Opportunity Data for Id = 420

ID Number420
Posting Close Date10/1/2008
NAICS334411
Procurement Description100 KV Focused Ion Beam (FIB) Nanoimplanter
Statement of WorkContractor shall provide a Focused Ion Beam (FIB) Nanoimplanter with the following specifications:

EQUIPMENT CHARACTERISTICS/SPECIFICATIONS:

A. ION SOURCES:
• Single element and alloy sources shall include Ga, Si, Be, and Au.
• Source preparation system shall be provided for a wide variety of additional elemental sources.
• System shall have a Reactive Gas Deposition/Etching system.

B. ACCELERATION VOLTAGE:
• Acceleration Voltage shall be 10 - 100 kV and shall be changeable in steps of 1.0 kV.

C. ION PROBE:
Diameter and current (Ga+) shall be 10 nm or less at 1 pA at 100 kV using room temperature Ga source (FEI made emitter can be used).
• Probe diameter stability: Long-term drift shall be less than 10%/hour.
• Probe current stability: Long-term drift shall be less than 10%/hour.
• Probe position stability: Long-term drift shall be less than 0.1μm/hour in position correction mode.
• Ga, Si, Be, and Au ions shall be demonstrated.

D. ION OPTICAL SYSTEM (IOS):
• Ion Gun:
1. Emitter protection unit shall be built in.
2. Conditioning switch shall be built in.
3. Accelerating voltage shall be 0 to 100 kV.
4. Extracting voltage shall be 0 to 12 kV.
5. Filament current shall be 0 to 3 A.
6. Emission control shall have two (2) modes of operation.
a) Constant ion emission current mode, or
b) Constant extracting voltage mode.
7. Emitter alignment shall be mechanical (X: 0.5 mm, Y: 0.5 mm) manually adjustable.
8. Insulating gas for accelerating tube shall be SF6 (user provided).
• Lens System:
1. Lens type shall be a Triple Focusing System.
2. Condenser lens one (CL1) shall be Electrostatic tetrode system control voltage: 0 to 12 kV.
3. Condenser lens two (CL2) shall be Electrostatic unipotential control voltage: 0 to 40 kV.
4. Objective lens (OL) shall be Electrostatic unipotential control voltage: 0 to 50 kV.
5. Aperture selectors for CL1 and CL2 shall be 20, 30, 60, 100 μm dia.
6. Aperture selectors for OL shall be 20, 30, 60, 100 μm dia.
7. Aperture adjustment shall be selectable size and adjustable position from control system.
8. Faraday cup shall be built in.
9. System shall have two (2) sets of electrostatic beam steering.
a) CL: between CL1 and CL2.
b) OL: over OL.
10. Stigmator shall be electrostatic 8 pole.
11. Scanning deflector shall be electrostatic type.
12. System shall have a Deflection amplifier, output voltage: 300 V.
13. Beam blankers shall be electrostatic type.
14. Mass filter shall be E x B type.
15. Mass resolution shall be delta m/m=6% .
16. Electrostatic field shall be 0 to 5 kV/cm
17. Magnetic field shall be 0 to 0.8 Tesla

E. ELECTRON BEAM SYSTEM:
• Electron Gun:
1. Electron Gun shall be a Schottky Emission type.
2. Acceleration voltage shall be 1 to 25 kV.
3. Resolution shall be 50 nm at 25 kV.
4. Emitter protection unit shall be built in.
5. Extracting voltage shall be 0 to 10 kV.
6. Filament current shall be 0 to 3 A.
7. Emitter alignment shall be mechanical (X: 0.5 mm, Y: 0.5 mm), manually adjustable.
• Electron Beam lens System:
1. Type shall be a double focusing system.
2. Condenser lens shall be electrostatic tetrode system with control voltage: 0 to 15 kV.
3. Objective lens (OL) shall be electrostatic unipotential with control voltage: 0 to 30 kV.
4. Aperture selectors for OL shall be 20, 30, 60, 100 μm dia.
5. Aperture adjustment shall be manually selectable (size) and adjustable (position) from outside of the chamber.
6. Faraday cup shall be built in (under the OL aperture).
7. Stigmator shall be electrostatic 8 pole.
8. Scanning deflector shall be prelens (OL) double deflection.
9. Beam blankers shall be electrostatic type.
10. System shall have a beam blanker secondary electron detector.

