|
|
 |
 |
|
|
|
Selected Navigations:
Author >
[x]
|
Sort results by:
|
|
|
There are a total of 27 record(s) matching your query.
Sorted by: Date Added To NTRS in Descending order
|
Microwave and millimeter-wave power generation in silicon carbide avalanche devices
Author(s): Mehdi, I.; Haddad, G. I.; Mains, R. K.
Abstract: Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 ...
NASA Center: NASA (non Center Specific)
Publication Year: 1988
Added to NTRS: 2004-11-03
Accession Number: 88A47599; Document ID: 19880060372
Ensemble Monte Carlo characterization of graded Al(x)Ga(1-x)As heterojunction barriers
Author(s): Kamoua, R.; East, J. R.; Haddad, G. I.
Abstract: The current-voltage characteristics of graded Al(x)Ga(1-x)As heterojunction barriers were investigated using a self-consistent ensemble Monte Carlo method. Results are presented for barriers with two doping levels (10 to the ...
NASA Center: NASA (non Center Specific)
Publication Year: 1990
Added to NTRS: 2004-11-03
Accession Number: 90A43567; Document ID: 19900056512
Metal-oxide-metal, M-O-M, detector
Author(s): Haddad, G. I.; Kwok, S. P.; Lobov, G.
Abstract: Metal-oxide-metal tunnel diode properties, discussing parametric effects on small and large signals detector operation
NASA Center: NASA (non Center Specific)
Publication Year: 1971
Added to NTRS: 2004-11-03
Accession Number: 71A22684; Document ID: 19710041987
GaAs single-drift flat-profile IMPATT diodes for CW operation at D band
Author(s): Eisele, H.; Haddad, G. I.
Abstract: Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height ...
NASA Center: NASA (non Center Specific)
Publication Year: 1992
Added to NTRS: 2004-11-03
Accession Number: 93A25322; Document ID: 19930041325
Cavity perturbation techniques for measurement of the microwave conductivity and dielectric constant of a bulk semiconductor material.
Author(s): Eldumiati, I. I.; Haddad, G. I.
Abstract: Cavity perturbation techniques offer a very sensitive and highly versatile means for studying the complex microwave conductivity of a bulk material. A knowledge of the cavity coupling factor in the absence of perturbation, ...
NASA Center: NASA (non Center Specific)
Publication Year: 1972
Added to NTRS: 2004-11-03
Accession Number: 72A18371; Document ID: 19720034705
Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.
Author(s): Eldumiati, I. I.; Haddad, G. I.
Abstract: A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation ...
NASA Center: NASA (non Center Specific)
Publication Year: 1973
Added to NTRS: 2004-11-03
Accession Number: 73A18792; Document ID: 19730033990
Millimeter-wave detection using resonant tunnelling diodes
Author(s): Mehdi, I.; Kidner, C.; East, J. R.; Haddad, G. I.
Abstract: A lattice-matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter-wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and ...
NASA Center: NASA (non Center Specific)
Publication Year: 1990
Added to NTRS: 2004-11-03
Accession Number: 90A37862; Document ID: 19900050807
A microwave-biased millimeter- and submillimeter-wave detector using InSb.
Author(s): Eldumiati, I. I.; Haddad, G. I.
Abstract: Description of a high-purity n-type indium antimonide sample mounted in a reentrant cavity, cooled to 4.2 K, and operated as a millimeter-wave detector. The scheme utilizes a down-conversion process, and free-carrier ...
NASA Center: NASA (non Center Specific)
Publication Year: 1972
Added to NTRS: 2004-11-03
Accession Number: 72A18384; Document ID: 19720034718
Effects of tunneling on an IMPATT oscillator.
Author(s): Kwok, S. P.; Haddad, G. I.
Abstract: A phenomenological formulation that incorporates both the tunneling and avalanche mechanisms in an IMPATT diode is presented. The I-V characteristic of a diode where the two mechanisms are present is calculated. The ...
NASA Center: NASA (non Center Specific)
Publication Year: 1972
Added to NTRS: 2004-11-03
Accession Number: 72A41382; Document ID: 19720057716
Planar doped barrier devices for subharmonic mixers
Author(s): Lee, T. H.; East, J. R.; Haddad, G. I.
Abstract: An overview is given of planar doped barrier (PDB) devices for subharmonic mixer applications. A simplified description is given of PDB characteristics along with a more complete numerical analysis of the current versus ...
NASA Center: NASA (non Center Specific)
Publication Year: 1991
Added to NTRS: 2004-11-03
Accession Number: 91A26014; Document ID: 19910041391
|
|
|
|
|
