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DOI http://dx.doi.org/10.1063/1.123129
Title Self- and interdiffusion in Al{sub X}Ga{sub 1{minus}X}As/GaAs isotope heterostructures
Creator/Author Bracht, H. ; Haller, E.E. [Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720 (United States)] ; Eberl, K. ; Cardona, M. [Max-Planck-Institut fuer Festkoerperforschung, 70569 Stuttgart (Germany)]
Publication Date1999 Jan 01
OSTI IdentifierOSTI ID: 292233
Other Number(s)APPLAB; ISSN 0003-6951
Resource TypeJournal Article
Resource RelationApplied Physics Letters ; VOL. 74 ; ISSUE: 1 ; PBD: Jan 1999
Subject36 MATERIALS SCIENCE ; ALUMINIUM COMPOUNDS; SELF-DIFFUSION; ISOTOPE EFFECTS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; HETEROJUNCTIONS; MASS SPECTRA; TEMPERATURE DEPENDENCE; ENTHALPY; ISOTOPES
Description/Abstract We report self- and interdiffusion studies between 800 and 1160{degree}C in buried Al{sup 71}GaAs/Al{sup 69}GaAs/{sup 71}GaAs and AlAs/{sup 71}GaAs isotope heterostructures. Ga diffusion at Al{sup 71}GaAs{endash}Al{sup 69}GaAs interfaces was found to decrease with increasing Al content. Al{endash}Ga interdiffusion at AlGaAs{endash}GaAs and AlAs{endash}GaAs interfaces reveals a concentration dependent interdiffusion coefficient. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6{plus_minus}0.1 eV, but with different pre-exponential factors. The experimentally observed higher Al diffusion in GaAs compared to Ga self-diffusion as well as the decreasing Ga diffusion with increasing Al content is explained.{copyright}{ital 1999 American Institute of Physics.}
Country of PublicationUnited States
LanguageEnglish
Formatpp. 49-51 ; PL:
System Entry Date2001 May 04

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