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Title Study of submicron periodic structures in GaAs-GaAlAs double heterostructures: fabrication and distributed-feedback injection lasers
Creator/Author Yang, J.L.
Publication Date1979 Jan 01
OSTI IdentifierOSTI ID: 5142572
Resource TypeThesis/Dissertation
Resource RelationThesis (Ph. D.)
Subject420300 -- Engineering-- Lasers-- (-1989); ;SEMICONDUCTOR LASERS-- FABRICATION;SEMICONDUCTOR LASERS-- MINIATURIZATION; ALUMINIUM ARSENIDES;EPITAXY;ETCHING;GALLIUM ARSENIDES;HETEROJUNCTIONS;INTEGRATED CIRCUITS;LASER MATERIALS;MASKING;OPTICAL PUMPING
Related SubjectALUMINIUM COMPOUNDS;ARSENIC COMPOUNDS;ARSENIDES;ELECTRONIC CIRCUITS;GALLIUM COMPOUNDS;JUNCTIONS;LASERS;MATERIALS;MICROELECTRONIC CIRCUITS;PNICTIDES;PUMPING;SEMICONDUCTOR DEVICES;SEMICONDUCTOR JUNCTIONS;SURFACE FINISHING
Description/Abstract This thesis work was carried out to study submicron-periodic structures on the top of or on one interface of (GaAlAs) heterostructures.^These structures were used for DFB injection lasers and optical-pumping experiments.^Both electron-resist gratings and photoresist gratings were used as masks for submicron periodic structures.^Electron-resist gratings were made by using scanning electron microscope (SEM).^We developed the procedure of fabricating submicron electron-resist gratings and determined the effect of parameters such as electron dosage, beam current and developing time upon the quality of the gratings.^Photo resist gratings were made holographically.^We studied the effect of Gaussian beam characteristic of source light and the standing-wave pattern introduced by the reflection from the substrate, and experimentally produced uniform submicron gratings suitable for DFB lasers.^After transferring submicron grating masks onto GaAs substrate by preferential chemical etching, ion-beam milling and radio-frequency sputter etching, GaAs and GaAlAs layers with different doping and composition were grown on the top by liquid phase epitaxy (LPE).^Considerable efforts were made to avoid non-uniform wetting and to prevent corrugation on the substrates from meltback during growth.^Using GaAs-GaAlAs double heterostructures (DH) with periodic corrugation between substrate and first epitaxial layer, we fabricated DFB injection lasers and tested them at different temperatures near 77/sup 0/K.^In conclusion, the major original contributions resulting from this thesis work are fabrication of scanning electron microscope (SEM) electron-resist submicron gratings, analysis of the non-uniformities of holographic photoresist gratings, liquid phase epitaxial (LPE) growth over corrugated GaAs substrates and investigation of optical-pumping of SEM-grating-masked corrugated GaAs structures.
PublisherCornell Univ.,Cornell, NY
Country of PublicationUnited States
LanguageEnglish
FormatPages: 134
AvailabilityUniversity Microfilms Order No. 80-04,009.
System Entry Date2001 May 13

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