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ISSUE 20: SCIENTIFIC LITERATURE (Mid-September - Early December 2003) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication · Beijing Institute of Technology (China) / Hong Kong Polytechnic University (China):"Piezoelectric coefficient of InN thin films prepared by magnetron sputtering." C.B. Cao, H.L.W. Chan, and C.L. Choy,Thin Solid Films, 441(1-2):287-291 (September 22 2003) . [ Abstract ] · Bell Laboratories:"Spatial distribution of yellow luminescence related deep levels in GaN." J.W.P. Hsu, F.F. Schrey, and H.M. Ng, Applied Physics Letters, 83(20):4172-4174 (November 17 2003). [ Abstract ] · Berdyansk State Pedagogical University (Ukraine) / National Academy of Sciences (Ukraine):"The structure and luminescence of GaN films prepared by radical beam epitaxy on porous GaAs (111) substrates." V.V. Kidalov, G.A. Sukach, and A.S. Revenko,Russian Journal of Physical Chemistry, 77(10):1677-1678 (October 2003). [ Abstract ] · Brown University:"Nanoheteroepitaxy of GaN on a nanopore array Si surface." J. Liang, S.K. Hong, N. Kouklin, R. Beresford, and J.M. Xu,Applied Physics Letters, 83(9):1752-1754 (September 1 2003). [ Abstract ] · Chalmers University of Technology (Sweden) / Gothenburg University (Sweden) / Paul Drude Institute fur Festkorperelekt (Germany):"Arsenic incorporation and its influence on microstructure of wurtzite GaN grown by molecular-beam epitaxy." H.J. Kim, T.G. Andersson, J.M. Chauveau, and A. Trampert,Journal of Applied Physics, 94(11):7193-7200 (December 1 2003) [ Abstract ] · Chinese Academy of Sciences (China):"Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN." G.Q. Hu, X. Kong, Y.Q. Wang, L. Wan, X.F. Duan, Y. Lu, and X.L. Liu,Journal of Materials Science Letters, 22(22):1581-1583 (November 15 2003). [ Abstract ] · Chinese Academy of Sciences (China):"Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)." B.S. Zhang, M. Wu, X.M. Shen, J. Chen, J.J. Zhu, J.P. Liu, G. Feng, D.G. Zhao, Y.T. Wang, and H. Yang,Journal of Crystal Growth, 258(1-2):34-40 (October 2003). [ Abstract ] · CNRS (France): "Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks ." J.M. Bethoux, P. Vennegues, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond,Journal of Applied Physics, 94(10):6499-6507 (November 15 2003). [ Abstract ] · CNRS (France) / CEA (France) / Institut des Sciences de la Matičre et du Rayonnement (France):"An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD." M. Laugt, E. Bellet-Amalric, P. Ruterana, and F. Omnes,Journal of Physics and Chemistry of Solids, 64(9-10):1653-1656 (September 2003-October 31 2003). [ Abstract ] · CNRS (France) / University of Arkansas:"Origins of GaN(0001) surface reconstructions." S. Vezian, F. Semond, J. Massies, D.W. Bullock, Z. Ding, and P.M. Thibodo,Surface Science, 541(1-3):242-251 (September 1 2003). [ Abstract ]
· Dongguk University (South Korea) / Kyung Hee University (South Korea) / Hanyang University (South Korea):"InGaN nanorods grown on (111) silicon substrate by hydride vapor phase epitaxy." H.M. Kim, W.C. Lee, T.W. Kang, K.S. Chung, C.S. Yoon, and C.K. Kim,Chemical Physics Letters, 380(1-2):181-184 (October 13 2003). [ Abstract ] · Industrial Technology Research Institute (Taiwan) / National Central University (Taiwan):"Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature." R.C. Tu, C.J. Tun, S.M. Pan, C.C. Chuo, J.K. Sheu, C.E. Tsai, T.C. Wang, and G.C. Chi, IEEE Photonics Technology Letters, 15(10):1342-1344 (October 2003). [ Abstract ] · Innsbruck University (Austria):"Plasma diagnostic of ion and plasma PVD processes." G.N. Strauss and H.K. Pulker,Thin Solid Films, 442(1-2):66-73 (October 1 2003). [ Abstract ] · Institute of Rare Metals (Russia) / University of Florida / US Army Research Office:"Hydrogen plasma passivation effects on properties of p-GaN." A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, K.H. Baik, S.J. Pearton, B. Luo, F. Ren, and J.M. Zavada,Journal of Applied Physics, 94(6):3960-3965 (September 15 2003). [ Abstract ] · Japan Atomic Energy Research Institute (Japan):"Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth." W. Utsumi, H. Saitoh, H. Kaneko, T. Watanuki, K. Aoki, and O. Shimomura,Nature Materials, 2(11):735-738 (November 2003). [ Abstract ] · Kanagawa Academy of Science & Technology (Japan) / University of Tokyo (Japan):"Room-temperature epitaxial growth of GaN on conductive substrates." J. Ohta, H. Fujioka, and M. Oshima,Applied Physics Letters, 83(15):3060-3062 (October 13 2003). [ Abstract ] · Kwangju Institute of Science & Technology (South Korea) / US Air Force Institute of Technology / University of South Carolina: "Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD." J.H. Song, J.W. Lee, P.W. Yu, M.Y. Ryu, J. Zhang, E. Kuokstis, J.W. Yang, and M.A. Khan,Solid State Communications, 127(9-10):661-665 (September 2003). [ Abstract ] · Kyoto University (Japan) / Nichia Corp. (Japan):"Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy." A. Kaneta, T. Mutoh, Y. Kawakami, S. Fujita, G. Marutsuki, Y. Narukawa, and T. Mukai,Applied Physics Letters, 83(17):3462-3464 (October 27 2003). [ Abstract ] · Linkoping University (Sweden) / Aixtron AG (Germany):"In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques." T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar, and M. Heuken,Journal of Crystal Growth, 257(1-2):1-6 (September 2003). [ Abstract ] · Nagoya Institute of Technology (Japan) / NGK Insulators Ltd. (Japan):"Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE." M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, and O. Oda,IEICE Transactions on Electronics, E86c(10):2077-2081 (October 2003). [ Abstract ] · Nanyang Technological University (Singapore):"Porous AIN ceramic substrates by reaction sintering." F.Y.C. Boey and A.I.Y. Tok,Journal of Materials Processing Technology, 140(Si):413-419 (September 22 2003). [ Abstract ] · National Central University (Taiwan):"Plasma-assisted process for removing NO/NOx from gas streams with C2H4 as additive." H.M. Lee, M.B. Chang, and S.C. Yang,Journal of Environmental Engineering-ASCE, 129(9):800-810 (September 2003). [ Abstract ] · National Cheng Kung University (Taiwan):"Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor." K.W. Chang and J.J. Wu,Applied Physics A-Materials Science & Processing, 77(6):769-774 (November 2003). [ Abstract ] · National Cheng Kung University (Taiwan) / Chung Shan Institute of Science & Technology (Taiwan) / National Research Council (Canada):"Two-step epitaxial lateral overgrowth of GaN." C.H. Ko, Y.K. Su, S.J. Chang, T.Y. Tsai, T.M. Kuan, W.H. Lan, J.C. Lin, W.J. Lin, Y.T. Cherng, and J.B. Webb,Materials Chemistry and Physics, 82(1):55-60 (September 28 2003). [ Abstract] · National Cheng Kung University (Taiwan) / National Central University (Taiwan) / Epitaxy Corp. (Taiwan):"Nitride-based blue LEDs with GaN/SiN double buffer layers." C.H. Kuo, S.J. Chang, Y.K. Su, C.K. Wang, L.W. Wu, J.K. Sheu, T.C. Wen, W.C. Lai, J.M. Tsai, and C.C. Lin,Solid-State Electronics, 47(11):2019-2022 (November 2003). [ Abstract ] · National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / National Central University (Taiwan):"In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer." L.W. Wu, S.J. Chang, Y.K. Su, R.W. Chuang, Y.P. Hsu, C.H. Kuo, W.C. Lai, T.C. Wen, J.M. Tsai , and J.K. Sheu,Solid-State Electronics, 47(11):2027-2030 (November 2003). [ Abstract ] · National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / National Yunlin University of Science & Technology (Taiwan) / Kun Shan University of Technology (Taiwan):"High power nitride based light emitting diodes with Ni/ITO p-type contacts." Y.C. Lin, S.J. Chang, Y.K. Su, C.S. Chang, S.C. Shei, J.C. Ke, H.M. Lo, S.C. Chen, and C.W. Kuo,Solid-State Electronics, 47(9):1565-1568 (September 2003). [ Abstract ] · National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / South Taiwan University of Technology (Taiwan) / Chinese Academy of Sciences (China):"A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition." L.W. Ji, Y.K. Su, S.J. Chang, L.W. Wu, T.H. Fang, Q.K. Xue, W.C. Lai, and Y.Z. Chiou,Materials Letters, 57(26-27):4218-4221 (September 2003). [ Abstract ] · National Institute of Advanced Industrial Science and Technology (Japan):"Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy." K. Jeganathan, T. Ide, M. Shimizu, and H. Okumura,Journal of Applied Physics, 94(5):3260-3263 (September 1 2003). [ Abstract ] · National Renewable Energy Laboratory: "Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition." J.F. Geisz, R.C. Reedy, B.M. Keyes, and W.K. Metzger,Journal of Crystal Growth, 259(3):223-231 (December 2003). [ Abstract ] · National Taiwan Institute of Technology (Taiwan) / Institute of Nuclear Energy Research (Taiwan) / National Taipei University of Technology (Taiwan):"Improved surface characteristics of n-GaN epitaxial structures after reactive ion etching." H.H. Yee, H.F. Hong, and J.Y. Chang,Optical Engineering, 42(10):2918-2922 (October 2003). [ Abstract ] · National Taiwan Institute of Technology (Taiwan) / Natl Chiao Tung University (Taiwan) / National University of Kaohsiung (Taiwan) / Formosa Epitaxy Inc. (Taiwan):"GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer." L.C. Chen, C.Y. Hsu, W.H. Lan, and