| US 7,365,358 B2 | ||
| Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device | ||
| Junichi Sato, Tokyo (Japan); Setsuo Usui, Kanagawa (Japan); Yasuhiro Sakamoto, Kanagawa (Japan); Yoshifumi Mori, Chiba (Japan); and Hideharu Nakajima, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Apr. 21, 2004, as Appl. No. 10/828,882. | ||
| Application 10/828882 is a division of application No. 09/946898, filed on Sep. 05, 2001, granted, now 6,746,942. | ||
| Claims priority of application No. P2000-269261 (JP), filed on Sep. 05, 2000; application No. P2000-269274 (JP), filed on Sep. 05, 2000; application No. P2000-269298 (JP), filed on Sep. 05, 2000; and application No. P2001-244163 (JP), filed on Aug. 10, 2001. | ||
| Prior Publication US 2005/0104125 A1, May 19, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 257—19 [257/64; 438/586] | 12 Claims |
| 1. A semiconductor thin film comprising:
an insulating base; and
a single crystal thin film having micro-projections formed on said insulating base by heat treating a polycrystalline thin
film formed by heat treating an amorphous semiconductor thin film, said polycrystalline thin film having polycrystalline grains
aligned in a generally regular pattern forming initial micro-projections by uplift of a boundary portion among at least three
of said polycrystalline grains, at least a portion of said micro-projections of said single crystal thin film being comprised
of the initial micro-projections.
|