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Film Growth and Surface Structure II,
Lake-Bay Room (8:30 10:30)
8:30 9:10. 5.1. (Invited) Use of coherent x-ray diffraction
to image surface structure
I.K. Robinson, U. of Illinois
at Urbana-Champaign, USA (2728)
9:10 9:30. 5.2. X-ray scattering measurements of concentration
enhanced interdiffusion at Si/SiGe interfaces
D.B. Aubertine, N. Ozguven, A.F.
Marshall, P.C. McIntyre, Stanford University, USA (2564)
9:30 9:50. 5.3. Grazing incidence small angle X-ray scattering
for measuring particle/pore-size distributions in thin films
K. Omote, Y. Ito, K. Inaba, Rigaku
Corporation, Japan (2620)
9:50 10:10. 5.4. Vertical alignment of GaN quantum dots stacked
in multilayers: correlation length, depth resolved strains analysis and
elastic energy distribution
V. Chamard1,
T.H. Metzger2, V. Hol_3, M. Sztucki2,
M. Tolan1, E. Bellet-Amalric4, B. Daudin4,
C. Adelmann4, H. Mariette4, 1 Univ. Dortmund,
Germany, 2 ESRF, France, 3 Laboratory of Thin Films
and Nanostructures, Masaryk University, Czech Republic, 4 CEA-CNRS
joint group, France (2601)
10:10 10:30. 5.5. Determination of absolute indium content
in InGaN/GaN multiple quantum wells using anomalous x-ray scattering
D.Y. Noh1, H.H. Lee1,
K.S. Liang2, 1 K-JIST, South Korea, 2
SRRC, Taiwan (2611)
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