S.Y. Teng,Solid-State Electronics, 47(10):1843-1846 (October 2003). [ Abstract ] · Nippon Telegraph & Telephone Public Corp. (Japan) / University of Electrocommunications (Japan):"Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers." T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, and N. Kobayashi,Applied Physics Letters, 83(20):4140-4142 (November 17 2003). [ Abstract ] · North Carolina State University:"Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)." K.M. Tracy, W.J. Mecouch, R.F. Davis, and R.J. Nemanich,Journal of Applied Physics, 94(5):3163-3172 (September 1 2003). [ Abstract ] · Northwestern University: "Microscopic study of electrical transport through individual molecules with metallic contacts. I. Band lineup, voltage drop, and high-field transport." Y.Q. Xue and M.A. Ratner,Physical Review B, 68(11):115406 (September 15 2003). [ Abstract ] · Polish Academy of Sciences (Poland) / CNRS (France) / University of Magdeburg (Germany):"Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy." H.P.D. Schenk, P. Vennegues, O. Tottereau, T. Riemann, and J. Christen,Journal of Crystal Growth, 258(3-4):232-250 (November 2003). [ Abstract ] · Russian Academy of Sciences (Russia) / Moscow State University (Russia) / MV Lomonosov Moscow State University (Russia):"n-ZnO/p-GaN/alpha-Al2O3 heterojunction as a promising blue light emitting system." B.M. Ataev, Y.I. Alivov, V.A. Nikitenko, M.V. Chukichev, V.V. Mamedov, and S.S. Makhmudov,Journal of Optoelectronics and Advanced Materials, 5(4):899-902 (December 2003). [Abstract not available] · Saga University (Japan):"Low-temperature growth of aluminum nitride on sapphire substrates." Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio, and H. Ogawa,Journal of Crystal Growth, 257(1-2):123-128 (September 2003). [ Abstract ] · Seoul National University (South Korea) / Samsung Advanced Institute of Technology (South Korea) / Sung Kyun Kwan University (South Korea) / Chungbuk National University (South Korea) : "Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme." S.H. Park, J. Kim, H. Jeon, T. Sakong, S.N. Lee, S. Chae, Y. Park, C.H. Jeong, G.Y. Yeom, and Y.H. Cho,Applied Physics Letters, 83(11):2121-2123 (September 15 2003). [ Abstract ] · Sheffield Hallam University (UK):"Plasma-surface interaction at sharp edges and corners during ion-assisted physical vapor deposition. Part I: Edge-related effects and their influence on coating morphology and composition." E.B. Macak, W.D. Munz, and J.M. Rodenburg, Journal of Applied Physics, 94(5):2829-2836 (September 1 2003). [ Abstract ] · Sophia University (Japan) / National Central University (Taiwan):" Response to Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' [Appl. Phys. Lett. 83, 3626 (2003)]." A. Kikuchi, R. Bannai, K. Kishino, C.M. Lee, and J.I. Chyi,Applied Physics Letters, 83(17):3628-3628 (October 27 2003). [ Abstract ] · Technical University of Berlin (Germany) / Carnegie Mellon University / Technical University of Chemnitz (Germany):"Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry." C. Cobet, T. Schmidtling, M. Drago, N. Wollschlager, N. Esser, W. Richter, R.M. Feenstra, and T.U. Kampen,Journal of Applied Physics, 94(10):6997-6999 (November 15 2003). [ Abstract ] · Technical University of Warsaw (Poland) / Warsaw University of Technology (Poland):"Impulse plasma deposition of aluminum oxide layers for Al2O3/Si, SiC, GaN systems." A. Werbowy, K. Zdunek, E. Dusinski, J. Szmidt, and M. Elert,Surface & Coatings Technology, 174:170-175 (September 2003-October 31 2003). [ Abstract ] · Tohoku University (Japan) / Ricoh Company Ltd (Japan) / Cornell University:"Influence of 3D-transition-metal additives on single crystal growth of GaN by the Na flux method." M. Aoki , H. Yamane, M. Shimada, S. Sarayama, H. Iwata, and F.J. Disalvo,Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(9a):5445-5449 (September 2003). [ Abstract ] · Tokyo Institute of Technology (Japan) / Yokohama National University (Japan):"Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer." W. Nakao and H. Fukuyama,Journal of Crystal Growth, 259(3):302-308 (December 2003). [ Abstract ] · University of Bristol (UK) / Interface Analytical Centre (UK) / University of Bath (UK) / CNRS (France):"High-temperature annealing of AlGaN: Stress, structural, and compositional changes." S. Rajasingam, A. Sarua, M. Kuball, A. Cherodian, M.J. Miles, C.M. Younes, B. Yavich, W.N. Wang, and N. Grandjean,Journal of Applied Physics, 94(10):6366-6371 (November 15 2003). [ Abstract ] · University of California-Santa Barbara / Technical University of Darmstadt (Germany):"Synthesis of nanocrystalline aluminum-gallium nitride (A1(x)Ga(1-x)N; x=0.1 to 0.5) with oxide precursors via ammonolysis." S. Faulhaber, L. Loeffler, J. Hu, E. Kroke, R. Riedel, and F.F. Lange,Journal of Materials Research, 18(10):2350-2358 (October 2003). [ Abstract ] · University of Clermont Ferrand (France) / CNRS (France):"Observation of Rabi splitting in a bulk GaN microcavity grown on silicon." N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, and J. Massies,Physical Review B, 68(15):153313 (October 15 2003). [ Abstract ] · University of Exeter (UK) / University of Newcastle Upon the Tyne (UK):"Hydrogen molecules in 4H-SiC and 2H-GaN." T.A.G. Eberlein, L. Huggett, R. Jones, and P.R. Briddon,Journal of Physics-Condensed Matter, 15(39, Si):s2897-s2902 (October 8 2003). [ Abstract ] · University of Florida:"Indication of hysteresis in AlMnN." R. Frazier, G. Thaler, M. Overberg, B. Gila, C.R. Abernathy, and S.J. Pearton,Applied Physics Letters, 83(9):1758-1760 (September 1 2003). [ Abstract ] · University of Florida / Kansas State University / US Army Research Office:"Transition metal ion implantation into AlGaN ." R.M. Frazier, G.T. Thaler, C.R. Abernathy, S.J. Pearton, M.L. Nakarmi, K.B. Nam, J.Y. Lin, H.X. Jiang, J. Kelly, R. Rairigh, A.F. Hebard, J.M. Zavada, and R.G. Wilson,Journal of Applied Physics, 94(8):4956-4960 (October 15 2003). [ Abstract ] · University of Florida / Lehigh University / US Army Research Office:"Hydrogenation effects on magnetic properties of GaMnP." M.E. Overberg, K.H. Baik, G.T. Thaler, C.R. Abernathy, S.J. Pearton, J. Kelly, R. Rairigh, A.F. Hebard, W. Tang, M. Stavola, and J.M. Zavada, Electrochemical and Solid State Letters, 6(11):G131-G133 (November 2003). [ Abstract ] · University of Frankfurt (Germany):"Nitridation of V5Al8 films with NH3 by rapid thermal processing (RTP)." H. Lewalter and B.O. Kolbesen,Zeitschrift Fur Anorganische Und Allgemeine Chemie, 629(10):1760-1768 (September 2003). [ Abstract ] · University of Montpellier (France):"Indium nitride quantum dots grown by metalorganic vapor phase epitaxy." O. Briot, B. Maleyre, and S. Ruffenach,Applied Physics Letters, 83(14):2919-2921 (October 6 2003). [ Abstract ] · University of Nijmegen (Netherlands):"GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition." P.R. Hageman, J.J. Schermer, and P.K. Larsen,Thin Solid Films, 443(1-2):9-13 (October 22 2003). [ Abstract ] · University of Nottingham (UK) / University of Cambridge (UK):"Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 81, 1729 (2002)]." A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, and C.J. Humphreys,Applied Physics Letters, 83(17):3626-3627 (October 27 2003). [ Abstract ] · University of Queensland (Australia):"Al/AlN layered composites by direct nitridation of aluminum." B.J. Hall, G.B. Schaffer, Z. Ning, W.A.G. Mcphee, D.N. Miller, J. Drennan, and D.J. Cumming,Journal of Materials Science Letters, 22(22):1627-1630 (November 15 2003). [ Abstract ] · University of Science & Technology-Beijing (China):"Interface reactions in film materials." F.W. Zhu, Z.H. Zhai, and G.H. Yu,Journal of University of Science and Technology Beijing, 10(5):1-8 (October 2003). [Abstract not available] · University of Sheffield (UK):"Effect of anneal temperature on GaN nucleation layer transformation." M. Lada, A.G. Cullis, and P.J. Parbrook,Journal of Crystal Growth, 258(1-2):89-99 (October 2003). [ Abstract ] · University of Sheffield (UK):"Metastable rocksalt phase in epitaxial GaN on sapphire." M. Lada, A.G. Cullis, P.J. Parbrook, and M. Hopkinson,Applied Physics Letters, 83(14):2808-2810 (October 6 2003). [ Abstract ] · University of Sofia (Bulgaria) / Linkoping University (Sweden) / Aixtron AG (Germany):"Effect of carrier concentration on the microhardness of GaN layers." S. Evtimova, B. Arnaudov, T. Paskova, B. Monemar, and M. Heuken,Journal of Materials Science-Materials in Electronics, 14(10-12):771-772 (October 2003-December 31 2003). [ Abstract ] · University of South Carolina:"AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission." J.P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M.A. Khan,Applied Physics Letters, 83(17):3456-3458 (October 27 2003). [ Abstract ] · University of South Carolina:"GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices." W.H. Sun, J.W. Yang, C.Q. Chen, J.P. Zhang, M.E. Gaevski, E. Kuokstis, V. Adivarahan, H.M. Wang, Z. Gong, M. Su, and M.A. Khan,Applied Physics Letters, 83(13):2599-2601 (September 29 2003). [ Abstract ] · University of South Carolina:"Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells." C.Q. Chen, V. Adivarahan, J.W. Yang, M. Shatalov, E. Kuokstis, and