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ISSUE 17: SCIENTIFIC LITERATURE (Mid-March through Late May 2003) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication · Academy Sinica (China). "Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method." B QU, Z CHEN, D LU, P HAN, X LIU, X WANG, D WANG, Q ZHU, and Z WANG, in Journal of Crystal Growth, 2003, 252(1-3):19-25. [Click on Volume 252, Issues 1-3 then scroll to abstract] · Bell Labs - Lucent Technologies. "Intersubband absorption at lambda similar to 2.1 mu m in A-plane GaN/AlN multiple quantum wells." C GMACHL and H NG, in Electronics Letters, 2003, 39(6):567-569. [Available to IEEE member subscribers, see publications page online] · Ben Gurion University-Negev (Israel) / University of California-Santa Barbara. "High-quality GaN on intentionally roughened c-sapphire." Y GOLAN, P FINI, D DAHAN, F WU, S ZAMIR, J SALZMAN, and J SPECK, in European Physical Journal-Applied Physics, 2003, 22(1):11-14. [ Abstract] · Carnegie Mellon University / Xerox - PARC / Max Plank Gesellschaft Fritz Haber Institute (Germany). "Morphology and surface reconstructions of GaN(1(1)over-bar00) surfaces." C LEE, R FEENSTRA, J NORTHRUP, L LYMPERAKIS, and J NEUGEBAUER, in Applied Physics Letters, 2003, 82(11):1793-1795. [ Abstract] · CEA (France) / Hokkaido University (Japan). "Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates." J BRAULT, S TANAKA, E SARIGIANNIDOU, J ROUVIERE, B DAUDIN, G FEUILLET, and H NAKAGAWA, in Journal of Applied Physics, 2003, 93(5):3108-3110. [ Abstract] · CEA Grenoble CNRS (France) / University of Grenoble (France) / NGK Insulators Ltd. (Japan). "In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy." E MONROY, N GOGNEAU, D JALABERT, E BELLET-AMALRIC, Y HORI, F ENJALBERT, L DANG, and B DAUDIN, in Applied Physics Letters, 2003, 82(14):2242-2244. [ Abstract] · Chinese Academy of Science (China) / Guangxi University (China). "Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy." X SHEN, G FENG, B ZHANG, L DUAN, Y WANG, and H YANG, in Journal of Crystal Growth, 2003, 252(1-3):9-13. . [Click on Volume 252, Issues 1-3 then scroll to abstract] · Chinese Academy of Sciences (China). "(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition." F ZHANG, N CHEN, X LIU, Z LIU, S YANG, and C CHA, in Journal of Crystal Growth, 2003, 252(1-3):202-207 . [Click on Volume 252, Issues 1-3 then scroll to abstract] · Chonbuk National University (South Korea). "Two-step growth of GaN films grown on Si(111) substrate by using SiC intermediate layer." M KWON, Y JEONG, E SHIN, J KIM, K LIM, S LEE, and K NHAM, in Journal of the Korean Physical Society, 2003, 42:S625-S628. [ Abstract] · Chonbuk National University (South Korea) / LG Electronics Institute of Technology (South Korea). "Control of surface morphology and crystal quality of lateral epitaxial overgrown GaN films employing two-step growth." H CHEONG, J PARK, C HONG, J YI, and S LEEM, in Journal of the Korean Physical Society, 2003, 42:S416-S420. [ Abstract] · Chonbuk National University (South Korea) / Rensselaer Polytechnic Institute / Chiba University (Japan). "Dry etching of InGaN/GaN multiple quantum-well LED structures in inductively coupled Cl-2/Ar Plasmas." H PARK, R CHOI, Y HAHN, Y IM, and A YOSHIKAWA, in Journal of the Korean Physical Society, 2003, 42(3):358-362. [ Abstract] · Chungnam National University (South Korea) / Chonbuk National University (South Korea). "Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN." S PARK, B O, and C LEE, in Journal of Crystal Growth, 2003, 249(3-4):455-460. [Click on Volume 249, Issues 3-4 then scroll to abstract] · Chungnam National University (South Korea) / Chonbuk National University (South Korea) / Korea Research Institute of Standards and Science (South Korea). "Influence of SiN buffer layer in GaN epilayers." S PARK, S LIM, C LEE, C KIM, and B O, in Journal of Crystal Growth, 2003, 249(3-4):487-491. [Click on Volume 249, Issues 3-4 then scroll to abstract] · Chungnam National University (South Korea) / Korea Research Institute for Standards and Science (South Korea) / Korea Basic Sciences Institute (South Korea) / Korea Research Institute for Chemical Technology (South Korea) / Tohoku University (Japan). "GaMnN thin films grown on sapphire and GaAs substrates using single GaN precursor via molecular beam epitaxy." K KIM, K LEE, J PARK, D KIM, H KIM, Y IHM, C KIM, H LEE, C KIM, S YOO, D DJAYAPRAWIRA, and M TAKAHASHI, in Journal of the Korean Physical Society, 2003, 42:S399-S402. [ Abstract] · Chungnam National University (South Korea) / Tohoku University (Japan) / Korea Research Institute of Standards and Science (South Korea). "Magnetotransport of p-type GaMnN assisted by highly conductive precipitates." K KIM, K LEE, D KIM, H KIM, Y IHM, D DJAYAPRAWIRA, M TAKAHASHI, C KIM, C KIM, and S YOO, in Applied Physics Letters, 2003, 82(11):1775-1777. [ Abstract] · CINVESTAV (Mexico) / Texas Technical University. "Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine." V ELYUKHIN, G GARCIA-SALGADO, R PENA-SIERRA, and S NIKISHIN, in Journal of Applied Physics, 2003, 93(9):5185-5190. [ Abstract] · City University of Hong Kong (China). "Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD." W ZHANG, C CHAN, K CHAN, I BELLO, Y LIFSHITZ, and S LEE, in Applied Physics a-Materials Science & Processing, 2003, 76(6):953-955. [ Abstract] · CNRS (France). "Control of the polarity of GaN films using an Mg adsorption layer." N GRANDJEAN, A DUSSAIGNE, S PEZZAGNA, and P VENNEGUES, in Journal of Crystal Growth, 2003, 251(1-4):460-464. [Click on Volume 251, Issues 1-4 then scroll to abstract] · CNRS (France) / CEA