117/88; 117/91; 117/94; 117/95; 117/99; 117/915; 117/952] | 15 Claims |
| 1. A method of producing a self-supported film of gallium nitride (GaN) using a substrate, by deposition of GaN by epitaxy,
the method comprising the following successive steps:
(i) depositing a layer of GaN on a substrate by vapour or liquid phase epitaxy,
(ii) a weakening ion implantation step so as to create a weak area in the layer of GaN deposited during the previous step,
(iii) a step of reworking by epitaxial lateral overgrowth (ELO) in order to form a new layer of GaN, and
(iv) a spontaneous separation step at the weak area to obtain the self-supported film of gallium nitride, wherein the spontaneous
separation at the weak area is implemented by return to ambient temperature after the resumption of epitaxy.
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