Bibliographic Citation
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DOI | http://dx.doi.org/10.1103/PhysRevLett.83.4864 |
Title | Effects of Pinning on the Flux Flow Hall Resistivity |
Creator/Author | Kopnin, N. B. [L. D. Landau Institute for Theoretical Physics, 117334 Moscow, Russia (Russian Federation) ; Argonne National Laboratory, Argonne, Illinois 60439 (United States)] ; Vinokur, V. M. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)] |
Publication Date | 1999 Dec 06 |
OSTI Identifier | OSTI ID: 20217995 |
Other Number(s) | Journal ID: ISSN 0031-9007; PRLTAO; TRN: US00Z3069 |
Resource Type | Journal Article |
Resource Relation | Journal: Physical Review Letters; Journal Volume: 83; Journal Issue: 23; Other Information: PBD: 6 Dec 1999 |
Research Org | Argonne National Laboratory (ANL), Argonne, IL |
Subject | 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; HIGH-TC SUPERCONDUCTORS; HALL EFFECT; MAGNETIC FLUX; SCALING; DOPED MATERIALS; VORTICES; CRYSTAL DEFECTS; THEORETICAL DATA |
Description/Abstract | We demonstrate that pinning strongly renormalizes both longitudinal and Hall resistivity in the flux flow regime. Using a simple model for the pinning potential we show that the magnitude of the vortex contribution to the Hall voltage decreases with increase in the pinning strength. The Hall resistivity {rho}{sub xy} scales as {rho}{sup 2}{sub xx} only for a weak pinning. On the contrary, a strong pinning breaks the scaling relation and can even result in a sign reversal of {rho}{sub xy} . (c) 1999 The American Physical Society. |
Country of Publication | United States |
Language | English |
Format | Size: page(s) 4864-4867 |
System Entry Date | 2008 Jul 28 |
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