Grenoble (France) / ISMRA University of Caen (France). "Ordering in undoped hexagonal AlxGa-xN grown on sapphire (0001) with 0.09 x 0.247." M LAUGT, E BELLET-AMALRIC, P RUTERANA, and F OMNES, in Physica Status Solidi B-Basic Research, 2003, 236(3):729-739. [ Abstract] · CNRS (France) / University of Valenciennes (France) / Faculté Polytechnique de Mons (Belgium). "Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)." F NATALI, F SEMOND, J MASSIES, D BYRNE, S LAUGT, O TOTTEREAU, P VENNEGUES, E DOGHECHE, and E DUMONT, in Applied Physics Letters, 2003, 82(9):1386-1388. [ Abstract] · Communication Research Lab (Japan). "Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy." M HIGASHIWAKI and T MATSUI, in Journal of Crystal Growth, 2003, 252(1-3):128-135. [Click on Volume 252, Issues 1-3 then scroll to abstract] · Communications Research Labs (Japan). "Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures." M HIGASHIWAKI and T MATSUI, in Journal of Crystal Growth, 2003, 251(1-4):494-498. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Cornell University. "Growth and passivation of AlGaN/GaN hetero structures." J SHEALY, T PRUNTY, E CHUMBES, and B RIDLEY, in Journal of Crystal Growth, 2003, 250(1-2):7-13. [Click on Volume 250, Issues 1-2 then scroll to abstract] · Dongguk University (South Korea) / Gyeongsang National University (South Korea) / Kansas State University. "Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition." Y PARK, K KIM, J LEE, H KIM, T KANG, H JIANG, and J LIN, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42(3):1231-123 [ Abstract] · FORTH (Greece) / University of Crete (Greece) / Commissariat a l'Energie Atomique (France). "Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence." E DIMAKIS, A GEORGAKILAS, M ANDROULIDAKI, K TSAGARAKI, G KITTLER, F KALAITZAKIS, D CENGHER, E BELLET-AMALRIC, D JALABERT, and N PELEKANOS, in Journal of Crystal Growth, 2003, 251(1-4):476-480. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Fukui University (Japan) / Wakasa Wan Energy Research Center (Japan). "Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs." B GHOSH, T TANIKAWA , A HASHIMOTO, A YAMAMOTO, and Y ITO, in Journal of Crystal Growth, 2003, 249(3-4):422-428. [Click on Volume 249, Issues 3-4 then scroll to abstract] · Georgia Institute of Technology / CNR (Italy) / Duke University. "The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films." G NAMKOONG, W DOOLITTLE, A BROWN, M LOSURDO, M GIANGREGORIO, and G BRUNO, in Journal of Crystal Growth, 2003, 252(1-3):159-166. [Click on Volume 252, Issues 1-3 then scroll to abstract] · Harvard University. "Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices." Z ZHONG, F QIAN, D WANG, and C LIEBER, in Nano Letters, 2003, 3(3):343-346. [Must be an ACS subscriber to view abstract] · Infineon Technology (Germany) / Vienna University of Technology (Austria). "Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry." R AVERBECK, G KOBLMUELLER, H RIECHERT, and P PONGRATZ, in Journal of Crystal Growth, 2003, 251(1-4):505-509. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Institut fur Oberflachenmodifizierung (Germany) / University of Leipzig (Germany). "Influence of preparation parameters for low-energy ion beam nitridation of III-V semiconductor surfaces." J HECHT, F FROST, A SIDORENKO, D HIRSCH, H NEUMANN, A SCHINDLER, S KRASNIKOW, L ZHANG, and T CHASSE, in Solid-State Electronics, 2003, 47(3):413-418. [ Click on Volume 47, Issue 3 then scroll to abstract] · Iowa State University / Sandia National Labs. "Photonic band gap effect in layer-by-layer metallic photonic crystals." Z LI, I EL-KADY, K HO, S LIN, and J FLEMING, in Journal of Applied Physics, 2003, 93(1):38-42. [ Abstract] · IQE Inc. / Bell Labs - Lucent Technologies / IQE Europe Ltd. (UK) / Pennsylvania State University. "MBE development of dilute nitrides for commercial long-wavelength laser applications." O MALIS, W LIU, C GMACHL, J FASTENAU, A JOEL, P GONG, S BLAND, and N MOSHEGOV, in Journal of Crystal Growth, 2003, 251(1-4):432-436. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Kanazawa Institute of Technology (Japan). "Ab initio molecular orbital characterization of sources for photo-assisted radical beam epitaxy of group-III nitrides." K HAYASHI, T KANAYAMA, H KOJIMA, and T SHIMIZU, in Computational Materials Science, 2003, 27(1-2):50-57. [Click on Volume 27, Issues 1-2 then scroll to abstract] · Kwangju Institute of Science and Technology (South Korea) / University of California-San Diego. "Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy." M KIM, F JUANG, Y HONG, C TU, and S PARK, in Journal of Crystal Growth, 2003, 251(1-4):465-470.[Click on Volume 251, Issues 1-4 then scroll to abstract] · LG Electronics Institute of Technology (South Korea). "Characteristics of nitride-based laser diode grown on SiO2-removed laterally overgrown GaN." Y CHOI, M KIM, J YI, J JEON, S KHYM, J LEE, H YUH, H SONG, and S LEEM, in Journal of the Korean Physical Society , 2003, 42:S129-S133. [ Abstract] · Max Planck Institut fur Kohlenforsch (Germany) / Ruhr University of Bochum (Germany). "Template assisted design of microporous gallium nitride materials." G CHAPLAIS, K SCHLICHTE, O STARK, R FISCHER, and S KASKEL, in Chemical Communications, 2003(6):730-731. [ Abstract] · National Chiao Tung University (Taiwan). "The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films." P LIN and Y WU, in Materials Chemistry and Physics, 2003, 80(2):397-400.