F. DETECTOR SYSTEM:
• Two Secondary Electron Detectors shall be scintillator and PMT (dual).
• Contrast control (amplification) shall be PMT voltage control.
• Brightness control shall be DC level control.
• HV power supply shall be 10 kV provided by vendor.

G. ACTIVE AND PASSIVE ANTI-VIBRATION SYSTEM
• Passive and active antivibration mechanics are employed to stabilize the work stage and the work chamber.


H. SCAN AND DISPLAY SYSTEM:
• View mode for electron and ion beams.
1. Image observation shall be Secondary electron images.
2. Monitor shall be PC, 19” Display.
3. Field of view 400 μm – 0.4 μm.
• Focused ion beam processing mode.
1. Composition shall be:
PC controlled system with high-speed pattern generator providing CAD for FIB pattern design,
FIB delineation control including distortion corrections.
2. Functions shall be:
CAD with wide variety of implemented shapes including Dots, lines, rectangles, trapezoids, triangles, parallelograms, arrays of any single shape, third order polynomials for
- pattern data creation,
- pattern data edition,
- batch processing data creation, and
- edition single user system and multi user system.
FIB control pattern delineation schedule employing fast pattern transfer of arrays between PC and deflection hardware.
Mark detection and automatic position correction.
Distortion measurement and correction.
Dynamic focus and stigmation.
Real time stage positional compensation.
Scanning gain and rotation compensation.
Stage position control.
3. Pattern drawing:
A high speed pattern generator shall allow the system to write FIB patterns at writing speeds up to 2 MHz. The beam position shall be controlled with 16 bit accuracy in the writing fields allowing the beam to be positioned to 1 nm precision.

4. Processing field size:
Coarse Mode shall be 200 μm x 200 μm.
Minimum addresssing unit shall be 4 nm / LSB (least significant
bit).
Fine Mode shall be 50 μm x 50 μm.
Minimum adressing unit shall be 1 nm / LSB.
DAC shall be16 bit (X, Y).
Patterning frequency shall be 10 kHz to 2 MHz adjustable in 1 kHz increments.

I. UHV WORK CHAMBERS AND STAGES:
• UHV lithography work chamber with a laser interferometer controlled precision work stage for up to four (4) inch diameter wafers for nanometer precision ion beam lithography and ion milling:
1. Material shall be iron Ni plated to provide low sensitivity to
electromagnetic noise. Fe for electromagnetic suppression
and Ni plated for improved vacuum.
2. Baking heater shall be provided.
3. Vaccum gauge shall be built in.
4. Air mount vibration isolator shall be built in.
5. Gate valve shall be 6" viton valve, pneumatic VAT.
6. Drawings of the UHV work chamber shall be supplied by the Vendor to allow Sandia to designate extra ports.
• Work piece stage for UHV lithography work chamber.
1. Stage movement shall be X: 0 to 100 mm Y: 0 to 100 mm.
2. Stage drive shall be by stepping motor.
3. Work piece size shall be up to 4 inch wafer.
4. Work piece holder shall have two (2) included (e.g. one for 4“ wafer and
one for small pieces).
5. Position determination shall be by laser interferometer system with
resolution of 0.2 nm.
6. Standard mark shall be built in.
7. Cross wire shall be built in.
8. Drive shall be by Pulse motor (1 micron/pulse).
9. Stage controller shall be local or remote (CPU).


J. WAFER POSITION EXCHANGING CHAMBER:
1. The wafer position shall have the capacity tobe exchanged from vertical to horizontal or vice versa.
2. Position exchange shall be manual.
3. Vacuum gauge shall be a nude type BA ion gauge.
4. Gate valve between the load lock and the Exchange chamber shall be Pneumatic 6" viton valve for UHV system.
5. Gate valve between the Exchange chamber and the Work chamber shall be Pneumatic 6" viton valve for UHV suitcase connection.
6. Pneumatic pumping line shall be provided to Turbo Molecular Pump with CF38 manual valve.

K. LOAD LOCK CHAMBER:
1. Allows introduction of up to 4” diameter wafers into the system.
2. Cassette system for up to ten (10) work pieces shall be provided.

