Thin film and multilayer metrology and reference materials for microelectronics. Facilities for production and characterization of thin film stacks address the growing diversity of materials important for semiconductor manufacturing. Our main measurement technologies are based on advanced x-ray methods including grazing incidence x-ray reflectometry (GIXR), diffuse scattering, and large angle diffraction. Our sample production is based on a highly developed ion beam assisted high vacuum sputtering capability. |
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Characterization of Thin FilmsX-ray diffraction, specular x-ray reflectivity and non-specular x-ray scattering are three techniques that provide information about a thin film.X-ray diffraction investigates the lattice mismatch between crystalline film layers. However, only thick films (on the order of the extinction depth for a Bragg reflection) yield good diffraction patterns. Specular reflectivity, also known as grazing incidence x-ray reflectivity (GIXR), is useful for films in the range of 10 Å to 10 000 Å in thickness. It provides accurate measurement of thin film thickness, density and the interface width between layers. Non-specular scattering measurements yield information about layer interface, and can distinguish the difference between surface roughness and layer interdiffusion. |
Figure 1. A schematic drawing of the thin film diffractometer used at
NIST (larger view 146 k). |
The apparatus used for GIXR measurements is shown schematically in
Fig. 1. A highly collimated monochromatic
beam is formed using appropriate crystal optics. The beam is reflected off of a
sample aligned in the grazing incidence configuration, and captured by a
detector. An analyzer crystal placed in front of the detector decreases scatter
and enhances resolution.
There is a constant 1:2 ratio between the sample angle, theta, and detector angle relative to the incident beam in a reflectivity measurement. For incidence angles below the critical angle for reflection, total external reflection occurs and the reflectivity is approximately 1. For angles of incidence above the critical angle, the reflectivity falls off as -4 and the signal usually disappears within a few degrees. |
Non-specular scans can be taken to determine the smoothness of a thin film interface. The initial sample alignment is the same as is described for GIXR measurements. In this type of scan, typically the detector is held at a fixed position and the sample is rocked. Only a rough surface will produce diffuse scatter from an interface, thus a distinction between interdiffusion and roughness can be made. |
Thin Film RelectometryHow does x-ray reflectometry work? What does it see?Figure 1 shows the geometry a simple reflectometer. Competent reflectivity measurements require an incident x-ray beam having both a narrow spatial extent (in the plane of the figure) and a small angular divergence, typically of the order of 0.01° or less. This input beam is scanned in angle with respect to the sample surface over a range of grazing angles from zero through about 6°. Reflected radiation is detected by the counter shown through a pair of slits with a small spatial extent (in the plane of the figure. The reflectivity, R, is the ratio of reflected to incident intensities. For our purposes, a reflectivity profile is obtained at fixed incident x-ray wavelength as a function of the (grazing) angle of incidence. |
Figure 2. Diagram of an elementary x-ray reflectometer. |
Some experimental details of higher performance reflectometersAlthough there are several commercial systems available for x-ray reflectometry, our instruments were mainly assembled from components at hand, or built for this application. The flexibility offered by this approach has allowed consideration of a variety of x-ray optical arrangements. The main design challenge arises from the large dynamic range of reflectivity encountered in the analysis of thin films. This reflectivity range leads to a correspondingly large range of x-ray counting rates. Since most of the important structural information is found in the region of low reflectivity, the x-ray source and beam forming optics need to aim for high incident flux on the sample reflectivity, the x-ray source and beam forming optics need to aim for high incident flux on the sample. At the same time, the rapid falloff of reflectivity with angle
The collimation requirements can be effectively met by carefully designed
slit arrangements if the angular resolution requirements are modest. For our
purposes, in order to achieve the angular resolution needed to map relatively
thick stacks |
Figure 3. Comparison of several beam-conditioning optical arrangements offering improvements over simple slit collimators. |
Figure 4. Effectiveness of counting rate linearization using a single dead time model. |
High x-ray flux levels can be obtained either by combining the optical design exercises described above with a stationary anode x-ray tube, or a more powerful (and costly) rotating anode source. In either case, data rates in the region of high reflectivity rapidly exceed the counting rate capability of the usual NaI scintillation detectors and the capabilities of even the newer high speed counters that use YAP crystals. For the present, we have chosen to reduce the x-ray tube power and operate within the rate capacity of the available detector using a single dead-time correction function as indicated in Fig. 3. A simple upgrade providing automatic insertion of x-ray attenuators will allow full utilization of the available dynamic range of 108. |
X-ray measurement options
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Inquiries or comments: larry.hudson@nist.gov Online: September 2000 - |