[Click on Volume 80, Issue 2, then scroll to abstract] · National Institute of Advanced Industrial Science and Technolgoy (Japan). "Initial stage of GaN nucleation on root 3 x root 3 R30 degrees-Ga reconstructed 4H-SiC(0001)(Si) by molecular-beam epitaxy." K JEGANATHAN, M SHIMUZU, H OKUMURA, F HIROSE, and S NISHIZAWA, in Surface Science, 2003, 527(1-3):L197-L202. [Click on Volume 527, Issues 1-3 then scroll to abstract] · National Renewable Energy Laboratory. "A comparison of MBE- and MOCVD-grown GaInNAs." A PTAK, S JOHNSTON, S KURTZ, D FRIEDMAN, and W METZGER, in Journal of Crystal Growth, 2003, 251(1-4):392-398. [Click on Volume 251, Issues 1-4 then scroll to abstract] · National Sun Yat Sen University (Taiwan). "Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy." L TU, C HSIAO, T CHI, I LO, and K HSIEH, in Applied Physics Letters, 2003, 82(10):1601-1603. [ Abstract] · National Taiwan University of Science and Technology (Taiwan). "Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine." Y HSU, L HONG, and J TSAY, in Journal of Crystal Growth, 2003, 252(1-3):144-151. [Click on Volume 252, Issues 1-3 then scroll to abstract] · NTT Corporatioin (Japan). "Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy." K KUMAKURA, T MAKIMOTO, and N KOBAYASHI, in Journal of Applied Physics, 2003, 93(6):3370-3375. [ Abstract] · Ohio University / Oberlin College. "Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N." M HAIDER, C CONSTANTIN, H AL-BRITHEN, H YANG, E TRIFAN, D INGRAM, A SMITH, C KELLY, and Y IJIRI, in Journal of Applied Physics, 2003, 93(9):5274-5281. [ Abstract] · Osaka City University (Japan) / Kobe University (Japan) / National Institute of Advanced Industrial Science and Technology (Japan ) / Russian Academy of Science (Russia). "MBE growth and properties of room-temperature (Ga,Mn)N-Mn4N granular magnetic semiconductors." H NAKAYAMA, H MASHITA, E KULATOV, R FUNAHASHI, and H OHTA, in Journal of Magnetism and Magnetic Materials, 2003, 258:323-325. [Click on Volumes 258-259 then scroll to abstract] · Osaka University (Japan). "MBE growth and properties of GaCrN." M HASHIMOTO, Y ZHOU, M KANAMURA, H KATAYAMA-YOSHIDA, and H ASAHI, in Journal of Crystal Growth, 2003, 251(1-4):327-330. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Paul Drude Institut fur Festkorperelekt (Germany). "Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content." G MUSSLER, L DAWERITZ, and K PLOOG, in Journal of Crystal Growth, 2003, 251(1-4):399-402. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Paul Drude Institut fur Festkorperelekt (Germany) / Rhein Westfal TH Aachen (Germany). "Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy." S DHAR, O BRANDT, A TRAMPERT, L DAWERITZ, K FRIEDLAND, K PLOOG, J KELLER, B BESCHOTEN, and G GUNTHERODT, in Applied Physics Letters, 2003, 82(13):2077-2079. [ Abstract] · Paul Drude Institut fur Festkorperelekt (Germany) / University of California-Santa Barbara. "Nonpolar InxGa1-xN/GaN(1(1)over-bar-00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy - art. no. 041306." Y SUN, O BRANDT, S CRONENBERG, S DHAR, H GRAHN, K PLOOG, P WALTEREIT, and J SPECK, in Physical Review B, 2003, 6704(4):1306. [ Abstract] · Peking University (China). "High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition." X CHEN, J XU, R WANG, and D YU, in Advanced Materials, 2003, 15(5):419-+. [ Abstract] · Peking University (China) / Nanjing University (China) / University of Wisconsin. "Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN films." Z CHEN, Z QIN, X HU, T YU, Z LI, Z YANG, M LU, G ZHANG, R ZHANG, J ZHU, B SHEN, Y ZHENG, and L KUECH, in Physica B-Condensed Matter, 2003, 327(1):34-38. [Click on Volume 327, Issue 1 then scroll to abstract] · Shandong University (China) / Shandong Normal University (China). "Preparation and properties of GaN films on Si(111) substrates." Y YANG, H MA, X HAO, J MA, C XUE, and H ZHUANG, in Science in China Series G-Physics Astronomy, 2003, 46(2):173-177. [ Abstract] · Stanford University. "The role of Sb in the MBE growth of (GaIn)(NAsSb)." K VOLZ, V GAMBIN, W HA, M WISTEY, H YUEN, S BANK, and J HARRIS, in Journal of Crystal Growth, 2003, 251(1-4):360-366. [Click on Volume 251, Issues 1-4 then scroll to abstract] · SUNY Stony Brook. "Epitaxy growth kinetics of GaN films." B WU, R MA, and H ZHANG, in Journal of Crystal Growth, 2003, 250(1-2):14-21. [Click on Volume 250, Issues 1-2 then scroll to abstract] · Swiss Federal Institute of Technology (Switzerland) / Forschungszentrum Julich (Germany). "Comparative study on methods to structure sapphire." A CRUNTEANU, P HOFFMANN, M POLLNAU, and C BUCHAL, in Applied Surface Science, 2003, 208:322-326. [Click on Volumes 208-209, then scroll to abstract] · Tampere University of Technology (Finland). "A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells." C PENG, W LI, T JOUHTI, E PAVELESCU, and M PESSA, in Journal of Crystal Growth, 2003, 251(1-4):378-382. [[Click on Volume 251, Issues 1-4 then scroll to abstract] · Teikyo University of Science and Technology (Japan). "Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy." R KIMURA, A SHIGEMORI, J SHIKE, K ISHIDA, and K TAKAHASHI, in Journal of Crystal Growth, 2003, 251(1-4):455-459. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Thales Research and Technology (France) / National Research Council of Canada (Canada). "Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon." J DUBOZ, N DE L'ISLE, L DUA, P LEGAGNEUX, M MOSCA, J REVERCHON, B DAMILANO, N GRANDJEAN, F SEMOND, J MASSIES, R DUDEK, D POITRAS, and T CASSIDY, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42(1):118-121.[ Abstract] · Tohoku University (Japan). "MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties." P CHEN, H MAKINO, J KIM, and T YAO, in Journal of Crystal Growth, 2003, 251(1-4):331-336.