M.A. Khan,Japanese Journal of Applied Physics Part 2-Letters, 42(9ab):L1039-L1040 (September 15 2003). [ Abstract ] · University of Technology-Sydney (Australia) / Macquarie University (Australia):"Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN." O. Gelhausen, H.N. Klein, M.R. Phillips, and E.M. Goldys,Applied Physics Letters, 83(16):3293-3295 (October 20 2003). [ Abstract ] · University of Tokyo (Japan) / Kanagawa Academy of Science & Technology (Japan) / Nippon Steel Corp. Ltd. (Japan):"Structural properties of GaN grown on LiGaO2 by PLD." H. Takahashi, H. Fujioka, J. Ohta, M. Oshima, and M. Kimura,Journal of Crystal Growth, 259(1-2):36-39 (November 2003). [ Abstract] · University of Wisconsin:"Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy." F. Dwikusuma, J. Mayer, and T.F. Kuech, Journal of Crystal Growth, 258(1-2):65-74 (October 2003). [ Abstract ] · University of Wisconsin:"X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism." F. Dwikusuma and T.F. Kuech,Journal of Applied Physics, 94(9):5656-5664 (November 1, 2003). [ Abstract ] B. Materials and Device Design Properties · Aristotle University of Thessaloniki (Greece) / University of Sussex (UK):"Raman study of Mg, Si, O, and N implanted GaN." M. Katsikini, K. Papagelis, E.C. Paloura, and S. Ves,Journal of Applied Physics, 94(7):4389-4394 (October 1 2003). [ Abstract ] · Boston University:"Complex ordering in ternary wurtzite nitride alloys." E. Iliopoulos, K.F. Ludwig, and T.D. Moustakas,Journal of Physics and Chemistry of Solids, 64(9-10):1525-1532 (September 2003-October 31 2003). [ Abstract ] · Chinese Academy of Sciences (China):"Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition." G.Q. Hu, X. Kong, L. Wan, Y.Q. Wang, X.F. Duan, Y. Lu, and X.L. Liu,Chinese Physics Letters, 20(10):1811-1814 (October 2003). [ Abstract ] · Chungbuk National University (South Korea) / Dongguk University (South Korea) / Samsung Advanced Institute of Technology (South Korea):"Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters." Y.H. Cho, S.K. Lee, H.S. Kwack, J.Y. Kim, K.S. Lim, H.M. Kim, T.W. Kang, S.N. Lee, M.S. Seon , O.H. Nam, and Y.J. Park,Applied Physics Letters, 83(13):2578-2580 (September 29 2003). [ Abstract ] · CNR (Italy):"Structural morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperature." C. Caliendo, P. Imperatori, and E. Cianci,Thin Solid Films, 441(1-2):32-37 (September 22 2003). [ Abstract ] · Cornell University:"Nonuniformities in GaN/AlN quantum wells." K.A. Mkhoyan, J. Silcox, H. Wu, W.J. Schaff, and L.F. Eastman,Applied Physics Letters, 83(13):2668-2670 (September 29 2003). [ Abstract ] · Fudan University (China) / Virginia Commonwealth University:"Local surface potential of GaN nanostructures probed by Kelvin force microscopy." X.X. Gu, D.M. Huang, and H. Morkoc,Chinese Physics Letters, 20(10):1822-1825 (October 2003). [ Abstract ] · Hubei University (China) / NIST / Cornell University:"Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer." C.J. Lu, L.A. Bendersky, H. Lu, and W.J. Schaff,Applied Physics Letters, 83(14):2817-2819 (October 6 2003). [ Abstract ] · Ismra University of Caen (France) / University of Sidi Bel Abbes (Algeria):"First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys." Z. Dridi, B. Bouhafs, and P. Ruterana,Semiconductor Science and Technology, 18(9):850-856 (September 2003). [ Abstract ] · Jeonbuk National University (South Korea):"Analysis of Mg-related emissions in p-GaN grown by MOCVD." T.S. Jeong, C.J. Youn, M.S. Han, J.W. Yang, and K.Y. Lim,Journal of Crystal Growth, 259(3):267-272 (December 2003). [ Abstract ] · Keio University (Japan):"Porous phosphor thin films of oxyfluoride SiO2-BaMgF4: Eu2+ glass-ceramics prepared by sol-gel method ." S. Fujihara, S. Kitta , and T. Kimura,Chemistry Letters, 32(10):928-929 (October 5 2003). [ Abstract ] · Korea Research Institue of Chemical Technology (South Korea) / Chungnam National University (South Korea):"Luminescence characteristics of green light emitting Ba2SiO4 : Eu2+ phosphor." M.A. Lim, J.K. Park, C.H. Kim, H.D. Park , and M.W. Han, Journal of Materials Science Letters, 22(19):1351-1353 (October 1 2003). [ Abstract ] · Korea Research Institute of Standards and Sciences (South Korea) / Chungnam National University (South Korea):"Determination of the Al mole fraction in epitaxial AlxGa1-xN/GaN (x < 0.25) heterostructures." S.I. Bahn, C.M. Lee, S.J. Lee, J.I. Lee, C.S. Kim, S.K. Noh, B.S. Oh, and K.J. Kim,Journal of the Korean Physical Society, 43(3):381-385 (September 2003). [ Abstract ] · Kyoto University (Japan) / Toyoda Gosei Company Ltd (Japan):"Effects of