US 7,361,220 B2 | ||
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method | ||
Takatomo Sasaki, Suita (Japan); Yusuke Mori, Katano (Japan); Fumio Kawamura, Minoo (Japan); Masashi Yoshimura, Takarazuka (Japan); Yasunori Kai, Fukuoka (Japan); Mamoru Imade, Minoo (Japan); Yasuo Kitaoka, Ibaraki (Japan); Hisashi Minemoto, Hirakata (Japan); and Isao Kidoguchi, Kawanishi (Japan) | ||
Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan); and Takatomo Susaki, Osaka (Japan) | ||
Filed on Mar. 25, 2004, as Appl. No. 10/809,033. | ||
Claims priority of application No. 2003-086562 (JP), filed on Mar. 26, 2003. | ||
Prior Publication US 2004/0250747 A1, Dec. 16, 2004 | ||
Int. Cl. C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01) |
U.S. Cl. 117—84 [117/88; 117/89; 117/91; 117/105] | 48 Claims |
1. A method of manufacturing a GaN single crystal comprising:
growing a GaN single crystal by crystallizing an aeriform substance consisting essentially of GaHx.
|