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| Title: |
Proton damage to silicon as a function of proton energy
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| Author(s): |
Breckenridge, R. A.; Gross, C.
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| Abstract: |
Proton damage to n and p-type silicon crystals as function of proton energy using hall effect
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| NASA Center: |
Langley Research Center
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| Publication Date: |
JAN 1, 1967
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| Document Source: |
CASI |
| Online Source: |
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| Document ID: |
19680018167
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| Accession ID: |
68N27639
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| Publication Information: |
Number of Pages = 15 |
| Report Number: |
NASA-TM-X-60124
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| Price Code: |
A03 |
| Meeting Information: |
ANN. MEETING OF THE VA. ACAD. OF SCI., 45TH, 3-6 MAY 1967, NORFOLK, VA, United States |
| Keywords: |
HALL EFFECT; N-TYPE SEMICONDUCTORS; P-TYPE SEMICONDUCTORS; PROTON DAMAGE; SILICON; FORBIDDEN BANDS; PROTON ENERGY; PROTON SCATTERING;
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| Notes: |
PRESENTED AT THE 45TH ANN. MEETING OF THE VA. ACAD. OF SCI., NORFOLK, VA., 3-6 MAY 1967 |
| Accessibility: |
Unclassified; No Copyright; Unlimited; Publicly available; |
| Updated/Added to NTRS: |
2009-01-06 |
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