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DOI 10.1134/1.1309411
Title Radiation defects in n-4H-SiC irradiated with 8-MeV protons
Creator/Author Lebedev, A.A. ; Veinger, A.I. ; Davydov, D.V. ; Savkina, N.S. ; Strel'chuk, A.M. [Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation)] ; Kozlovskii, V.V. [St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation)]
Publication Date2000 Sep 01
OSTI IdentifierOSTI ID: 20477798
Other Number(s)Journal ID: ISSN 1063-7826; SMICES; TRN: US03C2378051896
Resource TypeJournal Article
Resource RelationJournal: Semiconductors; Journal Volume: 34; Journal Issue: 9; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 1058-1062 (No. 9, 2000); DOI: 10.1134/1.1309411; (c) 2000 MAIK ''Nauka / Interperiodica''; Country of input: International Atomic Energy Agency (IAEA); TN: ; PBD: Sep 2000
Subject36 MATERIALS SCIENCE; ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; EXPERIMENTAL DATA; HYDROGEN COMPOUNDS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON CARBIDES; VAPOR PHASE EPITAXY
Description/Abstract Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested.
Country of PublicationUnited States
LanguageEnglish
FormatSize: page(s) 1016-1020
System Entry Date2004 Jul 13

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