vacuum annealing on electrical properties of GaN contacts." I. Fujimoto, H. Asamizu, M. Shimada, M. Moriyama, N. Shibata, and M. Murakami,Journal of Electronic Materials, 32(9):957-963 (September 2003). [Scroll to Abstract ] · Kyoto Unversity (Japan) / Matsushita Electric Industrial Co. Ltd. (Japan):"Carrier recombination processes in GaN, AlGaN, and InGaN epilayers." M. Ichimiya, T. Hayashi, M. Watanabe, T. Ohata, and A. Ishibashi,Physica Status Solidi A-Applied Research, 199(2):347-354 (September 2003). [ Abstract ] · Nagoya Institute of Technology (Japan):"Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire." Y. Liu, T. Egawa, H. Ishikawa, and T. Jimbo,Journal of Crystal Growth, 259(3):245-251 (December 2003). [ Abstract ] · National Taiwan University (Taiwan) / Sung Kyun Kwan University (South Korea) / National Central University (Taiwan):"Transport in a gated Al0.18Ga0.82N/GaN electron system." J.R. Juang, T.Y. Huang, T.M. Chen, M.G. Lin, G.H. Kim, Y. Lee, C.T. Liang, D.R. Hang, Y.F. Chen, and J.I. Chyi,Journal of Applied Physics, 94(5):3181-3184 (September 1 2003). [ Abstract ] · NIST / TDI Inc. / University of California-Santa Barbara:"Refractive index study of AlxGa1-xN films grown on sapphire substrates." N.A. Sanford, L.H. Robins, A.V. Davydov, A. Shapiro, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, and S.P. Denbaars,Journal of Applied Physics, 94(5):2980-2991 (September 1 2003). [ Abstract ] · North Carolina State University / SUNY-Stony Brook:"Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers." E.A. Preble, P.Q. Miraglia, A.M. Roskowski, W.M. Vetter, M. Dudley, and R.F. Davis,Journal of Crystal Growth, 258(1-2):75-83 (October 2003). [ Abstract ] · Northwestern University: "Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes." A. Yasan, R. Mcclintock, K. Mayes, D.H. Kim, P. Kung, and M. Razeghi,Applied Physics Letters, 83(20):4083-4085 (November 17 2003). [ Abstract ] · Peking University (China) / State Key Laboratory for Artificial Microstructures & Mesoscopic Physics (China):"Dopant effects on defects in GaN films grown by metal-organic chemical vapour deposition." M. Lu, H. Yang, Z.L. Li, Z.J. Yang, Z.H. Li, Q. Ren, C.L. Jin, S. Lu, B. Zhang, and G.Y. Zhang,Chinese Physics Letters, 20(9):1552-1553 (September 2003) [ Abstract ] · Peking University (China) / Zhejiang University (China):"The role of Ni and Au on transparent film of blue LEDs." Z.X. Qin, Z.Z. Chen, H.X. Zhang, X.M. Ding, X.D. Hu, T.J. Yu, and G.Y. Zhang,Solid-State Electronics, 47(10):1741-1743 (October 2003). [ Abstract ] · Pohang University of Science & Technology (South Korea) / Purdue University:"Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN." H.W. Jang, T. Sands, and J.L. Lee,Journal of Applied Physics, 94(5):3529-3535 (September 1 2003). [ Abstract ] · Polish Academy of Sciences (Poland):"Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes." G. Franssen, E. Litwin-Staszewska, R. Piotrzkowski, T. Suski, and P. Perlin,Journal of Applied Physics, 94(9):6122-6128 (November 1 2003). [ Abstract ] · Polytechnic University-Madrid (Spain) / University of Autonoma-Madrid (Spain) / Paul Drude Institut fur Festkorperelekt (Germany):"Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy." J. Ristic, E. Calleja, M.A. Sanchez-Garcia, J.M. Ulloa, J. Sanchez-Paramo, J.M. Calleja, U. Jahn, A. Trampert, and K.H. Ploog,Physical Review B, 68(12):125305 (September 15 2003). [ Abstract ] · Rensselaer Polytechnic Institute / Boston University / Osram Opto Semiconductors (Germany): "Omnidirectional reflective contacts for light-emitting diodes." T. Gessmann, E.F. Schubert, J.W. Graff, K. Streubel, and C. Karnutsch,IEEE Electron Device Letters, 24(11):683-685 (November 2003). [ Abstract ] · Ruhr University of Bochum (Germany) / Technical University of Munich (Germany):"Theoretical investigation of the gas-phase decomposition of Ga(N-3)(2)Et as a model for a single-molecule GaN precursor." B. Wolbank and R. Schmid,Chemical Vapor Deposition, 9(5):272-278 (October 2003). [ Abstract ] · Russian Academy of Sciences (Russia) / US Air Force Research Laboratory / Wright State University / MV Lomonosov Moscow State University (Russia): "Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes." Y.