+ Visit NASA.gov + Contact NASA   + Home Select Search Field * All Report - Patent Number Abstract *Accession Number *NASA Center *Author NameDocument IDKeywordsPublication Date *Title * Find Results With All of the words At least one of the words Enter Search Term  within returned results    Search Tips: Use only the fields with * to search NIX collection. Enclose terms in double quotation marks (") to search for exact phrases, ie: "space shuttle". NOTE: Commas and dashes are removed from search term by search engine. Select Reset Search button to start a new search. See Help for more tips. + NASA Center + Publication Year + Subject + Availability Options + Item/Media Type Selected Navigations: Author > Mattauch, R. J. [x] Sort results by: NASA Center | Date Added to NTRS | Publication Year There are a total of 31 record(s) matching your query. Sorted by: Date Added To NTRS in Descending order 1 2 3 4 Next  Investigation of the detectivity of radiation- produced defect levels in n- and p-type silicon and germanium Final report Author(s): Mattauch, R. J. Abstract: Spectral results of p- and n-type silicon and germanium NASA Center: NASA (non Center Specific) Publication Year: 1969 Added to NTRS: 2008-07-24 Accession Number: 70N15784; Document ID: 19700006480; Report Number: EE-4031-103-69U, NASA-CR-66884 Controlled in situ etch-back Author(s): Mattauch, R. J. Abstract: A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated ... NASA Center: Jet Propulsion Laboratory Publication Year: 1981 Added to NTRS: 2008-01-25 Accession Number: 83N20789; Document ID: 19830012518 Investigation of the detectivity of radiation- produced defect levels in n and p type silicon and germanium Semiannual progress report Author(s): Mattauch, R. J. Abstract: Black body responsivity data of n-type and p-type silicon NASA Center: NASA (non Center Specific) Publication Year: 1969 Added to NTRS: 2007-10-23 Accession Number: 70N20465; Document ID: 19700011160; Report Number: EE-4031-102-69U, NASA-CR-66884 The effects of Co super 60 gamma radiation on MOS diodes. Author(s): Lade, R. W.; Mattauch, R. J. Abstract: Cobalt 60 gamma radiation effect on MOS diodes fabricated on silicon substrates, noting surface state and oxide charge densities NASA Center: NASA (non Center Specific) Publication Year: 1967 Added to NTRS: 2006-11-06 Accession Number: 67A36961; Document ID: 19670058232 A study on the effect of C060 gamma-radiation on steam-grown SiO2 MOS structures Author(s): Lade, R. W.; Mattauch, R. J. Abstract: Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrates NASA Center: NASA (non Center Specific) Publication Year: 1966 Added to NTRS: 2006-11-06 Accession Number: 66N39707; Document ID: 19660030417; Report Number: NASA-CR-78941, SDL-5-588-1 Tables of f/us, ub/ and g/us, ub/ functions for semiconductor surface calculations Author(s): Hoadley, G. B.; Lade, R. W.; Mattauch, R. J. Abstract: Derivation of mathematical functions for calculating changes in semiconductor surfaces due to applied surface charge NASA Center: NASA (non Center Specific) Publication Year: 1963 Added to NTRS: 2006-11-06 Accession Number: 65N34697; Document ID: 19650025096; Report Number: NASA-CR-67169 Surface state density variations on MOS STRUCTURES due to gamma radiation. Author(s): Lade, R. W.; Mattauch, R. J. Abstract: Surface state density variations on metal oxide semiconductor capacitors due to gamma radiation NASA Center: NASA (non Center Specific) Publication Year: 1965 Added to NTRS: 2006-11-06 Accession Number: 66A16646; Document ID: 19660037356 Frequency shifting with a solid-state switching capacitor Author(s): Mattauch, R. J.; Viola, T. J., Jr. Abstract: Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and ... NASA Center: NASA (non Center Specific) Publication Year: 1973 Added to NTRS: 2005-09-30 Accession Number: 73B10259; Document ID: 19730000259; Report Number: HQN-10812 Low-Noise Submillimeter-Wave Diode Author(s): Mattauch, R. J. Abstract: Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons ... NASA Center: Jet Propulsion Laboratory Publication Year: 1984 Added to NTRS: 2005-09-30 Accession Number: 83B10498; Document ID: 19830000498; Report Number: NPO-15935 Electrolytic Sharpening of Diode-Contact Whiskers Author(s): Green, G.; Mattauch, R. J. Abstract: Phosphor bronze wire pointed without highly-toxic chemical reagents. Phosphor bronze wire to be pointed affixed to metal post held by fixture, such as pin vise. Fixture moved axially by micrometer allows precise control of ... NASA Center: Jet Propulsion Laboratory Publication Year: 1983 Added to NTRS: 2005-09-30 Accession Number: 83B10222; Document ID: 19830000222; Report Number: NPO-15789 1 2 3 4 Next  + Back to Top + Sponsored by the NASA Scientific and Technical    Information Program + 2004 Vision for Space Exploration + Freedom of Information Act + NASA Web Privacy Policy and Important Notices + NASA Disclaimers, Copyright Notice,    and Terms and Conditions of Use NASA Official: Calvin Mackey Page Curator: NASA Center for AeroSpace Information (help@sti.nasa.gov) Last Updated: July 5, 2007