Session 5

7SXNS
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Film Growth and Surface Structure II,
Lake-Bay Room (8:30 — 10:30)

8:30 — 9:10. 5.1. (Invited) Use of coherent x-ray diffraction to image surface structure
I.K. Robinson, U. of Illinois at Urbana-Champaign, USA (2728)

9:10 — 9:30. 5.2. X-ray scattering measurements of concentration enhanced interdiffusion at Si/SiGe interfaces
D.B. Aubertine, N. Ozguven, A.F. Marshall, P.C. McIntyre, Stanford University, USA (2564)

9:30 — 9:50. 5.3. Grazing incidence small angle X-ray scattering for measuring particle/pore-size distributions in thin films
K. Omote, Y. Ito, K. Inaba, Rigaku Corporation, Japan (2620)

9:50 — 10:10. 5.4. Vertical alignment of GaN quantum dots stacked in multilayers: correlation length, depth resolved strains analysis and elastic energy distribution
V. Chamard1, T.H. Metzger2, V. Hol_3, M. Sztucki2, M. Tolan1, E. Bellet-Amalric4, B. Daudin4, C. Adelmann4, H. Mariette4, 1 Univ. Dortmund, Germany, 2 ESRF, France, 3 Laboratory of Thin Films and Nanostructures, Masaryk University, Czech Republic, 4 CEA-CNRS joint group, France (2601)

10:10 — 10:30. 5.5. Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering
D.Y. Noh1, H.H. Lee1, K.S. Liang2, 1 K-JIST, South Korea, 2 SRRC, Taiwan (2611)

 

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