US 7,365,015 B2
	Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material
Hong Lin, Vancouver, Wash. (US); Wai Lo, Lake Oswego, Oreg. (US); Sey-Shing Sun, Portland, Oreg. (US); and Richard Carter, Fairview, Oreg. (US)
Assigned to LSI Logic Corporation, Milpitas, Calif. (US)
Filed on Jul. 13, 2004, as Appl. No. 10/889,901.
Prior Publication US 2006/0011994 A1, Jan. 19, 2006
Int. Cl. H01L 29/76 (2006.01)

U.S. Cl. 438—701  [438/713; 438/211; 438/257; 438/259; 438/592; 257/407]

14 Claims

1. A method of forming a metal gate on a substrate comprising: removing a plurality of layers of material from on top of the substrate between a liner which has sidewalls, thereby forming a groove which has a tapered profile wherein the liner has sidewalls which are parallel to each other at a top of the groove and wherein the sidewalls converge toward each other going to a base of the groove; depositing metal in the groove on the substrate, thereby forming said metal gate wherein the metal gate is in contact with the liner and has sidewalls which are parallel to each other in a top portion of the metal gate and which are in contact with the liner and which converge toward each other going to a base of the metal gate and which are in contact with the liner.