L. EVACUATION SYSTEMS:
• Ultimate Pressures:
1. UHV Lithography work chamber shall be 3 x 10-7 Pa.
2. Ion Optical System (IOS) Gun chamber shall be 10-5 Pa.
3. Ion Optical System intermediate chamber shall be 10-5 Pa.
4. Wafer position changing chamber shall be 10-5 Pa.
5. Load lock chamber shall be 10-5 Pa.
• Vacuum gauges:
1. UHV Lithography work chamber shall have one BA gauge.
2. UHV in-situ reaction work chamber shall have one BA gauge.
3. IOS gun chamber shall have Static Ion Pump (SIP) power supply's current monitor.
4. IOS intermediate chamber shall have SIP power supply's current monitor.
5. Wafer position changing chamber shall have one BA gauge.
6. Load lock chamber shall have one BA gauge.
7. System shall have a VAC suitcase with one additional load lock and one BA gauge.
• Evacuation pumps:
1. UHV Lithography work chamber shall have a 500 L/S SIP, Ti sublimation
pump with LN2 trap,
2. Load lock chamber shall be 200 L/S Turbo Molecular Pump (TMP) and
260 L/Min Roughing Pump (RP).
3. IOS gun chamber shall be 30 L/S SIP.
4. IOS intermediate chamber shall be 30 L/S SIP.
5. Wafer position exchanging chamber shall be 140 L/S SIP
• Safety devices shall be:
1. Provided for vacuum failure, power failure and water failure.
2. All gate valves shall be pneumatic and blocked by switches at the end
travel of the transfer.

M. COMPUTER CONTROL AND DATA ACQUISITION SYSTEM
• The FIB NanoImplanter system shall have computer control systems and
computer data acquisition systems.

N. INSTALLATION REQUIREMENTS
• Power and Grounding:
1. Power shall be one single phase 100 V (+/-10%) AC, 50/60 Hz, 5 kVA.
2. Power shall be one three phase 200 V (+/-10%) AC, 50/60 Hz, 10 kVA.
3. Transformers shall be provided by vendor.
4. Grounding terminal shall be one, 10 mOhms or less.
• Water:
1. Flow rate shall be two (2)-four (4) l/min. (1-2 gal/min)
2. Pressure shall be 0.15 to 0.35 MPa. (1.5-3.5 kgf/cm2) (22-51 psi)
3. Temperature shall be 25 +/- 1 °C (77 +- 2 oF) in imaging mode.
4. Temperature shall be 25 +/- 0.5 °C (77 +- 1 oF) in drawing mode.
5. Water supply line shall be one, ISO 7/1 Rc ¼ (internal thread)
6. Water return line shall be one, ISO 7/1 Rc ¼ (internal thread)
7. Water chillers shall be provided by vendor.
• Dry nitrogen gas:
1. Number of lines shall be two.
2. Pressure shall be 0.02 to 0.05 MPa (0.2-0.5 kgf/cm2) (3-7 psi) for gas
purge, 0.5 to 0.6 MPa (5-6 kgf/cm2) (7-9 psi) for valve drive.
3. Couplers shall be two, ISO 7/1 Rc 1/4
• Environment:
1. Temperature shall be 20 +/- 0.2 °C (69 +- 0.4 oF).
2. Humidity shall be 60% or less.
3. AC stray magnetic field shall be 1mGauss peak to peak or less (20 nT
peak to peak).
4. Floor space (all options) shall be 6.7 m x 5.8 m or more (22 f x 19 f).
5. Ceiling height shall be 2.8 m or more (9.2 f).
6. Floor vibration shall be 3 μm peak to peak or less.
7. Floor strength shall be 1000 kg/m2 or more.
8. Entrance size shall be 2.5(W) x 2.3(H) or more (8.2 f x 7.6 f).
9. Exhaust pipe for RP shall be at least 51mm (I.D.), 61mm (O.D.) (2 inches
diameter).
• Insulating gas:
1. Gas shall be Sulfur Hexflouride ( SF6 ).
2. Pressure shall be 0.18 MPa (1.8kgf/cm2) (26 psi).
3. SF6 gas provided by Sandia National Laboratories.

O. SUPPLIER INSTALLATION SUPPORT
• Supplier shall install the equipment.
• The supplier shall provide a representative to perform startup, checkout, acceptance operations, and training of SNL personnel on equipment operation and maintenance.
• SNL personnel shall work with the representative during initial operations to learn as much as possible about the system.
• Supplier shall provide training in operation and maintenance for one (1) week for up to six (6) Sandia employees or contractors.

P. REPAIR AND MAINTENANCE SUPPORT
• A reply from a representative either by phone or e-mail shall be provided by the supplier within 72 hours during the warranty period.
• All major subsystems shall be covered during the warranty period.