[Click on Volume 251, Issues 1-4 then scroll to abstract] · Tohoku University (Japan) / Bashkir State University (Russia) / Institute of Physics (China). "Layer-by-layer growth of Ag on a GaN(0001) surface." K WU, Q XUE, R BAKHTIZIN, Y FUJIKAWA, X LI, T NAGAO, Q XUE, and T SAKURAI, in Applied Physics Letters, 2003, 82(9):1389-1391. [ Abstract] · Tokyo Institute of Technology (Japan). "Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy." S MAKINO, T MIYAMOTO, M OHTA, T KAGEYAMA, Y IKENAGA, F KOYAMA, and K IGA, in Journal of Crystal Growth, 2003 , 251(1-4):372-377. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Universidad Federal do Rio Grande du Norte Campus Universitario (Brazil) / UFPB (Brazil). "Effects during plasma nitriding of shaped materials of different sizes." A DE ATAIDE, C ALVES, and J LEITE, in Surface & Coatings Technology, 2003, 167(1):52-58. [Click on Volume 167, Issue 1 then scroll to abstract] · University of California-Berkeley. "Single-crystal gallium nitride nanotubes." J GOLDBERGER, R HE, Y ZHANG, S LEE, H YAN, H CHOI, and P YANG, in Nature, 2003, 422(6932):599-602. [ Abstract] · University of California-San Diego / National Huwei Institute of Technology (Taiwan) / Kwangju Institute of Science and Technology (South Korea). " Growth and characterization of GaInNP grown on GaAs substrates." Y HONG, F JUANG, M KIM, and C TU, in Journal of Crystal Growth, 2003, 251(1-4):437-442. [Click on Volume 251, Issues 1-4 then scroll to abstract] · University of Florida / University of Virginia. "GaN films annealed under high pressure." F KELLY, R CHODELKA, R SINGH, S PEARTON, M OVERBERG, and J FITZ-GERALD, in Solid-State Electronics, 2003, 47(6):1081-1087. [ Click on Volume 47, Issue 6 then scroll to abstract] · University of Florida / USA Research Office. "Vertical and lateral mobilities in n-(Ga, Mn)N." J KIM, F REN, G THALER, R FRAZIER, C ABERNATHY, S PEARTON, J ZAVADA, and R WILSON, in Applied Physics Letters, 2003, 82(10):1565-1567. [ Abstract] · University of Nottingham (UK). "MOMBE growth studies of GaN using metalorganic sources and nitrogen." T LI, R CAMPION, C FOXON, S RUSHWORTH, and L SMITH, in Journal of Crystal Growth, 2003, 251(1-4):499-504. [Click on Volume 251, Issues 1-4 then scroll to abstract] · University of Nottingham (UK) / University of Cambridge (UK). "Arsenic incorporation in GaN during growth by molecular beam epitaxy." C FOXON, S NOVIKOV, T LI, R CAMPION, A WINSER, I HARRISON, M KAPPERS, and C HUMPHREYS, in Journal of Crystal Growth, 2003, 251(1-4):510-514. [Click on Volume 251, Issues 1-4 then scroll to abstract] · University of Science and Technology (China). "Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature." J XIAO, Y XIE, R TANG, and W LUO, in Inorganic Chemistry, 2003, 42(1):107-111. [ Abstract] · University of Science and Technology of China (China) / Hong Kong Polytechnical University (China). "Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy." C ZHU, J XIE, W FONG, and C SURYA, in Materials Letters, 2003, 57(16-17):2413-2416. [Click on Volume 57, Issues 16-17 then scroll to abstract] · University of South Carolina. "Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes." A CHITNIS, J ZHANG, V ADIVARAHAN, M SHATALOV, S WU, R PACHIPULUSU, V MANDAVILLI, and M KHAN, in Applied Physics Letters, 2003, 82(16):2565-2567. [ Abstract] · University of Tokushima (Japan). "A novel method of building a compositional non-uniformity in an InGaN layer grown on sapphire substrate by metalorganic chemical vapor deposition."K AOYAMA and S SAKAI, in Japanese Journal of Applied Physics Part 2-Letters, 2003, 42(3B):L270-L272. [ Abstract] · University of Tokyo (Japan) / National Institute for the Advancement of Science and Technolgoy (Japan). "Termination mechanism of inversion domains by stacking faults in GaN." C IWAMOTO, X SHEN, H OKUMURA, H MATSUHATA, and Y IKUHARA, in Journal of Applied Physics, 2003, 93(6):3264-3269. [ Abstract] · University of Warsaw (Poland) / Warsaw University of Technolgoy (Poland) / PAS (Poland). "Possible origin of ferromagnetism in (Ga,Mn)N." M ZAJAC, J GOSK, E GRZANKA, M KAMINSKA, A TWARDOWSKI, B STROJEK, T SZYSZKO, and S PODSIADLO, in Journal of Applied Physics, 2003, 93(8):4715-4717. [ Abstract] · Unversidad Nacional Autonoma de Mexico (Mexico). "Influence of deposition conditions on optical properties of aluminum nitride (AlN) thin films prepared by DC-reactive magnetron sputtering." A MAHMOOD, N RAKOV, and M XIAO, in Materials Letters, 2003, 57(13-14):1925-1933. [Click on Volume 57, Issues 13-14 then scroll to abstract] · Wright State University / Yale University / University of Illinois. "Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition." Z FANG, D LOOK, X WANG, J HAN, F KHAN, and I ADESIDA, in Applied Physics Letters, 2003, 82(10):1562-1564. [ Abstract] · Yonsei University (South Korea). "Formation of p-type ZnO film on InP substrate by phosphor doping." K BANG, D HWANG, M PARK, Y KO, I YUN, and J MYOUNG, in Applied Surface Science, 2003, 210(3-4):177-182. [Click on Volume 210, Issues 3-4 then scroll to abstract] B. Materials and Device Design Properties · AF Ioffe Physical Technical Institute (Russia) / University of California-San Diego. "Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures." A EGOROV, V ODNOBLUDOV, V MAMUTIN, A ZHUKOV, A TSATSUL'NIKOV, N KRYZHANOVSKAYA, V USTINOV, Y HONG, and C TU, in Journal of Crystal Growth, 2003, 251(1-4):417-421. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Arizona State University. "Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(root 3x root 3)." C HU, A BELL, L SHI, F PONCE, D SMITH, and I TSONG, in Applied Physics Letters, 2003, 82(17):2889-2891. [ Abstract] · Berdyansk State Pedagogical University (Ukraine) / National Academy of Science of the Ukraine (Ukraine). "Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs (001)." V KIDALOV , G SUKACH, A PETUKHOV, A REVENKO, and E POTAPENKO, in Journal of Luminescence, 2003, 102:712-714. [Click on Issues 102-103 then scroll to abstract] · Boston University / Crystal Photon Inc. "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1(1)over-bar-00) and (0001) GaN." A BHATTACHARYYA, I FRIEL, S IYER, T CHEN, W LI, J CABALU, Y FEDYUNIN, K LUDWIG, T MOUSTAKAS, H MARUSKA, D HILL, J GALLAGHER, M CHOU, and B CHAI, in Journal of Crystal Growth, 2003, 251(1-4):487-493. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Cardiff University (UK) / Sandia National Labs. "Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes." G LEWIS, P SMOWTON, P BLOOD, and W CHOW, in Applied Physics Letters, 2003, 82(10):1524-1526. [ Abstract] · Chalmers University of Technology (Sweden) / Chinese Academy of Sciences (China). "Electron mobilities, Hall factors, and scattering processes of n-type GaN epilayers studied by infrared reflection and Hall measurements - art. no. 113313." Y FU , M WILLANDER, Z LI, and W LU, in Physical Review B, 2003, 6711(11):3313. [ Abstract] · Chinese Academy of Science (China). "Design of high brightness cubic-GaN LEDs grown on GaAs substrate." Y SUN, X SHEN, Z ZHANG, D ZHAO, Z FENG, Y FU, S ZHANG, and H YANG, in Journal of the Korean Physical Society, 2003, 42:S753-S756. [ Abstract] · Chinese Academy of Sciences (China). "High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers." G FENG, X SHEN, J ZHU, B ZHANG, D ZHAO, Y WANG, H YANG, and J LIANG, in Journal of Crystal Growth, 2003, 250(3-4):354-358. [Click on Volume 250, Issues 3-4 then scroll to abstract] · Chonbuk National University (South Korea). "Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells." R CHOI, Y HAHN, H SHIM, M HAN, E SUH, and H LEE, in Applied Physics Letters, 2003, 82(17):2764-2766. [ Abstract] · Chonbuk National University (South Korea). "Structural and optical properties of trapezoid InGaN/GaN multiple quantum wells in the active layer of light emitting diodes." B LEE, R CHOI, H SHIM, C KIM, H YOON, D KANG, E SUH, C HONG, Y HAHN, and H LEE, in Journal of the Korean Physical Society, 2003, 42:S504-S507. [ Abstract] · Chonbuk National University (South Korea) / LG Philips (South Korea). "Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs." C YOUN, T JEONG, M HAN, J YANG, K LIM, and H YU, in Journal of Crystal Growth, 2003, 250(3-4):331-338. [Click on Volume 250, Issues 3-4 then scroll to abstract] · Chungnam National University (South Korea). "Characterization of polycrystalline GaN grown on silica glass substrates." S PARK, S LIM, and O BYUNGSUNG, in Journal of Crystal Growth, 2003, 250(3-4):349-353.][Click on Volume 250, Issues 3-4 then scroll to abstract] · Chungnam National University (South Korea) / HANtech (South Korea). "Correlation between structural and optical properties of polycrystalline GaN." S PARK, D KIM, and B O, in Journal of Crystal Growth, 2003, 252(1-3):87-91. [Click on Volume 252, Issues 1-3 then scroll to abstract] · CNRS (France). "Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates." N ANTOINE-VINCENT, F NATALI, M MIHAILOVIC , A VASSON, J LEYMARIE, P DISSEIX, D BYRNE, F SEMOND, and J MASSIES, in Journal of Applied Physics, 2003, 93(9):5222-5226. [ Abstract] · CNRS (France) / University of Barcelona (Spain). "Optical properties of silicon nanocrystal LEDs." J DE LA TORRE, A SOUIFI , A PONCET, C BUSSERET, M LEMITI, G BREMOND, G GUILLOT, O GONZALEZ, B GARRIDO, J MORANTE, and C BONAFOS, in Physica E-Low-Dimensional Systems & Nanostructures, 2003, 16(3-4):326-330. [Click on Volume 16; Issue 3-4 then scroll to abstract] · Cornell University. "Surface charge accumulation of InN films grown by molecular-beam epitaxy." H LU, W SCHAFF, L EASTMAN, and C STUTZ, in Applied Physics Letters, 2003, 82(11):1736-1738. [ Abstract] · Cornell University / Kwangju Institute of Science and Technology (South Korea). "Effects of transparent Pt metal layer on performance of InGaN/GaN multiple-quantum well light-emitting diodes." C HUH, W SCHAFF, L EASTMAN, and S PARK, in Electrochemical and Solid State Letters, 2003, 6(6):G79-G81. [ Abstract] · CSIC (Spain) / Universidad Autonoma Estado Morelos (Mexico) / Universidad La Habana (Cuba). "Tight-binding calculation of the electronic band structure of GaN, AlN and BN (001) ideal surfaces." V VELASCO, L GAGGERO-SAGER, and J TUTOR, in Surface Science, 2003, 529(1-2):267-273 . [Click on Volume 529, Issues 1-2 then scroll to abstract] · CUNY / Chinese Academy of Science (China) / National Taiwan University of Science and Technology (Taiwan). "Optical constants of cubic GaN/GaAs(001): Experiment and modeling." M MUNOZ, Y HUANG, F POLLAK, and H YANG, in Journal of Applied Physics, 2003, 93(5):2549-2553. [ Abstract] · Duke University / Virginia Commonwealth University / Waseda University (Japan). "Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy." A NEOGI, H EVERITT, H MORKOC, T KURODA, and A TACKEUCHI, in IEEE Transactions on Nanotechnology, 2003, 2(1):10-14. [Available to IEEE member subscribers, see publications page online.] · Ferdinand Braun Institute fur Hochstfrequenztech (Germany). "High brightness 735 nm tapered lasers - optimisation of the laser geometry." B SUMPF, R HULSEWEDE, G ERBERT, C DZIONK, FRICKE, A KNAUER, W PITTROFF, P RESSEL, J SEBASTIAN, and G TRANKLE, in Optical and Quantum Electronics, 2003, 35(4):521-532. [ TOC (Reader must be a Kluweronline subscriber or purchase the full text