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, and B.M. Ataev,Applied Physics Letters, 83(14):2943-2945 (October 6 2003). [ Abstract ] · Shanghai Jiao Tong University (China) / Saga University (Japan):"Temperature effects on optical properties of InN thin films." L.F. Jiang, W.Z. Shen, H.F. Yang, H. Ogawa, and Q.X. Guo,Applied Physics A-Materials Science & Processing, 78(1):89-93 (January 2004). [ Abstract ] · SUNY Buffalo / Cornell University:"Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures." M. Furis, A.N. Cartwright, H. Wu, and W.J. Schaff,Applied Physics Letters, 83(17):3486-3488 (October 27 2003). [ Abstract ] · Technical University of Berlin (Germany) / Otto Von Guericke University (Germany):"Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates." I.L. Krestnikov, M. Strassburg, A. Strittmatter, N.N. Ledentsov, J. Christen, A. Hoffmann, and D. Bimberg,Japanese Journal of Applied Physics Part 2-Letters, 42(9ab):L1057-L1060 (September 15 2003). [ Abstract ] · Technical University of Lodz (Poland) / University of New Mexico:" Nitride VCSEL design for continuous-wave operation of higher-order optical modes." P. Mackowiak, R.P. Sarzala, M. Wasiak, and W. Nakwaski,Applied Physics A-Materials Science & Processing, 77(6):761-768 (November 2003). [ Abstract ] · Technical University of Moldova (Moldova) / University of Michigan:"Optical characterization of AlN/GaN heterostructures." V.V. Ursaki, I.M. Tiginyanu, V.V. Zalamai, S.M. Hubbard, and D. Pavlidis,Journal of Applied Physics, 94(8):4813-4818 (October 15 2003). [ Abstract ] · University of Bordeaux (France):"Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy." L. Hirsch and A.S. Barriere,Journal of Applied Physics, 94(8):5014-5020 (October 15 2003). [ Abstract ] · University of California-Berkeley / Cornell University:"Temperature dependence of the fundamental band gap of InN." J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager, S.X. Li, E.E. Haller, H. Lu, and W.J. Schaff,Journal of Applied Physics, 94(7):4457-4460 (October 1 2003). [ Abstract ] · University of California-Berkeley / US Air Force Research Laboratory: "Inversion domains in AlN grown on (0001) sapphire." J. Jasinski, Z. Liliental-Weber, Q.S. Paduano, and D.W. Weyburne,Applied Physics Letters, 83(14):2811-2813 (October 6 2003). [ Abstract ] · University of California-Riverside: "Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots." V.A. Fonoberov and A.A. Balandin,Journal of Applied Physics, 94(11):7178-7186 (December 1 2003). [ Abstract ] · University of Cincinnati:"Enhanced blue emission from Tm-doped AlxGa1-xN electroluminescent thin films." D.S. Lee and A.J. Steckl,Applied Physics Letters, 83(11):2094-2096 (September 15 2003). [ Abstract ] · University of Estadual Campinas (Brazil) / University of Sao Paulo (Brazil) / University of Paderborn (Germany):"Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN ." J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, Brasil Mjsp, Soares Jant, A.M. Santos, O.C. Noriega, J.R. Leite, D.J. As, U. Kohler, S. Potthast, and D.G. Pacheco-Salazar,Physical Review B, 68(15):155204 (October 15 2003). [ Abstract ] · University of Florida / US Army Research Office:"Ferromagnetism in Mn- and Cr-implanted AlGaP." M.E. Overberg, G.T. Thaler, R.M. Frazier, R. Rairigh, J. Kelly, C.R. Abernathy, S.J. Pearton, A.F. Hebard, R.G. Wilson, and J.M. Zavada,Solid-State Electronics, 47(9):1549-1552 (September 2003). [ Abstract ] · University of Kansas / Kansas State University:"Birefringence of GaN/AlGaN optical waveguides." R. Hui, Y. Wan, J. Li, S.X. Jin, J.Y. Lin, and H.X. Jiang,Applied Physics Letters, 83(9):1698-1700 ( September 1 2003). [ Abstract ] · University of Poona (India) / National Chemical Laboratory (India):"Characterization of indium nitride films deposited by activated reactive evaporation process." S.J. Patil, D.S. Bodas, A.B. Mandale, and S.A. Gangal,Thin Solid Films, 444(1-2):52-57 (November 1 2003). [ Abstract ] · University of Tokyo (Japan) / Tottori University (Japan) / KAST (Japan) / National Institute of Advanced Science & Technology (Japan):"Experimental and theoretical investigation on the structural properties of GaN grown on sapphire." J. Ohta, H. Fujioka, M. Oshima, K. Fujiwara, and A. Ishii,Applied Physics Letters, 83(15):3075-3077 (October 13 2003). [ Abstract ] · University of Valencia (Spain) / University of Los Andes (Venezuela) / Technical University of Ilmenau (Germany):"Mid gap photoluminescence from GaN : Mn, a magnetic semiconductor." N.V. Joshi, H. Medina, A. Cantarero, and O. Ambacher,Journal of Physics and Chemistry of Solids, 64(9-10):1685-1689 (September 2003-October 31 2003). [ Abstract ] · University of Warsaw (Poland):"Light-induced narrowing of excitonic absorption lines in GaN." P. Trautman, K. Pakula, R. Bozek, and J.M. Baranowski,Applied Physics Letters, 83(17):3510-3512 (October 27 2003). [ Abstract ] · University of Western Australia / Tabriz University (Iran):"The behavior of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures