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There are a total of 19 record(s) matching your query.
Sorted by: Date Added To NTRS in Descending order
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Modeling of high efficiency solar cells under laser pulse for power beaming applications
Author(s): Jain, Raj K.; Landis, Geoffrey A.
Abstract: Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light ...
NASA Center: Glenn Research Center
Publication Year: 1994
Added to NTRS: 2008-06-02
Accession Number: 95N20516; Document ID: 19950014100
Surface passivation of InP solar cells with InAlAs layers
Author(s): Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.
Abstract: The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D ...
NASA Center: Glenn Research Center
Publication Year: 1993
Added to NTRS: 2008-06-01
Accession Number: 94N11389; Document ID: 19940006917
Approaches to solar cell design for pulsed laser power receivers
Author(s): Jain, Raj K.; Landis, Geoffrey A.
Abstract: Using a laser to beam power from Earth to a photovoltaic receiver in space could be a technology with applications to many space missions. Extremely high average-power lasers would be required in a wavelength range of ...
NASA Center: Glenn Research Center
Publication Year: 1993
Added to NTRS: 2008-06-01
Accession Number: 94N11397; Document ID: 19940006925
Determination of series resistance of indium phosphide solar cells
Author(s): Jain, Raj K.; Weinberg, Irving
Abstract: The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The ...
NASA Center: Glenn Research Center
Publication Year: 1991
Added to NTRS: 2008-05-31
Accession Number: 91N19207; Document ID: 19910009894
Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells
Author(s): Jain, Raj K.
Abstract: Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related ...
NASA Center: Glenn Research Center
Publication Year: 2005
Added to NTRS: 2005-09-02
Document ID: 20050206375
Effect of InAlAs window layer on efficiency of indium phosphide solar cells
Author(s): Jain, Raj K.; Landis, Geoffrey A.
Abstract: Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar ...
NASA Center: Glenn Research Center
Publication Year: 1992
Added to NTRS: 2005-08-25
Accession Number: 92N25176; Document ID: 19920015933; Report Number: E-6728, NAS 1.15:105354, NASA-TM-105354
Monolithic and mechanical multijunction space solar cells
Author(s): Jain, Raj K.; Flood, Dennis J.
Abstract: High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be ...
NASA Center: Glenn Research Center
Publication Year: 1992
Added to NTRS: 2005-08-25
Accession Number: 92N32233; Document ID: 19920022989; Report Number: E-7009-1, NAS 1.15:105832, NASA-TM-105832
Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells
Author(s): Jain, Raj K.; Landis, Geoffrey A.; Wilt, David M.; Flood, Dennis J.
Abstract: The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar ...
NASA Center: Glenn Research Center
Publication Year: 1993
Added to NTRS: 2005-08-25
Accession Number: 94N17113; Document ID: 19940012640; Report Number: E-7879, NAS 1.15:106255, NASA-TM-106255
High Efficiency Indium Gallium Arsenide Photovoltaic Devices for Thermophotovoltaic Power Systems
Author(s): Wilt, David M.; Fatemi, Navid S.; Hoffman, Richard W., Jr.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David; Lowe, Roland; Fauer, Maria; Jain, Raj K.
Abstract: The development of indium gallium arsenide (E(sub g)=0.75 eV) photovoltaic devices for thermophotovoltaic power generation is described. A device designed for broadband response had an air mass zero efficiency of 11.2 and ...
NASA Center: Glenn Research Center
Publication Year: 1994
Added to NTRS: 2005-08-25
Accession Number: 97N71640; Document ID: 19970017433; Report Number: NAS 1.15:1119978, NASA-TM-111997
Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells
Author(s): Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.
Abstract: Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light ...
NASA Center: Glenn Research Center
Publication Year: 1993
Added to NTRS: 2005-08-25
Accession Number: 93N27002; Document ID: 19930017813; Report Number: E-7792, NAS 1.15:106147, NASA-TM-106147
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