article)] · Hampton University / University of Cincinnati / USA Research Office. "Spectral and time-resolved photoluminescence studies of Eu-doped GaN." E NYEIN, U HOMMERICH, J HEIKENFELD, D LEE, A STECKL, and J ZAVADA, in Applied Physics Letters, 2003, 82(11):1655-1657. [ Abstract] · Huazhong University of Science and Technology (China) / Shanxi Normal University (China). "Study on the texture of AlN thin films by using the pole-figure method." X XU, H WU, W MA, J DUAN, and Z LI, in Journal of Inorganic Materials, 2003, 18(2):490-494. [No URL available] · Institute of Materials Research and Engineering (Singapore). "Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation." P CHEN, S CHUA, and Z MIAO, in Journal of Applied Physics, 2003, 93(5):2507-2509. [ Abstract] · Institute of Rare Metals (Russia) / University of Florida / AF Ioffe Fiziko (Russa) / Corning Applied Technologies. "Deep levels studies of AlGaN/GaN superlattices." A POLYAKOV, N SMIRNOV, A GOVORKOV, M MIL'VIDSKII, S PEARTON, A USIKOV, N SCHMIDT, A OSINSKY, W LUNDIN, E ZAVARIN, and A BESULKIN, in Solid-State Electronics, 2003, 47(4):671-676. [ Click on Volume 47, Issue 4 then scroll to abstract] · Institute of Rare Metals (Russia) / University of Florida / National Central University (Taiwan). "Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer." A POLYAKOV, N SMIRNOV, A GOVORKOV, J KIM, F REN, G THALER, M OVERBERG, R FRAZIER, C ABERNATHY, S PEARTON, C LEE, J CHYI, R WILSON, and J ZAVADA, in Solid-State Electronics, 2003, 47(6):981-987.[ Click on Volume 47, Issue 6 then scroll to abstract] · Institute of Rare Metals (Russia) / University of Florida / National Central University (Taiwan) / USA Research Office. "Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn." A POLYAKOV, N SMIRNOV, A GOVORKOV, J KIM, F REN, M OVERBERG, G THALER, C ABERNATHY, S PEARTON, C LEE , J CHYI, R WILSON, and J ZAVADA, in Solid-State Electronics, 2003, 47(6):963-968. [Abstract][ Click on Volume 47, Issue 6 then scroll to abstract] · Institute of Rare Metals (Russia) / University of Florida / USA Research Office. "Electrical and optical properties of Cr and Fe implanted n-GaN." A POLYAKOV, N SMIRNOV, A GOVORKOV, N PASHKOVA, A SHLENSKY, S PEARTON, M OVERBERG, C ABERNATHY, J ZAVADA, and R WILSON, in Journal of Applied Physics, 2003, 93(9):5388-5396. [ Abstract] · ISMRA Caen (France) / Universit of Sidi Bel Abbes (Algeria). "Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN." B BOUHAFS, F LITIMEIN, Z DRIDI, and P RUTERANA, in Physica Status Solidi B-Basic Research, 2003, 236(1):61-81. [ Abstract] · Kansas State University. "Advances in III-nitride microstructures and micro-size emitters." H JIANG and J LIN, in Journal of the Korean Physical Society, 2003, 42:S757-S764. [ Abstract] · Kansas State University. "Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers." K NAM, J LI, M NAKARMI, J LIN, and H JIANG, in Applied Physics Letters, 2003, 82(11):1694-1696. [ Abstract] · Kyushu Institute of Technology (Japan). "Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes." A HORI, D YASUNAGA, A SATAKE, and K FUJIWARA, in Journal of Applied Physics, 2003, 93(6):3152-3157. [ Abstract · Lumileds Lighting LLC. "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes." Y SHEN, J WIERER, M KRAMES, M LUDOWISE, M MISRA, F AHMED, A KIM, G MUELLER, J BHAT, S STOCKMAN, and P MARTIN, in Applied Physics Letters, 2003, 82(14):2221-2223. [ Abstract] · MIT. "Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate ." V YANG, S TING, M GROENERT, M BULSARA, M CURRIE, C LEITZ, and E FITZGERALD, in Journal of Applied Physics, 2003, 93(9):5095-5102. [ Abstract] · MIT. "Comprehensive heat exchange model for a semiconductor laser diode." K PIPE and R RAM, in IEEE Photonics Technology Letters, 2003, 15(4):504-506. [Available to IEEE member subscribers, see publications page online] · Nanjing University (China) / Chinese Academy of Science (China). "Raman studies of phosphorus incorporation in GaN1-xPx alloys." D CHEN, B SHEN, K ZHANG, R ZHANG, Y SHI, Y ZHENG, Z LI, and W LU, in Journal of Applied Physics, 2003, 93(8):4670-4672. [ Abstract] · Nanjing University (China) / Chinese Academy of Science (China) / University of Tokyo (Japan). "Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces." Z ZHENG, B SHEN, Y GUI, C JIANG, N TANG, R ZHANG, Y SHI, Y ZHENG, S GUO, G ZHENG, J CHU, T SOMEYA, and Y ARAKAWA, in Applied Physics Letters, 2003, 82(12):1872-1874. [ Abstract] · Nanyang Technology University (Singapore) / National University of Singapore (Singapore). "Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells." W FAN, S YOON, M LI, and T CHONG, in Physica B-Condensed Matter, 2003, 328(3-4):264-270. [Click on Volume 328, Issues 3-4 then scroll to abstract] · National Changhua Unviersity of Education (Taiwan). "Simulation of blue InGaN quantum-well lasers." J CHANG and Y KUO, in Journal of Applied Physics, 2003, 93(9):4992-4998. [ Abstract] · National Cheng Kung University (Taiwan) / National Central University (Taiwan). "Si and Zn co-doped InGaN-GaN white light-emitting diodes." S CHANG, L WU, Y SU, C KUO, W LAI, Y HSU, J SHEU, S CHEN, and J TSAI, in IEEE Transactions on Electron Devices, 2003, 50(2):519-521. [Available to IEEE member subscribers, see publications page online.] · National Cheng Kung University (Taiwan) / S Epitaxy Corporation (Taiwan) / Kun Shan University of Technology (Taiwan) / National Yunlin University of Science and Technology (Taiwan). "InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts." Y LIN, S CHANG, Y SU, T TSAI, C CHANG, S SHEI, C KUO, and S CHEN, in Solid-State Electronics, 2003, 47(5):849-853. [ Click