with very thin AlxGa1-xN barriers." M. Kalafi and A. Asgari, Physica E-Low-Dimensional Systems & Nanostructures, 19(4):321-327 (September 2003). [ Abstract ] · US Air Force Research Laboratory / Wright State University / Oklahoma State University / Cree Inc.: "Emission and reflection spectra from AlxGa1-xN/GaN single heterostructures." D.C. Reynolds, J. Hoelscher, C.W. Litton, T.C. Collins, R. Fitch, G.D. Via, J. Gillespie, A. Crespo, T.J. Jenkins, and A. Saxler,Journal of Applied Physics, 94(7):4263-4266 (October 1 2003). [ Abstract ] · Virginia Commonwealth University / University of California-Berkeley / MIT / Samsung Advanced Institute of Technology (South Korea) / CNR (Italy):"Unusual luminescence lines in GaN." M.A. Reshchikov, D. Huang, F. Yun, P. Visconti , L. He, H. Morkoc, J. Jasinski, Z. Liliental-Weber, R.J. Molnar, S.S. Park, and K.Y. Lee,Journal of Applied Physics, 94(9):5623-5632 (November 1 2003). [ Abstract ] · Wright State University / US Air Force Research Laboratory:"On the nitrogen vacancy in GaN." D.C. Look, G.C. Farlow, P.J. Drevinsky, D.F. Bliss, and J.R. Sizelove,Applied Physics Letters, 83(17):3525-3527 (October 27 2003). [ Abstract ] · Yonsei University (South Korea) / Korea Institute of Science & Technology (South Korea):"Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE." K.S. Huh, M.C. Jeong, M.H. Ham, J.M. Myoung, W.Y. Lee, J.M. Lee, and S.H. Han,Solid State Communications, 128(4):119-123 (October 2003). [ Abstract ] C. Packaging and Reliability · National Cheng Kung University (Taiwan):"The microstructure investigation of flip-chip laser diode bonding on silicon substrate by using indium-gold solder." C.C. Liu, Y.K. Lin, M.P. Houng, and Y.H. Wang,IEEE Transactions on Components and Packaging Technologies, 26(3):635-641 (September 2003). [ Abstract ] · University of Padua (Italy) / INFM (Italy) / University of Bologna(Italy) / University of Parma (Italy) / GELcore LLC:"Reliability analysis of GaN-based LEDs for solid state illumination." G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich,IEICE Transactions on Electronics, E86c(10):2032-2038 (October 2003). [ Abstract ] · University of Padua (Italy) / University of Bari (Italy) / University of Cagliari (Italy) / GELcore LLC:"Reliability of visible GaN LEDs in plastic package." G. Meneghesso, S. Levada, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, and I. Eliashevich,Microelectronics Reliability, 43(9-11):1737-1742 (September 2003-November 30 2003). [ Abstract ] · US Army Research Laboratory / Laboratory for Physical Sciences:"High-yield flip-chip bonding and packaging of low-threshold VCSEL arrays on sapphire substrates." J.J. Liu, K.A. Olver, M. Taysing-Lara, T. Taylor, W. Chang, and S. Horst,IEEE Transactions on Components and Packaging Technologies, 26(3):548-553 (September 2003). [ Abstract ] D. Other LED Lighting · Cornell University / Princeton University:"Solid-state electroluminescent devices based on transition metal complexes." J. Slinker, D. Bernards, P.L. Houston, H.D. Abruna, S. Bernhard, and G.G. Malliaras,Chemical Communications, (19):2392-2399 (October 7 2003). [ Abstract ] · National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / National Central University (Taiwan):"High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact." C.S. Chang, S.J. Chang, Y.K. Su, C.H. Kuo, W.C. Lai, Y.C. Lin, Y.P. Hsu, S.C. Shei, J.M. Tsai, H.M. Lo, J.C. Ke, and J.K. Shen,IEEE Transactions on Electron Devices, 50(11):2208-2212 (November 2003). [Abstract not available] · Stanley Electric Co. Ltd. (Japan) / Tohoku University (Japan):"The role of surface chemistry in growth and material properties of ZnO epitaxial layers grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy." M. Sano, K. Miyamoto, H. Kato, and T.F. Yao,Japanese Journal of Applied Physics Part 2-Letters, 42(9ab):L1050-L1053 (September 15 2003). [ Abstract ] · University of Strathclyde (UK):"Fabrication of matrix-addressable InGaN-based microdisplays of high array density." C.W. Jeon, H.W. Choi, and M.D. Dawson,IEEE Photonics Technology Letters, 15(11):1516-1518 (November 2003). [ Abstract ] E. Review Articles · Palo Alto Research Center:"Electronic materials theory: Interfaces and defects." C.G. Van De Walle,Journal of Vacuum Science & Technology A , 21(5, Suppl.):s182-s190 (September 2003-October 31 2003). [ Abstract ] · Technical University of Munich (Germany):"Prospects for carrier-mediated ferromagnetism in GaN." T. Graf, S.T.B. Goennenwein, and M.S. Brandt,Physica Status Solidi B-Basic Research, 239(2):277-290 (October 2003).[ Abstract ] |
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