US 7,334,070 B2 | ||
Multi-channel memory architecture for daisy chained arrangements of nodes with bridging between memory channels | ||
John Michael Borkenhagen, Rochester, Minn. (US) | ||
Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
Filed on Oct. 29, 2004, as Appl. No. 10/977,770. | ||
Prior Publication US 2006/0095592 A1, May 04, 2006 | ||
Int. Cl. G06F 13/00 (2006.01); G06F 15/16 (2006.01); H04J 1/16 (2006.01) |
U.S. Cl. 710—100 [709/251; 370/221; 370/222; 370/223; 370/224] | 30 Claims |
1. An apparatus, comprising:
a memory controller including first and second memory ports respectively configured to drive first and second Fully Buffered
Dual Inline Memory Module (FB-DIMM) memory channels, wherein each FB-DIMM memory channel comprises a unidirectional serial
read channel and a unidirectional serial write channel respectively configured to communicate read and write data, wherein
the first memory port in the memory controller includes a pair of unidirectional serial read and write ports respectively
configured to couple to the unidirectional serial read and write channels of the first FB-DLMM memory channel, and wherein
the second memory port in the memory controller includes a pair of unidirectional serial read and write ports respectively
configured to couple to the unidirectional serial read and write channels of the second FB-DIMM memory channel;
a first plurality of FB-DIMM memory modules coupled to the unidirectional serial read and write channels of the first memory
channel of the memory controller in a first daisy chain arrangement, each FB-DIMM memory module in the first plurality of
FB-DIMM memory modules including a buffer device and a plurality of DRAM devices, and a last FB-DIMM memory module among the
first plurality of FB-DIMM memory modules being disposed at an opposite end of the first daisy chain arrangement from the
memory controller;
a second plurality of Fully Buffered Dual Inline Memory Module (FB-DIMM) memory modules coupled to the unidirectional serial
read and write channels of the second memory channel of the memory controller in a second daisy chain arrangement, each FB-DIMM
memory module in the second plurality of FB-DIMM memory modules including a buffer device and a plurality of DRAM devices,
and a last FB-DRAM memory module among the second plurality of FB-DRAM memory modules being disposed at an opposite end of
the second daisy chain arrangement from the memory controller; and
a bridging interconnect coupling together the last FB-DIMM memory modules from the first and second pluralities of FB-DIMM
memory modules to enable data to be communicated over one of the first and second memory channels between the memory controller
and a FB-DIMM memory module coupled to the other of the first and second memory channels, wherein the bridging interconnect
comprises first and second unidirectional interconnects, the first unidirectional interconnect coupling the read channel of
the first FB-DIMM memory channel to the write channel of the second FB-DIMM memory channel, and the second unidirectional
interconnect coupling the write channel of the first FB-DIMM memory channel to the read channel of the second FB-DIMM memory
channel.
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