on Volume 47, Issue 5 then scroll to abstract] · Nichia. "Red-enhanced white-light-emitting diode using a new red phosphor." M YAMADA , T NAITOU, K IZUNO, H TAMAKI, Y MURAZAKI, M KAMESHIMA, and T MUKAI, in Japanese Journal of Applied Physics Part 2-Letters, 2003, 42(1A-B):L20-L23. [ Abstract] · North Carolina State University. "Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)." T COOK, C FULTON, W MECOUCH, K TRACY, R DAVIS, E HURT, G LUCOVSKY, and R NEMANICH, in Journal of Applied Physics, 2003, 93(7):3995-4004. [ Abstract] · Ohio University. "Properties of amorphous GaNx prepared by ion beam assisted deposition at room temperature." Y KANG and D INGRAM, in Journal of Applied Physics, 2003, 93(7):3954-3962. [ Abstract] · Oklahoma State University. "Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN ." W ZHANG, A AZAD, and D GRISCHKOWSKY, in Applied Physics Letters, 2003, 82(17):2841-2843. [ Abstract] · Osaka University (Japan). "Materials design for semiconductor spintronics by ab initio electronic-structure calculation." H KATAYAMA-YOSHIDA and K SATO, in Physica B-Condensed Matter, 2003, 327(2-4):337-343. [Click on Volume 327, Issues 2-4 then scroll to abstract] · Otto Von Guericke University (Germany). "Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy." A KRTSCHIL, A DADGAR, and A KROST, in Applied Physics Letters, 2003, 82(14):2263-2265. [ Abstract] · Paul Drude Institute fur Festkorperelekt (Germany). "Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth." B JENICHEN, W BRAUN, V KAGANER, A SHTUKENBERG, L DAWERITZ, C SCHULZ, K PLOOG, and A ERKO, in Review of Scientific Instruments, 2003, 74(3):1267-1273. [ Abstract] · Peking University (China). "Etch pits and threading dislocations in GaN films grown by metal-organic chemical vapour deposition ." M LU, X CHANG, Z LI, Z YANG, G ZHANG, and B ZHANG, in Chinese Physics Letters, 2003, 20(3):398-400. [ Abstract] · PICOGIGA (France) / CNRS (France). "In surface segregation in InGaN/GaN quantum wells." A DUSSAIGNE, B DAMILANO, N GRANDJEAN, and J MASSIES, in Journal of Crystal Growth, 2003, 251(1-4):471-475. [Click on Volume 251, Issues 1-4 then scroll to abstract] · Riso National Lab (Denmark) / Lund Institute of Technology (Sweden). "Improvement of brightness and output power of high-power laser diodes in the visible spectral region." E SAMSOE, P MALM, P ANDERSEN, P PETERSEN, and S ANDERSSON-ENGELS, in Optics Communications, 2003, 219(1-6):369-375.[Click on Volume 219, Issues 1-6 then scroll to abstract] · Sacher Lasertech Group (Germany) / University of Potsdam (Germany). "Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy." L HILDEBRANDT, R KNISPEL, S STRY, J SACHER, and F SCHAEL, in Applied Optics, 2003, 42(12):2110-2118. [ Abstract] · Samsung Advanced Institute of Technology (South Korea). "Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD." S LEE, T SAKONG, W LEE, H PAEK, M SEON, I LEE, O NAM, and Y PARK, in Journal of Crystal Growth, 2003, 250(1-2):256-261. [Click on Volume 250, Issues 1-2 then scroll to abstract] · Seoul National University (South Korea) / University of Florida / Agere Systems. "Magnetic and structural properties of Co, Cr, V ion-implanted GaN." J LEE, J LIM, Z KHIM, Y PARK, S PEARTON, and S CHU, in Journal of Applied Physics, 2003, 93(8):4512-4516. [ Abstract] · Shanghai Jiao Tong University (China) / Saga University (Japan). "Raman investigations of disorder in InN thin films grown by reactive sputtering on GaAs." Z QIAN, W SHEN, H OGAWA, and Q GUO, in Journal of Applied Physics, 2003, 93(5):2643-2647. [ Abstract] · SUNY Stony Brook / Crystal IS Inc. / Rensselaer Polytechnic Institute. "X-ray characterization of bulk AlN single crystals grown by the sublimation technique." B RAGHOTHAMACHAR, M DUDLEY, J ROJO, K MORGAN, and L SCHOWALTER, in Journal of Crystal Growth, 2003, 250(1-2):244-250. [Click on Volume 250, Issues 1-2 then scroll to abstract] · Toyota Centeral Research and Development Labs (Japan) / Nagoya Institute of Technology (Japan). "Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes." Y NAKANO, T KACHI, and T JIMBO, in Applied Physics Letters, 2003, 82(15):2443-2445. [ Abstract] · UMIST (UK) / University of Exeter (UK). "Electron energy loss studies of dislocations in GaN thin films." U BANGERT, A GUTIERREZ-SOSA, A HARVEY, C FALL, and R JONES, in Journal of Applied Physics, 2003, 93(5):2728-2735. [ Abstract] · Universidad Autonoma Metropolitana Azcapotzalco (Mexico). "Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device." A KUNOLD and P PEREYRA, in Journal of Applied Physics, 2003, 93(9):5018-5024. [ Abstract] · Universidad Complutense de Madrid (Spain) / University of Bologna (Italy). "Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN." C DIAZ-GUERRA, J PIQUERAS, and A CAVALLINI, in Applied Physics Letters, 2003, 82(13):2050-2052. [ Abstract] · University of Bristol (UK). "Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose." S HENLEY and D CHERNS, in Journal of Applied Physics, 2003 , 93(7):3934-3939. [ Abstract] · University of California-Santa Barbara. "Memory effect and redistribution of Mg into sequentially regrown GaN layer by metalorganic chemical vapor deposition." H XING, D GREEN, H YU, T MATES, P KOZODOY, S KELLER, S DENBAARS, and U MISHRA, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42(1):50-53. [ Abstract] · University of California-Santa Barbara / FOM (Netherlands) / Sandia National Labs. "Modified spontaneous emission from erbium-doped photonic layer-by-layer crystals - art. no. 115106." M DE DOOD, A POLMAN, and J FLEMING, in Physical Review B, 2003, 6711(11):5106. [ Abstract] · University of Hong Kong (China) / City