| US 7,476,908 B2 | ||
| Light emitting device | ||
| Shunpei Yamazaki, Setagaya (Japan); Hideto Ohnuma, Atsugi (Japan); Aya Anzai, Tsukui (Japan); Masayuki Sakakura, Ebina (Japan); and Hiromichi Godo, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on May 04, 2005, as Appl. No. 11/121,070. | ||
| Claims priority of application No. 2004-152522 (JP), filed on May 21, 2004. | ||
| Prior Publication US 2005/0258443 A1, Nov. 24, 2005 | ||
| Int. Cl. H01L 29/207 (2006.01); H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—93 [257/59; 257/72; 257/79; 257/88; 257/E33.001; 257/E33.055; 257/E33.067; 257/E33.068; 257/E33.07] | 34 Claims |
| 1. A light emitting device comprising:
a first insulating layer formed over a substrate;
a second insulating layer formed over the first insulating layer;
a semiconductor layer formed over the second insulating layer;
a gate insulating layer formed to cover the second insulating layer and the semiconductor layer;
a gate electrode formed over the gate insulating layer;
a first interlayer insulating layer formed to cover the gate insulating layer and the gate electrode;
an opening formed in the first interlayer insulating layer, the gate insulating layer and the second insulating layer;
a second interlayer insulating layer formed to cover the first insulating layer and the opening, the second interlayer insulating
layer having a self-planarizing property; and
a light emitting element formed over the opening,
wherein the opening is formed to correspond to a light path through which light generated in the light emitting element is
emitted to the outside of the light emitting device, and
wherein the light is emitted to the outside of the light emitting device through the first insulating layer and the second
interlayer insulating layer.
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