Bibliographic Citation
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DOI | 10.1134/1.1309411 |
Title | Radiation defects in n-4H-SiC irradiated with 8-MeV protons |
Creator/Author | Lebedev, A.A. ; Veinger, A.I. ; Davydov, D.V. ; Savkina, N.S. ; Strel'chuk, A.M. [Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation)] ; Kozlovskii, V.V. [St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation)] |
Publication Date | 2000 Sep 01 |
OSTI Identifier | OSTI ID: 20477798 |
Other Number(s) | Journal ID: ISSN 1063-7826; SMICES; TRN: US03C2378051896 |
Resource Type | Journal Article |
Resource Relation | Journal: Semiconductors; Journal Volume: 34; Journal Issue: 9; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 1058-1062 (No. 9, 2000); DOI: 10.1134/1.1309411; (c) 2000 MAIK ''Nauka / Interperiodica''; Country of input: International Atomic Energy Agency (IAEA); TN: ; PBD: Sep 2000 |
Subject | 36 MATERIALS SCIENCE; ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; EXPERIMENTAL DATA; HYDROGEN COMPOUNDS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON CARBIDES; VAPOR PHASE EPITAXY |
Description/Abstract | Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested. |
Country of Publication | United States |
Language | English |
Format | Size: page(s) 1016-1020 |
System Entry Date | 2004 Jul 13 |
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