University of Hong Kong (China). "Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion - art. no. 125409." S XU, H WU, X DAI, W LAU, L ZHENG, M XIE, and S TONG, in Physical Review B, 2003, 6712(12):5409. [ Abstract] · University of Illinois / Princeton Optron Inc. / Sandia National Labs. "Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers." E YOUNG, K CHOQUETTE, J SEURIN, S CHUANG, K GEIB, and A ALLERMAN, in IEEE Journal of Quantum Electronics, 2003, 39(5):634-639. [Available to IEEE member subscribers, see publications page online] · University of Leeds (UK) / School of Electrical Engineering (Yugoslavia) / Air Force Research Lab-Hanscom AFB. "Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths." V JOVANOVIC, Z IKONIC, D INDJIN, P HARRISON, V MILANOVIC, and R SOREF, in Journal of Applied Physics, 2003, 93(6):3194-3197. [ Abstract] · University of Sao Paulo (Brazil) / Estadual Paulista University (Brazil) / Estadual Campinas University (Brazil) / University of Paderborn (Germany). "Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates." O NORIEGA, A TABATA, J SOARES, S RODRIGUES, J LEITE, E RIBEIRO, J FERNANDEZ, E MENESES, F CERDEIRA, D AS, D SCHIKORA, and K LISCHKA, in Journal of Crystal Growth, 2003, 252(1-3):208-212.[Click on Volume 252, Issues 1-3 then scroll to abstract] · University of Sheffield (UK) / Lumileds Lighting / University of New South Wales (UK). "Photon-number squeezing in visible-spectrum light-emitting diodes." P LYNAM, I MAHBOOB, A PARNELL, A FOX, and M KRAMES, in Electronics Letters, 2003 , 39(1):110-112. [Available to IEEE member subscribers, see publications page online] · University of South Carolina / North Carolina State University. "Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes." J BENDER, M SALMON, and P RUSSELL, in Scanning, 2003, 25(1):45-51. [ Abstract] · University of Strathclyde (UK). "Fabrication and performance of parallel-addressed InGaN micro-LED arrays." H CHOI, C JEON, M DAWSON, P EDWARDS, and R MARTIN, in IEEE Photonics Technology Letters, 2003, 15(4):510-512. [Available to IEEE member subscribers, see publications page online] · University of Sydney (Australia) / University of Cambridge (UK). "Electron energy-loss near edge structure (ELNES) of InGaN quantum wells." V KEAST, M KAPPERS, and C HUMPHREYS, in Journal of Microscopy-Oxford, 2003, 210:89-93. [ Abstract] · University of Tsukuba (Japan). "Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam." A UEDONO, H BANG, K HORIBE, S MORISHIMA, and K AKIMOTO, in Journal of Applied Physics, 2003, 93(9):5181-5184. [ Abstract] · University of Wurzburg (Germany). "Detection of electrical spin injection by light-emitting diodes in top- and side-emission configurations." R FIEDERLING, P GRABS, W OSSAU, G SCHMIDT, and L MOLENKAMP, in Applied Physics Letters, 2003 , 82(13):2160-2162. [ Abstract] · UTBM (France) / University of Sidi Bel Abbes (Algeria) / UIT Mesures Physiques (France) / Universite de Sidi Bel Abbes (Algeria). "Elastic properties of zinc-blende GaN, AlN and InN from molecular dynamics." F BENKABOU, M CERTIER, and H AOURAG, in Molecular Simulation, 2003, 29(3):201-209. [ Abstract] · Virginia Commonwealth University / MIT / University of Lecce (Italy) / Fundan University (China). "Current mapping of GaN films by conductive atomic force microscopy." A POMARICO, D HUANG, J DICKINSON, A BASKI, R CINGOLANI, H MORKOC, and R MOLNAR, in Applied Physics Letters, 2003, 82(12):1890-1892. [ Abstract] · Virginia Commonwealth University / University of California Berkeley / Samsung Advanced Institute of Technology (South Korea). "Characterization of GaN and InxGa1-xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures." K RAMAIAH, D HUANG, M RESHCHIKOV, F YUN, H MORKOC, J JASINSKI, Z LILIENTAL-WEBER, C SONE , S PARK, and K LEE, in Journal of Materials Science-Materials in Electronics, 2003, 14(4):233-245.[ TOC (Reader must be a Kluwer online subscriber or purchase the full text article)] · Xerox Corporation - PARC. "Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes." M KNEISSL, D TREAT, M TEEPE, N MIYASHITA, and N JOHNSON, in Applied Physics Letters, 2003, 82(15):2386-2388. [ Abstract] C. Packaging and Reliability · Peking University (China). "Synthesis and luminescence of gallium nitride LED blue light conversion materials." G YAO, Y FENG, J DUAN, and J LIN, in Acta Physico-Chimica Sinica, 2003, 19(3):226-229. [ Abstract] D. Other LED Lighting · National Institute of Applied Science and Technolgoy (Tunisia). "Study of a micro-machined tunable all air gap vertical cavity surface emitting laser." F ABDELMALEK, in Materials Letters, 2003, 57(15):2198-2200. [Click on Volume 57; Issue 15 then scroll to abstract] · Polish Academy of Science (Poland) / Agricultural University of Warsaw (Poland) / Macquarie University (Australia) / University of Technology-Sydney (Australia). "Origin of white color light emission in ALE-grown ZnSe." M GODLEWSKI, E GUZIEWICZ, K KOPALKO, E LUSAKOWSKA, E DYNOWSKA, M GODLEWSKI, E GOLDYS, and M PHILLIPS, in Journal of Luminescence, 2003, 102:455-459. [Click on Volume 102-103, then scroll to abstract] · University of New South Wales (Australia). "High-efficiency silicon light emitting diodes." M GREEN, J ZHAO, A WANG, and T TRUPKE, in Physica E-Low-Dimensional Systems & Nanostructures, 2003, 16(3-4):351-358. [Click on Volume 16, Issue 3-4 then scroll to abstract] E. Review Articles · Crystal Photon Inc. "Free-standing non-polar gallium nitride substrates." H MARUSKA, D HILL, M CHOU, J GALLAGHER, and B CHAI, in Opto-Electronics Review, 2003, 11(1):7-17. [No URL available] |
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