Q. MANUALS AND DRAWINGS
• Two (2) hard copies and one (1) electronic copy (in PDF format) of parts lists, wire lists, drawings and process control lists for operation, instruction, service and maintenance shall be provided one (1) month prior to installation.
• Two (2) complete hard-copy sets and one (1) electronic copy (in PDF format) of O&M manuals, design drawings and circuit diagrams of mechanical and electrical system shall be provided six (6) months after award of the contract.

1. The supplier shall provide information on the requirements for connection of the equipment to an accelerator.
2. Detailed drawings shall be supplied of the equipment and all mechanical components with electric requirements and connections.
3. Detailed electrical schematics shall be provided.
4. Detailed schematics shall be provided of all connections of the hardware to computer control systems and computer data acquisition systems
5. The supplier shall provide manuals for each of the subsystems. Detailed descriptions on how to control the scanning system shall be provided.

R. SYSTEM ACCEPTANCE
• Sandia employees or contractors may visit supplier’s factory for initial training andto observe the FIB NanoImplanter System meet specifications the following specifications:
1. FIB Implantation: For Ga+ at 100 keV energy, diameter of 10 nm or less and current greater than 1 pA. Demonstrate ion beams of Si, Be, and Au.
2. FIB Single-Ion Implantation: For Ga+ at 100 keV energy and using a Sandia supplied channeltron detector to exercise the Vendor’s single ion production hardware and software.
3. FIB Lithography: For Ga+ at 100 keV energy, demonstrate pattern writing of a single beam lines at vertical, horizontal, and 45 degree orientations. Vendor will be required to make three (3) arrays (0.2 micrometer x 0.2 micrometer in size) of the same pattern separated by 0.2 micrometers.
4. FIB assisted gas deposition, FIB assisted reactive gas etching hardware and software shall be provided. Testing for acceptance will include all hardware and software for non-reactive gases.
5. Microcutting: for a Ga+ beam at 100 keV into Si, draw a pattern of horizontal, vertical, and 45 degree lines. Pitch should be high with a 100 nm wide and 100 nm depth line.
6. Source preparation system shall be provided for a wide variety of additional elemental sources and demonstrated.

• A representative of the supplier shall be provided during system startup and acceptance to insure a successful installation and start up of entire system and for training of Sandia personnel.
• Final acceptance of the specifications will be in the Ion Beam Laboratory at Sandia National Laboratories, Albuquerque, NM
1. FIB Implantation: For Ga+ at 100 keV energy, diameter of 10 nm or less and current greater than 1 pA. Demonstrate ion beams of Si, Be, and Au.
2. FIB Single-Ion Implantation: For Ga+ at 100 keV energy and using a Sandia supplied channeltron detector to exercise the Vendor’s single ion production hardware and software.
3. FIB Lithography: For Ga+ at 100 keV energy, demonstrate pattern writing of a single beam lines at vertical, horizontal, and 45 degree orientations. Vendor will be required to make three (3) arrays (0.2 micrometer x 0.2 micrometer in size) of the same pattern separated by 0.2 micrometers.
4. FIB assisted gas deposition, FIB assisted reactive gas etching hardware and software shall be provided. Testing for acceptance will include all hardware and software for non-reactive gases.
5. Microcutting: for a Ga+ beam at 100 keV into Si, draw a pattern of horizontal, vertical, and 45 degree lines. Pitch should be high with a 100 nm wide and 100 nm depth line.
6. Source preparation system shall be provided for a wide variety of additional elemental sources and demonstrated.
• All equipment specifications shall be met for a continuous one (1) hour period.

S. SPARES
• System shall include a complete set of spare parts, including, four (4) sets spare aperture foils ( for between CL1 and CL2, , two (2) sets spare extraction apertures, two (2) spare Ga emitter sources, three (3) additional spare sensitive electronic components that might be damaged or fail, and all special tools required for service and maintenance.

T. SYSTEM WARRANTY
• The equipment shall be warranted free from defects in workmanship and materials for a period of at least 12 months from the date of final acceptance at SNL.
• Warranty shall include all labor, materials, and Vendor technical personnel travel expenses to Sandia National Laboratories-Albuquerque, NM for repairs.
• The required labor and materials to restore any failure to “like new” condition shall be provided by the supplier.

U. SYSTEM RELIABILITY
• The equipment shall be expected to operate for at least one year between maintenance or repair under normal operation

Mandatory RequirementsSee Above
Estimated Value of Contract$3.7M
Estimated Period of PerformanceDelivery 8/1/2011
Estimated RFQ Release Date1/30/2009
Competition TypeCompetitive

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